Optoelectronic semiconductor component and method for producing such an optoelectronic semiconductor component
    2.
    发明授权

    公开(公告)号:US09276183B2

    公开(公告)日:2016-03-01

    申请号:US14386239

    申请日:2013-03-18

    Abstract: In at least one embodiment of the optoelectronic semiconductor component (1), the optoelectronic semiconductor component has a support (2). At least one optoelectronic semiconductor chip (3) with a radiation outlet face (30) is applied onto a support upper face (20). A sacrificial layer (5) is located over the radiation outlet face (30) in the direction away from the support (2). A housing body (6) which has a housing upper face (60) is molded around the semiconductor chip (3) and/or around the sacrificial layer (5) in a lateral direction parallel to the radiation outlet face (30). A sacrificial layer (5) upper face (50) which faces away from the radiation outlet face (30) is free of a housing body (6) material.

    Abstract translation: 在光电子半导体部件(1)的至少一个实施例中,光电子半导体部件具有支撑件(2)。 具有辐射出射面(30)的至少一个光电半导体芯片(3)被施加到支撑上表面(20)上。 牺牲层(5)沿远离支撑件(2)的方向位于辐射出口面(30)的上方。 具有壳体上表面(60)的壳体(6)在平行于辐射出口面(30)的横向方向围绕半导体芯片(3)和/或围绕牺牲层(5)模制。 背离辐射出口面(30)的牺牲层(5)上表面(50)没有壳体(6)材料。

    OPTOELECTRONIC COMPONENT
    3.
    发明申请

    公开(公告)号:US20180287018A1

    公开(公告)日:2018-10-04

    申请号:US15764938

    申请日:2016-09-29

    Abstract: An optoelectronic component includes a layer configured to generate an electromagnetic radiation including a first wavelength; a second layer including a conversion material and a scattering material, wherein the conversion material is configured to shift the first wavelength of the electromagnetic radiation to a second wavelength, and the scattering material is configured to scatter the first wavelength to a greater extent than the second wavelength.

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SUCH AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    6.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SUCH AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
    用于生产这种光电半导体元件的光电子半导体元件和方法

    公开(公告)号:US20150041832A1

    公开(公告)日:2015-02-12

    申请号:US14386239

    申请日:2013-03-18

    Abstract: In at least one embodiment of the optoelectronic semiconductor component (1), the optoelectronic semiconductor component has a support (2). At least one optoelectronic semiconductor chip (3) with a radiation outlet face (30) is applied onto a support upper face (20). A sacrificial layer (5) is located over the radiation outlet face (30) in the direction away from the support (2). A housing body (6) which has a housing upper face (60) is molded around the semiconductor chip (3) and/or around the sacrificial layer (5) in a lateral direction parallel to the radiation outlet face (30). A sacrificial layer (5) upper face (50) which faces away from the radiation outlet face (30) is free of a housing body (6) material.

    Abstract translation: 在光电子半导体部件(1)的至少一个实施例中,光电子半导体部件具有支撑件(2)。 具有辐射出射面(30)的至少一个光电半导体芯片(3)被施加到支撑上表面(20)上。 牺牲层(5)沿远离支撑件(2)的方向位于辐射出口面(30)的上方。 具有壳体上表面(60)的壳体(6)在平行于辐射出口面(30)的横向方向围绕半导体芯片(3)和/或围绕牺牲层(5)模制。 背离辐射出口面(30)的牺牲层(5)上表面(50)没有壳体(6)材料。

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