ELECTROCHEMICAL CELL HAVING LOW VOLUME COLLECTOR ASSEMBLY
    1.
    发明申请
    ELECTROCHEMICAL CELL HAVING LOW VOLUME COLLECTOR ASSEMBLY 失效
    具有低体积收集器组件的电化学细胞

    公开(公告)号:US20080241678A1

    公开(公告)日:2008-10-02

    申请号:US11691801

    申请日:2007-03-27

    IPC分类号: H01M2/08

    摘要: A low volume collector assembly and an electrochemical cell employing a collector assembly are provided. The electrochemical cell includes an electrically conductive can having inner and outer electrodes disposed therein. The cell also includes a collector assembly assembled to an open end of the can to provide closure to the open end of the can. The collector assembly includes a seal and a cover assembled to the seal to provide a sealed closure to the open end of the can. The cover includes an integrally formed current collector portion that contacts one end of the inner electrode. The cover serves as a current collector and also serves as a contact terminal of the cell.

    摘要翻译: 提供了一种低体积收集器组件和采用集电器组件的电化学电池。 电化学电池包括其中设置有内电极和外电极的导电罐。 电池还包括组装到罐的开口端的收集器组件,以向罐的开口端提供封闭。 收集器组件包括密封件和组装到密封件上的盖,以向罐的开口端提供密封的封闭件。 该盖包括与内部电极的一端接触的整体形成的集电器部分。 盖用作集电器,并且还用作电池的接触端子。

    Electrochemical cell having low volume collector assembly
    2.
    发明授权
    Electrochemical cell having low volume collector assembly 失效
    电化学电池具有体积小的集电器组件

    公开(公告)号:US08236444B2

    公开(公告)日:2012-08-07

    申请号:US11691801

    申请日:2007-03-27

    IPC分类号: H01M2/08

    摘要: A low volume collector assembly and an electrochemical cell employing a collector assembly are provided. The electrochemical cell includes an electrically conductive can having inner and outer electrodes disposed therein. The cell also includes a collector assembly assembled to an open end of the can to provide closure to the open end of the can. The collector assembly includes a seal and a cover assembled to the seal to provide a sealed closure to the open end of the can. The cover includes an integrally formed current collector portion that contacts one end of the inner electrode. The cover serves as a current collector and also serves as a contact terminal of the cell.

    摘要翻译: 提供了一种低体积收集器组件和采用集电器组件的电化学电池。 电化学电池包括其中设置有内电极和外电极的导电罐。 电池还包括组装到罐的开口端的收集器组件,以向罐的开口端提供闭合。 收集器组件包括密封件和组装到密封件上的盖,以向罐的开口端提供密封的封闭件。 该盖包括与内部电极的一端接触的整体形成的集电器部分。 盖用作集电器,并且还用作电池的接触端子。

    Electrochemical cell
    3.
    发明授权
    Electrochemical cell 有权
    电化学电池

    公开(公告)号:US07556888B2

    公开(公告)日:2009-07-07

    申请号:US10778457

    申请日:2004-02-13

    IPC分类号: H01M4/42

    摘要: A cylindrical alkaline electrochemical cell is disclosed that includes a gel free anode. The anode includes a free flowing zinc powder with a preassembly tap density between 1.6 g/cc and 2.9 g/cc. In one embodiment, zinc powder with the desired tap density may be obtained by mixing zinc agglomerates with zinc flakes.

    摘要翻译: 公开了一种包括无凝胶阳极的圆柱形碱性电化学电池。 阳极包括自由流动的锌粉,其预组装振实密度在1.6g / cc至2.9g / cc之间。 在一个实施方案中,可以通过将锌附聚物与锌薄片混合来获得具有所需振实密度的锌粉末。

    Tunneling field effect transistor and method for fabricating the same
    4.
    发明授权
    Tunneling field effect transistor and method for fabricating the same 有权
    隧道场效应晶体管及其制造方法

    公开(公告)号:US09059268B2

    公开(公告)日:2015-06-16

    申请号:US13641116

    申请日:2012-08-21

    摘要: A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate; a channel region formed in the semiconductor substrate, with one or more isolation structures formed in the channel region; a first buried layer and a second buried layer formed in the semiconductor substrate and located at both sides of the channel region respectively, the first buried layer being first type non-heavily-doped, and the second buried layer being second type non-heavily-doped; a source region and a drain region formed in the semiconductor substrate and located on the first buried layer and the second buried layer respectively; and a gate dielectric layer formed on the one or more isolation structures, and a gate formed on the gate dielectric layer.

    摘要翻译: 提供隧道场效应晶体管及其制造方法。 隧道场效应晶体管包括:半导体衬底; 形成在所述半导体衬底中的沟道区,其中形成在所述沟道区中的一个或多个隔离结构; 第一掩埋层和第二掩埋层,形成在所述半导体衬底中并且分别位于所述沟道区的两侧,所述第一掩埋层是第一类型非重掺杂的,所述第二掩埋层是第二类型非重掺杂的, 掺杂; 源极区域和漏极区域,形成在所述半导体衬底中,分别位于所述第一掩埋层和所述第二掩埋层上; 以及形成在所述一个或多个隔离结构上的栅极电介质层,以及形成在所述栅极介电层上的栅极。

    Tunneling field effect transistor structure and method for forming the same
    5.
    发明授权
    Tunneling field effect transistor structure and method for forming the same 有权
    隧道场效应晶体管结构及其形成方法

    公开(公告)号:US08853674B2

    公开(公告)日:2014-10-07

    申请号:US13640929

    申请日:2012-08-28

    CPC分类号: H01L29/78603 H01L29/7391

    摘要: A tunneling field effect transistor structure and a method for forming the same are provided. The tunneling field effect transistor structure comprises: a substrate; a plurality of convex structures formed on the substrate, every two adjacent convex structures being separated by a predetermined cavity less than 30 nm in width, the convex structures comprising a plurality of sets, and each set comprising more than two convex structures; a plurality of floated films formed on tops of the convex structures, each floated film corresponding to one set of convex structures, a region of each floated film corresponding to a top of an intermediate convex structure in each set being formed as a channel region, and regions of the each floated film at both sides of the channel region are formed as a source region and a drain region with opposite conductivity types respectively; and a gate stack formed on each channel region.

    摘要翻译: 提供隧道场效应晶体管结构及其形成方法。 隧道场效应晶体管结构包括:衬底; 形成在所述基板上的多个凸起结构,每两个相邻的凸起结构被宽度小于30nm的预定空腔隔开,所述凸结构包括多组,并且每组包括多于两个凸结构; 形成在凸结构的顶部上的多个浮膜,每个悬浮膜对应于一组凸结构,每个浮动膜的与每组中的中间凸结构的顶部相对应的区域形成为沟道区,以及 在沟道区两侧的每个浮膜的区域分别形成为具有相反导电类型的源极区域和漏极区域; 以及形成在每个通道区域上的栅极堆叠。

    Tunneling device and method for forming the same
    6.
    发明授权
    Tunneling device and method for forming the same 有权
    隧道装置及其形成方法

    公开(公告)号:US08815690B2

    公开(公告)日:2014-08-26

    申请号:US13147465

    申请日:2011-06-24

    IPC分类号: H01L21/336

    摘要: The present disclosure provides a tunneling device, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; and a gate stack formed on the channel region and a first side wall and a second side wall formed on two sides of the gate stack, wherein the gate stack comprises: a first gate dielectric layer; at least a first gate electrode and a second gate electrode formed on the first gate dielectric layer; a second gate dielectric layer formed between the first gate electrode and the first side wall; and a third gate dielectric layer formed between the second gate electrode and the second side wall.

    摘要翻译: 本公开提供一种隧道装置,其包括:基板; 形成在所述基板中的沟道区域,以及形成在所述沟道区域的两侧的源极区域和漏极区域; 以及形成在所述沟道区上的栅极堆叠以及形成在所述栅极堆叠的两侧上的第一侧壁和第二侧壁,其中所述栅极堆叠包括:第一栅极介电层; 形成在所述第一栅极介电层上的至少第一栅电极和第二栅电极; 形成在所述第一栅电极和所述第一侧壁之间的第二栅介质层; 以及形成在第二栅电极和第二侧壁之间的第三栅介质层。

    Electrochemical cell
    7.
    发明申请
    Electrochemical cell 有权
    电化学电池

    公开(公告)号:US20050181278A1

    公开(公告)日:2005-08-18

    申请号:US10778457

    申请日:2004-02-13

    申请人: Ning Cui Peter Tsai

    发明人: Ning Cui Peter Tsai

    摘要: A cylindrical alkaline electrochemical cell is disclosed that includes a gel free anode. The anode includes a free flowing zinc powder with a preassembly tap density between 1.6 g/cc and 2.9 g/cc. In one embodiment, zinc powder with the desired tap density may be obtained by mixing zinc agglomerates with zinc flakes.

    摘要翻译: 公开了一种包括无凝胶阳极的圆柱形碱性电化学电池。 阳极包括自由流动的锌粉,其预组装振实密度在1.6g / cc至2.9g / cc之间。 在一个实施方案中,可以通过将锌附聚物与锌薄片混合来获得具有所需振实密度的锌粉末。

    Tunneling field effect transistor and method for forming the same
    8.
    发明授权
    Tunneling field effect transistor and method for forming the same 有权
    隧道场效应晶体管及其形成方法

    公开(公告)号:US08860140B2

    公开(公告)日:2014-10-14

    申请号:US13147470

    申请日:2011-06-24

    摘要: The present disclosure provides a TFET, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; a gate stack formed on the channel region, wherein the gate stack comprises: a gate dielectric layer, and at least a first gate electrode and a second gate electrode distributed in a direction from the source region to the drain region and formed on the gate dielectric layer, and the first gate electrode and the second gate electrode have different work functions; and a first side wall and a second side wall formed on a side of the first gate electrode and on a side of the second gate electrode respectively.

    摘要翻译: 本公开提供了一种TFET,其包括:基板; 形成在所述衬底中的沟道区,以及形成在所述沟道区的两侧的源极区和漏极区; 形成在所述沟道区上的栅极叠层,其中所述栅极堆叠包括:栅极电介质层,以及至少第一栅极电极和第二栅极电极,所述栅极电极和第二栅极电极沿着从所述源极区域到所述漏极区域的方向分布并形成在所述栅极电介质上 第一栅电极和第二栅电极具有不同的功函数; 以及分别形成在第一栅电极的一侧和第二栅极侧的第一侧壁和第二侧壁。

    ELECTROCHEMICAL CELL AND CURRENT COLLECTOR ASSEMBLY THEREFOR
    9.
    发明申请
    ELECTROCHEMICAL CELL AND CURRENT COLLECTOR ASSEMBLY THEREFOR 审中-公开
    电化学电池和电流收集器组件

    公开(公告)号:US20080070098A1

    公开(公告)日:2008-03-20

    申请号:US11865394

    申请日:2007-10-01

    IPC分类号: H01M2/12

    摘要: Electrochemical cells, and particularly a current collector assembly for a cell that forms an electrically conductive path between a cell electrode and a terminal of the cell, are described, along with a method for manufacturing the same. The current collector includes a non-conductive core and a conductive outer surface layer disposed on the core and shaped as en elongated rod. A seal hub gasket for sealing the open end of a cell container and for venting gasses when exposed to excessive pressure is also described. The current collector includes a first diameter portion and a reduced second diameter portion, wherein the first diameter portion engages the seal in a non-vented state and during high pressure venting the seal moves relative to the current collector toward the second reduced diameter portion to allow venting of high pressure gases.

    摘要翻译: 连同其制造方法一起描述了电化学电池,特别是用于在电池电极和电池的端子之间形成导电路径的电池的集电器组件。 集电器包括非导电芯和设置在芯上的导电外表面层,并且形成为细长的杆。 还描述了用于密封电池容器的开口端并暴露于过大压力时用于排放气体的密封毂垫圈。 集流器包括第一直径部分和减小的第二直径部分,其中第一直径部分以非通气状态接合密封件,并且在高压通气期间,密封件相对于集电器朝向第二缩径部分移动以允许 排气高压气体。

    TUNNELING FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    10.
    发明申请
    TUNNELING FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD FOR FORMING THE SAME 有权
    隧道场效应晶体管结构及其形成方法

    公开(公告)号:US20130105764A1

    公开(公告)日:2013-05-02

    申请号:US13640929

    申请日:2012-08-28

    IPC分类号: H01L29/775 H01L21/335

    CPC分类号: H01L29/78603 H01L29/7391

    摘要: A tunneling field effect transistor structure and a method for forming the same are provided. The tunneling field effect transistor structure comprises: a substrate; a plurality of convex structures formed on the substrate, every two adjacent convex structures being separated by a predetermined cavity less than 30 nm in width, the convex structures comprising a plurality of sets, and each set comprising more than two convex structures; a plurality of floated films formed on tops of the convex structures, each floated film corresponding to one set of convex structures, a region of each floated film corresponding to a top of an intermediate convex structure in each set being formed as a channel region, and regions of the each floated film at both sides of the channel region are formed as a source region and a drain region with opposite conductivity types respectively; and a gate stack formed on each channel region.

    摘要翻译: 提供隧道场效应晶体管结构及其形成方法。 隧道场效应晶体管结构包括:衬底; 形成在所述基板上的多个凸起结构,每两个相邻的凸起结构被宽度小于30nm的预定空腔隔开,所述凸结构包括多组,并且每组包括多于两个凸结构; 形成在凸结构的顶部上的多个浮膜,每个悬浮膜对应于一组凸结构,每个浮动膜的与每组中的中间凸结构的顶部相对应的区域形成为沟道区,以及 在沟道区两侧的每个浮膜的区域分别形成为具有相反导电类型的源极区域和漏极区域; 以及形成在每个通道区域上的栅极堆叠。