-
公开(公告)号:US11888097B2
公开(公告)日:2024-01-30
申请号:US17253566
申请日:2019-07-01
Applicant: OSRAM OLED GmbH
Inventor: Konrad Wagner , Daniel Richter , Gunnar Petersen , Nicole Berner , Michael Förster
IPC: H01L33/54 , H01L25/075 , H01L33/56
CPC classification number: H01L33/54 , H01L25/0753 , H01L33/56 , H01L2933/005
Abstract: An optoelectronic component (1) is specified, with at least one radiation-emitting semiconductor chip generating electromagnetic radiation during operation, a coating surrounding the at least one semiconductor chip in lateral directions, a magnetic structure covered by the coating, wherein the magnetic structure enables the component to be identified. Furthermore, a process for the manufacture of such an optoelectronic component is given.
-
2.
公开(公告)号:US11810845B2
公开(公告)日:2023-11-07
申请号:US16758371
申请日:2018-10-30
Applicant: OSRAM OLED GmbH
Inventor: Jörg Erich Sorg , Konrad Wagner , Michael Förster , Josef Hirn
IPC: H01L23/498 , H01L21/48 , H01L33/62 , H01L33/64 , H01L23/373 , H01L25/075 , H01L25/16 , H01L23/15
CPC classification number: H01L23/49827 , H01L21/486 , H01L25/0753 , H01L25/167 , H01L33/62 , H01L33/641 , H01L33/642 , H01L23/15 , H01L23/373 , H01L23/3731 , H01L23/3732 , H01L23/3733 , H01L23/3736 , H01L23/3738 , H01L2224/48091 , H01L2933/0066 , H01L2933/0075
Abstract: Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).
-
公开(公告)号:US11538969B2
公开(公告)日:2022-12-27
申请号:US16954472
申请日:2018-12-18
Applicant: Osram OLED GmbH
Inventor: Michael Foerster , Konrad Wagner , Benjamin Schulz , Stefan Morgott , I-Hsin Lin-Lefebvre
IPC: H01L33/60 , H01L25/075 , H01L33/50
Abstract: In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.
-
-