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    PEROVSKITE SOLAR CELL AND METHOD OF MAKING THE SAME
    1.
    发明申请
    PEROVSKITE SOLAR CELL AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20230087893A1

    公开(公告)日：2023-03-23

    申请号：US17904578

    申请日：2021-02-22

    申请人： NewSouth Innovations Pty Limited

    发明人： Xiaojing Hao ,  Xu Liu ,  Martin Andrew Green ,  Ziheng Liu

    IPC分类号： H01L31/00

    摘要： A method of forming a photovoltaic device comprising a perovskite photovoltaic cell, particularly a method of forming a perovskite solar cell (PSC), is disclosed having a hole transport layer comprising an additive that may result in one or more of reduced formation of crystalline domains in the hole transport layer; reduced size of pinholes in the hole transport layer; improved dopant homogeneity and increased hydrophobicity of the hole transport layer. Also disclosed are PSCs so formed, showing one or more improved properties.

    Adamantine Semiconductor and Uses Thereof
    2.
    发明申请
    Adamantine Semiconductor and Uses Thereof 有权

    公开(公告)号：US20210135028A1

    公开(公告)日：2021-05-06

    申请号：US16959654

    申请日：2019-02-15

    申请人： NewSouth Innovations Pty Limited

    发明人： Xiaojing Hao ,  Robert John Patterson ,  Shiyou Chen ,  Martin Andrew Green

    IPC分类号： H01L31/032 ,  H01L31/0749 ,  H01L31/18

    摘要： Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, Ī or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, Ī or 0 includes an element not formally being from group VIII, VII, VI,V, IV, III,II, Ī or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.

    Copper-based chalcogenide photovoltaic device and a method of forming the same
    6.
    发明授权
    Copper-based chalcogenide photovoltaic device and a method of forming the same 有权

    公开(公告)号：US11322634B2

    公开(公告)日：2022-05-03

    申请号：US16311845

    申请日：2017-06-21

    申请人： NEWSOUTH INNOVATIONS PTY LIMITED

    发明人： Xiaojing Hao ,  Fangyang Liu ,  Jialiang Huang ,  Chang Yan ,  Kaiwen Sun ,  Martin Andrew Green

    IPC分类号： H01L31/0749 ,  H01L31/032 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/18 ,  H01L21/02

    摘要： A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.

    Method of forming a germanium layer on a silicon substrate
    7.
    发明授权
    Method of forming a germanium layer on a silicon substrate 有权
    在硅衬底上形成锗层的方法

    公开(公告)号：US09508889B2

    公开(公告)日：2016-11-29

    申请号：US13916823

    申请日：2013-06-13

    申请人： NEWSOUTH INNOVATIONS PTY LIMITED

    发明人： Martin Green ,  Xiaojing Hao ,  Chao-Yang Tsao

    IPC分类号： H01L31/028 ,  H01L31/18 ,  C23C14/06 ,  C30B23/02 ,  C30B29/08 ,  H01L21/02 ,  H01L31/0725 ,  H01L31/0735

    CPC分类号： H01L31/1816 ,  C23C14/06 ,  C30B23/02 ,  C30B23/025 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/028 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1852 ,  Y02E10/544

    摘要： A method is presented for forming a Ge containing layer on a Si substrate. The method includes providing a crystalline Si substrate having a surface that has a crystallographic orientation, heating the Si substrate in a vacuum environment, exposing the Si substrate to a surfactant that is suitable for growth of the Ge containing layer on the crystalline Si using surfactant mediation, and thereafter growing the Ge containing layer on the surface of the heated Si substrate using a suitable sputtering technique. The conditions of the growth of the Ge containing layer are selected such that a thin Ge containing layer is formed on the surface of the Si substrate. The thin Ge containing layer has a surface that has crystallographic properties suitable for epitaxial growth of a layer of a further material on the surface of the thin Ge containing layer.

    摘要翻译： 提出了在Si衬底上形成含Ge层的方法。 该方法包括提供具有晶体取向的表面的晶体Si衬底，在真空环境中加热Si衬底，使用表面活性剂介质将Si衬底暴露于适合于在结晶Si上生长Ge的表面活性剂 ，然后使用合适的溅射技术在加热的Si衬底的表面上生长Ge含量层。 选择Ge含量层的生长条件使得在Si衬底的表面上形成含有薄的Ge含量层。 薄的Ge含有层具有适于在薄Ge含量层的表面上进一步材料层的外延生长的晶体学性质的表面。