公开(公告)号：US20210184082A1

公开(公告)日：2021-06-17

申请号：US16606226

申请日：2018-04-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion STOLL ,  Alexander BAUMGARTNER ,  Alexander WILM

IPC: H01L33/50 ,  C09K11/08 ,  C12M1/00 ,  A01G7/04

Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1-x*-y*-z*)Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.

公开(公告)号：US20160079489A1

公开(公告)日：2016-03-17

申请号：US14785620

申请日：2014-04-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Markus RICHTER ,  Alexander BAUMGARTNER ,  Hans-Christoph GALLMEIER ,  Tony ALBRECHT

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L33/507 ,  H01L33/0095 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3),applying the semiconductor bodies (1) to a carrier (2),applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1),applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, andremoving the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).

Abstract translation: 提供了一种用于制造多个辐射发射半导体芯片的方法，具有以下步骤：提供适于从辐射出射面（3）发射电磁辐射的多个半导体本体（1），施加半导体本体（ 1）到载体（2）上，在半导体体（1）之间的载体（2）的区域上施加第一掩模层（4），在半导体本体（1）的整个表面上施加转换层 ）和第一掩模层（4），并且去除第一掩模层（4），使得在每种情况下，在半导体主体的辐射出射面（3）上出现转换层（5） 1）。