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    Prototyping station for atomic force microscope-assisted deposition of nanostructures
    1.
    发明授权
    Prototyping station for atomic force microscope-assisted deposition of nanostructures 失效
    原子力显微镜辅助沉积纳米结构原型台

    公开(公告)号：US08296859B2

    公开(公告)日：2012-10-23

    申请号：US12383467

    申请日：2009-03-23

    申请人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    发明人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    IPC分类号： G01N13/10

    CPC分类号： C23C16/047 ,  G01Q30/02

    摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

    摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。

    Prototyping station for atomic force microscope-assisted deposition of nanostructures
    2.
    发明申请
    Prototyping station for atomic force microscope-assisted deposition of nanostructures 失效
    原子力显微镜辅助沉积纳米结构原型台

    公开(公告)号：US20090241232A1

    公开(公告)日：2009-09-24

    申请号：US12383467

    申请日：2009-03-23

    申请人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    发明人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrei Iancu ,  Wonyoung Lee

    IPC分类号： G12B21/04 ,  G12B21/08

    CPC分类号： C23C16/047 ,  G01Q30/02

    摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

    摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。

    Field-aided preferential deposition of precursors
    3.
    发明授权
    Field-aided preferential deposition of precursors 失效
    现场辅助优先沉积前体

    公开(公告)号：US08496999B2

    公开(公告)日：2013-07-30

    申请号：US12383588

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    IPC分类号： C23C16/02

    CPC分类号： C23C16/047 ,  C23C16/45536 ,  C23C16/45544 ,  G01Q30/02 ,  G01Q80/00

    摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.

    摘要翻译： 通过包括以下步骤的方法提供区域选择性原子层沉积。 首先，提供基板。 其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。 然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。 提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。

    Prototyping Station for Atomic Force Microscope-Assisted Deposition of Nanostructures
    5.
    发明申请
    Prototyping Station for Atomic Force Microscope-Assisted Deposition of Nanostructures 有权
    原子力显微镜辅助沉积纳米结构原型站

    公开(公告)号：US20120284882A1

    公开(公告)日：2012-11-08

    申请号：US13548845

    申请日：2012-07-13

    申请人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrel Iancu ,  Wonyoung Lee

    发明人： James F. Mack ,  Neil Dasgupta ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Andrel Iancu ,  Wonyoung Lee

    IPC分类号： G01Q60/10 ,  G01Q60/24 ,  G01Q60/00

    CPC分类号： C23C16/047 ,  G01Q30/02

    摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

    摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。

    Field-aided preferential deposition of precursors
    6.
    发明申请
    Field-aided preferential deposition of precursors 失效
    现场辅助优先沉积前体

    公开(公告)号：US20090258157A1

    公开(公告)日：2009-10-15

    申请号：US12383588

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    IPC分类号： B05D3/14

    CPC分类号： C23C16/047 ,  C23C16/45536 ,  C23C16/45544 ,  G01Q30/02 ,  G01Q80/00

    摘要： Lateral nano-scale pattern control for atomic layer deposition can be provided by using a scanning tunneling microscope (SPM) tip to locally influence chemical reaction rates. An electric field and/or charge transfer can significantly reduce the potential energy barrier that affects reaction kinetics, and thereby significantly enhance reaction rates. By operating the ALD growth system in a regime where reaction rates without an electric field and/or charge transfer are negligible, deposition can be precisely controlled to occur only at locations defined by the SPM tip. Alternatively, the SPM tip can be used to locally inhibit ALD growth.

    摘要翻译： 可以通过使用扫描隧道显微镜（SPM）尖端来局部影响化学反应速率来提供用于原子层沉积的横向纳米尺度图案控制。 电场和/或电荷转移可以显着降低影响反应动力学的势垒，从而显着提高反应速率。 通过在没有电场和/或电荷转移的反应速率可忽略的情况下操作ALD生长系统，可以精确地控制沉积仅在由SPM尖端限定的位置处发生。 或者，SPM尖端可用于局部抑制ALD生长。

    Quantum dot solar cell with quantum dot bandgap gradients
    10.
    发明申请
    Quantum dot solar cell with quantum dot bandgap gradients 有权
    量子点带隙量子点太阳能电池

    公开(公告)号：US20090255580A1

    公开(公告)日：2009-10-15

    申请号：US12383584

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  James F. Mack

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0384

    摘要： Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.

    摘要翻译： 提供了带有量子点的高效光伏器件。 量子点具有许多可用于太阳能电池的理想特性，包括容易选择的带隙和费米能级。 特别地，量子点的尺寸和组成可以确定其带隙和费米能级。 通过在太阳能电池的有源层中精确沉积量子点，可以存在带隙梯度以有效的阳光吸收，激子解离和电荷传输。 不匹配费米等级也存在于相邻量子点之间，允许内置的电场形成并有助于电荷传输和预防激子重组。