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    CONVERSION ELEMENT AND ILLUMINANT
    1.
    发明申请
    CONVERSION ELEMENT AND ILLUMINANT 有权
    转换元件和照明器

    公开(公告)号：US20150003042A1

    公开(公告)日：2015-01-01

    申请号：US14380931

    申请日：2013-02-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Uwe Strauß

    IPC: F21V13/14 ,  F21K99/00 ,  G02B5/136 ,  G02B5/02

    CPC classification number: F21V13/14 ,  F21S41/16 ,  F21V7/05 ,  F21V7/22 ,  F21V9/30 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B5/0242 ,  G02B5/0289 ,  G02B5/0294 ,  G02B5/136 ,  H01L33/44 ,  H01L33/507 ,  H01L2933/0091

    Abstract: A conversion element (10) is specified, comprising a scattering layer (12), a reflection layer (14), and a conversion layer (16) arranged between the scattering layer (12) and the reflection layer (14). The scattering layer (12) is designed to transmit a first portion (20) of a primary radiation (18) impinging on it from a side facing away from the conversion layer (16) into the conversion layer (16), and to scatter a second portion (22) of the primary radiation (18) impinging on it towards that side of the scattering layer (12) which faces away from the conversion layer (16). The conversion layer (16) comprises at least one conversion means (25) which is designed to convert at least part of the first portion of the primary radiation (18) into a second radiation (19) having a higher wavelength different from the primary radiation (18). The reflection layer (14) has a reflective effect at least with regard to the second radiation (19).

    Abstract translation: 指定转换元件（10），其包括布置在散射层（12）和反射层（14）之间的散射层（12），反射层（14）和转换层（16）。 散射层（12）被设计成将从该转换层（16）背离的一侧的入射到其上的初级辐射（18）的第一部分（20）透射到转换层（16）中，并将 主辐射（18）的第二部分（22）朝着离开转换层（16）的散射层（12）的那一侧朝其上撞击。 转换层（16）包括至少一个转换装置（25），其被设计成将主辐射（18）的第一部分的至少一部分转换成具有不同于初级辐射的较高波长的第二辐射（19） （18）。 至少相对于第二辐射（19），反射层（14）具有反射效应。

    Edge-Emitting Semiconductor Laser Diode and Method of Manufacturing the Same
    2.
    发明申请
    Edge-Emitting Semiconductor Laser Diode and Method of Manufacturing the Same 有权

    公开(公告)号：US20220102941A1

    公开(公告)日：2022-03-31

    申请号：US17596642

    申请日：2020-07-09

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Hetzl ,  Petrus Sundgren ,  Jens Ebbecke ,  Uwe Strauß

    IPC: H01S5/20 ,  H01S5/028 ,  H01S5/02 ,  H01S5/10 ,  H01S5/343

    Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.

    Semiconductor Strip Laser and Semiconductor Component
    3.
    发明申请
    Semiconductor Strip Laser and Semiconductor Component 有权
    半导体条激光器和半导体元件

    公开(公告)号：US20170054271A1

    公开(公告)日：2017-02-23

    申请号：US15119546

    申请日：2015-03-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Müller ,  Alfred Lell ,  Uwe Strauß

    IPC: H01S5/024 ,  H01S5/22

    CPC classification number: H01S5/02476 ,  H01S5/0224 ,  H01S5/02469 ,  H01S5/02484 ,  H01S5/0425 ,  H01S5/168 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2226 ,  H01S5/32341 ,  H01S2301/176

    Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

    Abstract translation: 公开了半导体条激光器和半导体部件。 在实施例中，激光器包括半导体主体的第一导电类型的第一半导体区域，半导体主体的第二不同导电类型的第二半导体区域，半导体主体的至少一个有源区域被配置为在第二半导体区域之间产生激光辐射 第一和第二半导体区域。 激光器还包括至少在第二半导体区域中形成的带状波导，并且在运行期间沿着在有源区域中产生的激光辐射的波导方向提供一维波导，在第一半导体区域上的第一电接触， 在第二半导体区域上的第二电接触和至少一个尺寸稳定地连接到半导体本体的散热器，至少达到220℃的温度，并且具有至少50W / m·K的平均热导率。

    Semiconductor Laser Diode
    4.
    发明申请
    Semiconductor Laser Diode 有权
    半导体激光二极管

    公开(公告)号：US20140334508A1

    公开(公告)日：2014-11-13

    申请号：US14361647

    申请日：2012-11-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christian Lauer ,  Harald König ,  Uwe Strauß ,  Alexander Bachmann

    IPC: H01S5/024 ,  H01S5/10

    CPC classification number: H01S5/02469 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/2036 ,  H01S5/2054

    Abstract: A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence

    Abstract translation: 提供半导体激光二极管。 半导体层序列具有垂直一个地上下延伸的半导体层。 活性层包括具有大于或等于30μm的宽度的有源区，其通过辐射耦合出表面在操作期间发射激光辐射。 辐射耦合出表面由半导体层序列的侧表面形成，并且在相反的后表面形成在纵向上具有横向增益引导的谐振器。 由于操作，半导体层序列在影响的热区域被加热。 金属化层与半导体层序列的顶侧直接接触

    LIGHT-EMITTING ASSEMBLY HAVING A CARRIER
    6.
    发明申请
    LIGHT-EMITTING ASSEMBLY HAVING A CARRIER 有权
    具有载体的发光组件

    公开(公告)号：US20160126702A1

    公开(公告)日：2016-05-05

    申请号：US14895120

    申请日：2014-06-03

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Jelena Ristic ,  Martin Straßburg ,  Alfred Lell ,  Uwe Strauß

    IPC: H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S5/02

    CPC classification number: H01S5/3428 ,  H01L27/156 ,  H01L33/007 ,  H01L33/10 ,  H01L33/16 ,  H01L33/24 ,  H01L33/405 ,  H01L33/46 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02236 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18377 ,  H01S5/341 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4087 ,  H01S5/423

    Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

    Abstract translation: 组件包括载体和具有形成在载体上的芯的结构，其中芯具有具有两个端部区域的纵向延伸部，第一端部区域面向载体布置，并且第二端部区域布置成背离载体， 所述芯至少在外部区域中形成为导电的，所述区域至少部分地被活性区域层覆盖，所述活性区域层产生电磁辐射，在所述芯的至少一个端部区域中提供镜层的镜层 反射电磁辐射的方向，第一电接触层接触芯的导电区域，第二接触层接触有源区层。

    Semiconductor Laser with Improved Current Conduction
    7.
    发明申请
    Semiconductor Laser with Improved Current Conduction 有权
    具有改进电流传导的半导体激光器

    公开(公告)号：US20150255956A1

    公开(公告)日：2015-09-10

    申请号：US14430685

    申请日：2013-09-03

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Uwe Strauß ,  Teresa Wurm ,  Adrian Stefan Avramescu ,  Georg Brüderl ,  Christoph Eichler ,  Sven Gerhard

    IPC: H01S5/20 ,  H01S5/323 ,  H01S5/32 ,  H01S5/343 ,  H01S5/22 ,  H01S5/30

    CPC classification number: H01S5/2031 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031

    Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.

    Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。

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