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公开(公告)号：US06187622B1
公开(公告)日：2001-02-13
申请号：US09003515
申请日：1998-01-06
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/60
摘要： A semiconductor memory device achieves a high capacitance value even when the elements are made extremely small as the degree of integration is increased. A method of producing such a semiconductor memory maintains a high capacitance value while achieving increased integration. A semiconductor memory device includes adjacent capacitor lower electrodes which are separated by a width of 0.2 &mgr;m while the ratio of the capacitor lower electrode height to the separation width is 1, the capacitor upper electrode covers the capacitor insulation film, and steps generated in the separated portion of the capacitor lower electrodes are filled by the upper electrode material. A method of manufacturing produces a semiconductor memory device wherein the capacitor upper electrode is formed in plasma which includes etchable gas by chemical or physical action.
摘要翻译： 即使当元件的集成度增加时，半导体存储器件也实现了高的电容值。 制造这种半导体存储器的方法保持高的电容值，同时实现增加的集成。 半导体存储器件包括相邻的电容器下电极，其间隔0.2μm的宽度，而电容器下电极高度与分离宽度的比率为1，电容器上电极覆盖电容器绝缘膜，并且分离的步骤 电容器下电极的一部分由上电极材料填充。 一种制造方法产生半导体存储器件，其中电容器上电极通过化学或物理作用形成包括可蚀刻气体的等离子体。
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2.发明授权Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效制造半导体器件的方法，其包括具有由铱或钌形成的下电极的电容器公开(公告)号：US06420191B2
公开(公告)日：2002-07-16
申请号：US09768552
申请日：2001-01-25
IPC分类号： H01G706
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.
摘要翻译： 诸如包括电容器的DRAM的半导体器件，其中电容器的下电极是金属电极，金属电极主要由钌或铱组成，并且通过没有氧化物层的材料直接连接到电容器电介质膜 金属电极形成在金属电极的表面上。 与使用铂形成电极的常规情况相比，由铱或钌制成的下电极可以容易地被处理，并且当形成电容器电介质膜时也不能被氧化，因此可以防止电容的减小。
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公开(公告)号：US6049103A
公开(公告)日：2000-04-11
申请号：US620606
申请日：1996-03-22
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1085 , H01L28/55
摘要： A thin film capacitor structure of a random access memory includes plurality of capacitors formed on an interlayer insulating film. The capacitor structure includes a plurality of lower electrodes formed on the interlayer insulating film, a first dielectric film formed over the plurality of lower electrodes and portions of the interlayer insulating film between lower electrodes, a second dielectric film formed on the first dielectric film, and an upper electrode formed on the second dielectric layer. A silicon oxide film is formed at the step portions of the first dielectric film which result at the periphery of the lower electrodes to prevent leakage current between adjacent capacitors.
摘要翻译： 随机存取存储器的薄膜电容器结构包括形成在层间绝缘膜上的多个电容器。 电容器结构包括形成在层间绝缘膜上的多个下电极，形成在多个下电极上的第一电介质膜和下电极之间的层间绝缘膜的部分，形成在第一电介质膜上的第二电介质膜，以及 形成在第二介电层上的上电极。 在第一电介质膜的台阶部分形成氧化硅膜，导致下部电极的周围，以防止相邻电容器之间的漏电流。
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公开(公告)号：US06344991B1
公开(公告)日：2002-02-05
申请号：US09741797
申请日：2000-12-22
申请人： Noboru Mikami , Takeharu Kuroiwa
发明人： Noboru Mikami , Takeharu Kuroiwa
IPC分类号： G11C1122
CPC分类号： G11C11/22 , G11C11/5657
摘要： The inventive nonvolatile semiconductor memory device, rewriting stored information with the quantity of charges of a dielectric material, comprises a ferroelectric film having a hysteresis characteristic in a dependency of an electric field density and an-electric field and a nonlinear element electrically connected with the ferroelectric film. In this nonlinear element, the quantity of increase of a positive electric flux density with respect to an electric field is small in a low field region and large in a high field region in a dependency of the electric flux density and the electric field. Thus, it is possible to obtain a nonvolatile semiconductor memory device capable of suppressing dispersion in coercive filed and preventing reduction of voltage resistance without increasing the chip area.
摘要翻译： 本发明的非易失性半导体存储器件，用介电材料的电荷量重写存储的信息，包括依赖于电场密度和电场的滞后特性的铁电体膜和与铁电体电连接的非线性元件 电影。 在该非线性元件中，在电场密度和电场的依赖性方面，在低场区域中正电流密度的增加量相对于电场的增加量较大，高场区域的增大量较大。 因此，可以获得能够抑制矫顽磁场中的分散并防止电阻降低而不增加芯片面积的非易失性半导体存储器件。
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5.发明授权Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen 失效具有由虹膜或钌形成的电容器电极和一定量的氧的半导体器件
公开(公告)号：US6015989A
公开(公告)日：2000-01-18
申请号：US770510
申请日：1996-12-20
IPC分类号： H01L21/28 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L28/60
摘要： A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.
摘要翻译： 半导体器件包括具有主表面的半导体衬底; 形成在所述半导体衬底上并具有限定在其中的开口以在所述半导体衬底的主表面上开口的第一层间绝缘膜; 以Si为主要成分并嵌入开口的连接件; 通过连接构件与半导体衬底的主表面电连接的下电容器电极; 形成在下电容器电极上的电容器电介质膜; 形成在电容器电介质膜上的上电容器电极; 以及形成在电容器上电极上的第二层间绝缘膜。 上述下部电容器电极由选自钌和铱的主要成分制成，并且含有0.001至0.1原子％的氧和/或0.1至5的至少一种杂质元素 按原子计。 杂质元素选自钛，铬，钨，钴，钯和钼。
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公开(公告)号：US06239460B1
公开(公告)日：2001-05-29
申请号：US08671632
申请日：1996-06-28
IPC分类号： H01L27108
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.
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公开(公告)号：US5939744A
公开(公告)日：1999-08-17
申请号：US953559
申请日：1997-10-17
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1085 , H01L28/55
摘要： In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.
摘要翻译： 在包括下电极，电介质膜和上电极的随机存取存储器的薄膜电容器中，抑制了电介质膜中缺陷的产生。 换句话说，阻止了杂质向电介质膜的扩散。 另一方面，实现了电介质膜和电极的晶格匹配。 因此，防止了电容器的介电常数降低，并且提高了半导体器件的质量。
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公开(公告)号：US08378674B2
公开(公告)日：2013-02-19
申请号：US12601098
申请日：2008-05-27
申请人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
发明人： Taisuke Furukawa , Takeharu Kuroiwa , Shingo Tomohisa , Takashi Takenaga , Masakazu Taki , Hiroshi Takada , Yuji Abe
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/072 , G01R33/091
摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.
摘要翻译： 一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。 平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部 并且在输出侧端部的前方配置有磁阻元件。 在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于 第一弯曲部分的连续形成。
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公开(公告)号：US20110233699A1
公开(公告)日：2011-09-29
申请号：US13073552
申请日：2011-03-28
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01L27/0207 , H01L43/08
摘要： Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.
摘要翻译： 磁存储元件包括通过外部磁场改变磁化方向的记录层，具有易于轴和硬轴交叉的容易轴，第一导电层在记录层的布局位置的易轴方向交叉方向上形成磁场，第二导电 层在与第一导电层交叉的方向上延伸，并且在记录层的布置位置处在硬轴的交叉方向上形成磁场。 记录层在第一导电层和第二导电层之间具有至少一部分。 从第一和第二导电层和记录层被层叠的方向观察的平面状记录层相对于第一导电层的虚拟第一中心线位于侧面和位于另一侧的其它部分，沿着第一导电层 从层叠方向观察。 从层叠方向观察的部分的面积小于或等于其他部分的三分之一面积。
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公开(公告)号：US07973376B2
公开(公告)日：2011-07-05
申请号：US12549695
申请日：2009-08-28
申请人： Haruo Furuta , Ryoji Matsuda , Shuichi Ueno , Takeharu Kuroiwa
发明人： Haruo Furuta , Ryoji Matsuda , Shuichi Ueno , Takeharu Kuroiwa
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO2 is formed.
摘要翻译： 具有包含记忆精度不劣化的TMR膜的存储单元的半导体装置及其制造方法。 在数字线的形成区域的一部分的TMR下电极的平面图中对应的区域选择性地形成TMR元件（TMR膜，TMR上电极）。 TMR上电极由Ta的30-100nm厚度形成，并且在制造过程中也用作硬掩模。 在TMR元件的整个表面和TMR下电极的整个表面上形成由LT-SiN形成的层间绝缘膜，覆盖包括TMR下电极的侧表面的整个表面的层间绝缘膜和 包括LT-SiN。 形成覆盖整个表面并包含SiO 2的层间绝缘膜。
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