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公开(公告)号：US06270395B1
公开(公告)日：2001-08-07
申请号：US09160514
申请日：1998-09-24
IPC分类号： B24G100
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , Y10S977/775 , Y10S977/776 , Y10S977/888
摘要： An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
摘要翻译： 用于去除低介电常数材料的氧化浆料。 使用具有单独氧化剂的非氧化性颗粒，单独氧化颗粒或用可相容的氧化剂可还原的磨料颗粒形成浆料。 颗粒可以由金属氧化物，氮化物或碳化物材料本身或其混合物形成，或者可以涂覆在诸如二氧化硅的芯材料上，或者可以与其共形。 优选的氧化浆料是粒径分布的多模态。 虽然开发用于CMP半导体处理中的本发明的氧化浆料也可用于其它高精度抛光工艺。
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2.发明授权
公开(公告)号：US6153525A
公开(公告)日：2000-11-28
申请号：US023415
申请日：1998-02-13
IPC分类号： H01L21/304 , H01L21/3105 , H01L21/312
CPC分类号： H01L21/31053 , H01L2924/00013
摘要： A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films. A cured, globally planarized, polymeric dielectric thin film is produced on a semiconductor substrate by (a) depositing a polymeric, dielectric film composition onto a surface of a semiconductor substrate; (b) partially curing the deposited film; (c) performing a chemical mechanical polishing step to said partially cured dielectric film, until said dielectric film is substantially planarized; and (d) subjecting the polished film to an additional curing step. Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate. A thermal treatment partially cures the polymer. A chemical mechanical polishing step achieves global planarization. Another thermal treatment accomplishes a final cure of the polymer. In this way, the chemical mechanical polishing removal rate is increased compared to the removal rate for a fully cured polymer film.
摘要翻译： 用于在半导体衬底上形成和平坦化聚合物介电膜并在平坦化这些膜时实现高化学机械抛光去除速率的方法。 通过（a）将聚合物电介质膜组合物沉积到半导体衬底的表面上，在半导体衬底上产生固化的全局平面化的聚合物电介质薄膜; （b）部分固化沉积膜; （c）对所述部分固化的电介质膜进行化学机械抛光步骤，直到所述电介质膜基本平坦化; 和（d）对经抛光的膜进行另外的固化步骤。 优选的电介质膜是通过旋涂法沉积到半导体衬底上的聚亚芳基醚和/或氟化聚亚芳基醚聚合物。 热处理部分固化聚合物。 化学机械抛光步骤实现全局平坦化。 另一种热处理完成聚合物的最终固化。 以这种方式，与完全固化的聚合物膜的去除速率相比，化学机械抛光去除速率增加。
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公开(公告)号：US6152148A
公开(公告)日：2000-11-28
申请号：US145921
申请日：1998-09-03
申请人： Anna M. George , Daniel L. Towery
发明人： Anna M. George , Daniel L. Towery
IPC分类号： C11D1/00 , C11D7/32 , C11D11/00 , H01L21/306 , H01L21/3105 , C23G1/14
CPC分类号： H01L21/02052 , C11D1/004 , C11D11/0047 , C11D7/3209 , H01L21/31053 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer having an organic dielectric film thereon by removing residual slurry particles adhered to the wafer surface after chemical-mechanical planarization is provided. The semiconductor is subjected to a post CMP cleaning step by applying mechanical frictional force to the surface of the wafer while concurrently applying to the wafer surface and aqueous solution having a pH of greater than 10 for a period of time sufficient to wet and clean the wafer surface, the basic aqueous solution comprised of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound such as tetramethylammonium hydroxide.
摘要翻译： 提供了一种通过在化学机械平面化之后除去粘附到晶片表面的残留浆料颗粒来清洁其上具有有机电介质膜的半导体晶片的表面的方法。 通过在晶片表面施加机械摩擦力，同时将晶片表面和pH大于10的水溶液施加足以润湿和清洁晶片的时间，对半导体进行后CMP清洗步骤 表面，由表面活性剂和四烷基季铵氢氧化物化合物如氢氧化四甲基铵组成的碱性水溶液。
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4.发明授权公开(公告)号：US06630433B2
公开(公告)日：2003-10-07
申请号：US09745266
申请日：2000-12-20
IPC分类号： C11D708
CPC分类号： C09G1/02 , C23F1/18 , C23F3/04 , C23F3/06 , H01L21/32115 , H01L21/3212 , H01L21/32134
摘要： Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
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