Substituted vinyl pyridine derivative and drugs containing the same
    3.
    发明授权
    Substituted vinyl pyridine derivative and drugs containing the same 失效
    取代的乙烯基吡啶衍生物和含有它的药物

    公开(公告)号:US5935977A

    公开(公告)日:1999-08-10

    申请号:US68986

    申请日:1998-05-26

    摘要: The present invention relates to a substituted vinylpyridine derivative represented by the following formula (1): ##STR1## (wherein R.sup.1 represents a hydrogen atom, an alkyl group, etc., R.sup.2 represents an alkyl group; one of R.sup.3 and R.sup.4, which are different from each other, represents a hydrogen atom and the other represents a nitrile group, R.sup.5 represents an aryl group or a heteroaryl group, X represents an oxygen atom, etc., and one of Q.sup.1, Q.sup.2, and Q.sup.3 represents a nitrogen atom and the other two represent CH); a salt of the derivative; and a drug containing the derivative or salt as the active ingredient. Due to strong PDE inhibitory action and TNF-.alpha. production inhibitory action, the derivative, salt, and drug are useful for the prevention and treatment of a wide variety of inflammatory diseases and autoimmune diseases.

    摘要翻译: PCT No.PCT / JP97 / 03354 Sec。 371日期:1998年5月26日 102(e)日期1998年5月26日PCT 1997年9月22日PCT公布。 公开号WO98 / 13348 日期:1998年4月2日本发明涉及由下式(1)表示的取代乙烯基吡啶衍生物:其中,R1表示氢原子,烷基等,R2表示烷基,R3和R4之一, 彼此不同,表示氢原子,另一个表示腈基,R 5表示芳基或杂芳基,X表示氧原子等,Q 1,Q 2和Q 3中的一个表示氮 原子,另外两个表示CH); 衍生物的盐; 和含有衍生物或盐的活性成分的药物。 由于强烈的PDE抑制作用和TNF-α产生抑制作用,衍生物,盐和药物可用于预防和治疗各种炎性疾病和自身免疫性疾病。

    Semiconductor device and method of manufacturing the same
    5.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08928143B2

    公开(公告)日:2015-01-06

    申请号:US13244369

    申请日:2011-09-24

    申请人: Kazuo Yamazaki

    发明人: Kazuo Yamazaki

    摘要: To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.

    摘要翻译: 为了防止具有不同高度的两个触点,共享至少一个层间绝缘膜并且由于其不对准而彼此靠近彼此设置,根据本发明的半导体器件具有在层间绝缘中的凹部 其中具有较低高度的第一接触件,由第一接触件的上表面形成的凹部和氮化硅侧壁形成在凹部中,以从第一接触件的上表面延伸并沿着第一接触件的侧表面 凹槽

    Machine tool
    6.
    发明授权
    Machine tool 有权
    机床

    公开(公告)号:US08920080B2

    公开(公告)日:2014-12-30

    申请号:US13070870

    申请日:2011-03-24

    摘要: A machine tool 1 comprises a bed 11, a column 12, a spindle head 15, a spindle 16, a saddle 17, a table 18, a feed mechanism for moving the spindle head 15, the saddle 17 and the table 18 in Z-axis, Y-axis and X-axis directions respectively, a position detector for detecting the positions of the spindle head 15, saddle 17 and table 18, a controller for feedback controlling the feed mechanism, a position detector 51 for detecting the position of the spindle head 15, a position detector 54 for detecting the position of the spindle head 15, a position detector 57 for detecting the position of the table 18, and a measurement frame 50 which is configured with a different member from the bed 11 and the column 12 and on which readers 53, 56, 59 of the position detectors 51, 54, 57 are disposed.

    摘要翻译: 机床1包括床11,柱12,主轴头15,主轴16,鞍座17,工作台18,用于使主轴头15,鞍座17和工作台18在Z轴方向上移动的进给机构, 轴,Y轴和X轴方向的位置检测器,用于检测主轴头15,鞍座17和工作台18的位置的位置检测器,用于反馈控制进给机构的控制器,位置检测器51, 主轴头15,用于检测主轴头15的位置的位置检测器54,用于检测工作台18的位置的位置检测器57以及配置有与床11和列的不同构件的测量框架50 位置检测器51,54,57的读取器53,56,59设置在其上。

    Solid-state imaging apparatus including pixel matrix with selectable blocks of output lines and imaging system using the solid-state imaging apparatus
    7.
    发明授权
    Solid-state imaging apparatus including pixel matrix with selectable blocks of output lines and imaging system using the solid-state imaging apparatus 有权
    固态成像装置包括具有可选择的输出线块的像素矩阵和使用固态成像装置的成像系统

    公开(公告)号:US08325260B2

    公开(公告)日:2012-12-04

    申请号:US12628271

    申请日:2009-12-01

    IPC分类号: H04N3/14 H04N5/335

    CPC分类号: H04N5/3742

    摘要: It is an object of the present invention to provide a solid-state imaging apparatus that outputs digital signals at high speed. A solid-state imaging apparatus is provided that includes plural analog-to-digital converters that convert analog signals obtained by photoelectric conversion into digital signals, plural digital memories that store the digital signals converted by the analog-to-digital converters, plural block digital output lines that are provided to correspond to blocks of the plural digital memories and to which the digital signals stored in the plural digital memories included in the blocks are output, a common digital output line that outputs the digital signals output from the plural block digital output lines, buffer circuits that buffer the digital signals output from the block digital output lines, and block selecting units that can switch the block digital output lines electrically connected to the common digital output line.

    摘要翻译: 本发明的目的是提供一种以高速输出数字信号的固态成像装置。 提供了一种固态成像装置,其包括将通过光电转换获得的模拟信号转换为数字信号的多个模数转换器,存储由模数转换器转换的数字信号的多个数字存储器,多个数字数字 输出对应于多个数字存储器中的块并被存储在包含在块中的多个数字存储器中的数字信号的输出线,输出从多个数字输出端输出的数字信号的公共数字输出线 用于缓冲从块数字输出线输出的数字信号的缓冲电路,以及可以切换电连接到公共数字输出线的块数字输出线的块选择单元。

    METHOD OF DRIVING SOLID-STATE IMAGING APPARATUS
    8.
    发明申请
    METHOD OF DRIVING SOLID-STATE IMAGING APPARATUS 审中-公开
    驱动固态成像装置的方法

    公开(公告)号:US20120013778A1

    公开(公告)日:2012-01-19

    申请号:US13243168

    申请日:2011-09-23

    IPC分类号: H04N5/335

    摘要: When a horizontal skipping operation is performed in a solid-state imaging apparatus that includes an A/D converting circuit in each column and that applies an arithmetic operation process to a digitalized signal and an arithmetic operation is performed with signals held by a plurality of register circuits, A/D converters and register circuits in columns in which signals are skipped, or not read out, are not involved in the operations. A more consideration is needed in terms of the use efficiency of circuits. A unit for connecting a register circuit of a certain column and a register circuit of a different column is arranged.

    摘要翻译: 当在包括每列中的A / D转换电路的固态成像装置中执行水平跳过操作并且对数字化信号应用算术运算处理并且利用由多个寄存器保持的信号执行算术运算时 电路,A / D转换器和信号被跳过或未读出的列中的寄存器电路不涉及操作。 在电路的使用效率方面需要更多的考虑。 用于连接特定列的寄存器电路和不同列的寄存器电路的单元被布置。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20120012910A1

    公开(公告)日:2012-01-19

    申请号:US13244369

    申请日:2011-09-24

    申请人: Kazuo Yamazaki

    发明人: Kazuo Yamazaki

    IPC分类号: H01L27/108

    摘要: To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact having a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.

    摘要翻译: 为了防止具有不同高度的两个触点,共享至少一个层间绝缘膜并且由于其不对准而彼此靠近彼此设置,根据本发明的半导体器件具有在层间绝缘中的凹部 其中具有较低高度的第一接触件,由第一接触件的上表面形成的凹部和氮化硅侧壁形成在凹部中,以从第一接触件的上表面延伸并沿着第一接触件的侧表面 凹槽

    Semiconductor device and method of manufacturing the same
    10.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US08053360B2

    公开(公告)日:2011-11-08

    申请号:US12356844

    申请日:2009-01-21

    申请人: Kazuo Yamazaki

    发明人: Kazuo Yamazaki

    IPC分类号: H01L21/4763

    摘要: To prevent two contacts that have different heights, share at least one interlayer insulating film and are disposed close to each other from being short-circuited to each other due to misalignment thereof, a semiconductor device according to the invention has a recess in an interlayer insulating film in which a first contact hiving a lower height, the recess being formed by the upper surface of the first contact, and a silicon nitride sidewall is formed in the recess to extend from the upper surface of the first contact and along the side surface of the recess.

    摘要翻译: 为了防止具有不同高度的两个触点,共享至少一个层间绝缘膜并且由于其不对准而彼此靠近彼此设置,根据本发明的半导体器件具有在层间绝缘中的凹部 其中第一接触件具有较低的高度,所述凹部由所述第一接触件的上表面形成,并且在所述凹部中形成氮化硅侧壁,以从所述第一接触件的上表面延伸并沿着所述第一接触件的侧表面 凹槽