公开(公告)号：US11658265B2

公开(公告)日：2023-05-23

申请号：US17645656

申请日：2021-12-22

Applicant: OSRAM OLED GmbH

Inventor： Bastian Galler ,  Jürgen Off

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  G01N21/33

CPC classification number: H01L33/10 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/22 ,  H01L33/325 ,  H01L33/42 ,  G01N21/33 ,  H01L2933/0016

Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm−2.

公开(公告)号：US11616164B2

公开(公告)日：2023-03-28

申请号：US16955560

申请日：2019-01-17

Applicant: OSRAM OLED GmbH

Inventor： Philipp Drechsel ,  Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

IPC: H01L33/00 ,  H01L33/12

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

公开(公告)号：US20200335658A1

公开(公告)日：2020-10-22

申请号：US16955560

申请日：2019-01-17

Applicant: OSRAM OLED GmbH

Inventor： Philipp Drechsel ,  Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

IPC: H01L33/00 ,  H01L33/12

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

公开(公告)号：US11329193B2

公开(公告)日：2022-05-10

申请号：US16757702

申请日：2018-10-19

Applicant: OSRAM OLED GmbH

Inventor： Xiaojun Chen ,  Alexander Frey ,  Philipp Drechsel ,  Thomas Lehnhardt ,  Lise Lahourcade ,  Jürgen Off

IPC: H01L33/22 ,  H01L33/24 ,  H01L33/00 ,  H01L33/02 ,  H01L33/12 ,  H01L33/32

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

公开(公告)号：US10862003B2

公开(公告)日：2020-12-08

申请号：US16303571

申请日：2017-05-18

Applicant: OSRAM OLED GMBH

Inventor： Thomas Lehnhardt ,  Werner Bergbauer ,  Jürgen Off ,  Lise Lahourcade ,  Philipp Drechsel

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/18 ,  H01L33/32 ,  H01L33/38

Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.

公开(公告)号：US11276800B2

公开(公告)日：2022-03-15

申请号：US16493499

申请日：2018-03-13

Applicant: OSRAM OLED GMBH

Inventor： Bastian Galler ,  Jürgen Off

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  G01N21/33

Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm−2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view.

公开(公告)号：US20220115559A1

公开(公告)日：2022-04-14

申请号：US17645656

申请日：2021-12-22

Applicant: OSRAM OLED GmbH

Inventor： Bastian Galler ,  Jürgen Off

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42

Abstract: In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm−2.

公开(公告)号：US10727052B2

公开(公告)日：2020-07-28

申请号：US16240142

申请日：2019-01-04

Applicant: OSRAM OLED GmbH

Inventor： Tobias Gotschke ,  Jürgen Off ,  Korbinian Perzlmaier

IPC: H01L27/32 ,  H01L21/02 ,  H01L33/00 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40 ,  H01L21/78 ,  H01L33/22 ,  H01L33/32

Abstract: A semiconductor chip is disclosed. In an embodiment a semiconductor chip includes a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer and a semiconductor layer sequence, which, at least in places, is in direct contact with the mask layer, wherein the semiconductor layer sequence is disposed on the mask layer, wherein the mask layer comprises a light-transmissive material, and wherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence.