公开(公告)号：US09787055B2

公开(公告)日：2017-10-10

申请号：US15119546

申请日：2015-03-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Müller ,  Alfred Lell ,  Uwe Strauβ

IPC: H01S5/024 ,  H01S5/022 ,  H01S5/042 ,  H01S5/323 ,  H01S5/16 ,  H01S5/22

CPC classification number: H01S5/02476 ,  H01S5/0224 ,  H01S5/02469 ,  H01S5/02484 ,  H01S5/0425 ,  H01S5/168 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2226 ,  H01S5/32341 ,  H01S2301/176

Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

公开(公告)号：US09722394B2

公开(公告)日：2017-08-01

申请号：US14361647

申请日：2012-11-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Lauer ,  Harald König ,  Uwe Strauβ ,  Alexander Bachmann

IPC: H01S5/024 ,  H01S5/10 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20

CPC classification number: H01S5/02469 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/2036 ,  H01S5/2054

Abstract: A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

公开(公告)号：US09768360B2

公开(公告)日：2017-09-19

申请号：US15265487

申请日：2016-09-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Fehrer ,  Alfred Lell ,  Martin Müller ,  Tilman Schlenker ,  Sönke Tautz ,  Uwe Strauβ

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/00 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/56 ,  H01L33/62 ,  H01S5/02 ,  H01S5/20 ,  H01S5/028

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/186 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0025 ,  H01L2933/005 ,  H01S5/02 ,  H01S5/028 ,  H01S5/20 ,  H01S2301/176 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

公开(公告)号：US09331453B2

公开(公告)日：2016-05-03

申请号：US14373998

申请日：2013-03-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Uwe Strauβ ,  Sönke Tautz ,  Alfred Lell ,  Clemens Vierheilig

IPC: H01S5/022 ,  H01S5/323 ,  H01S5/026 ,  H01S5/024

CPC classification number: H01S5/022 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/02469 ,  H01S5/0262 ,  H01S5/32341 ,  H01S2301/176

Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.

Abstract translation: 激光二极管器件具有在安装部分的壳体中具有基于氮化物复合半导体材料的安装部分和激光二极管芯片的壳体。 激光二极管芯片通过焊料层直接安装在安装部分上，焊料层的厚度大于或等于3μm。

公开(公告)号：US09843162B2

公开(公告)日：2017-12-12

申请号：US14895120

申请日：2014-06-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jelena Ristic ,  Martin Straβburg ,  Alfred Lell ,  Uwe Strauβ

IPC: H01S5/00 ,  H01S5/34 ,  H01L33/24 ,  H01S5/022 ,  H01S5/343 ,  H01L33/00 ,  H01L33/16 ,  H01L33/40 ,  H01S5/02 ,  H01S5/10 ,  H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01S5/3428 ,  H01L27/156 ,  H01L33/007 ,  H01L33/10 ,  H01L33/16 ,  H01L33/24 ,  H01L33/405 ,  H01L33/46 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02236 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18377 ,  H01S5/341 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4087 ,  H01S5/423

Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

公开(公告)号：US09671089B2

公开(公告)日：2017-06-06

申请号：US14380931

申请日：2013-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Uwe Strauβ

IPC: F21K99/00 ,  G02B5/02 ,  G02B5/136 ,  F21V13/14 ,  F21V7/05 ,  F21V9/16 ,  F21V7/22 ,  H01L33/44 ,  H01L33/50 ,  F21Y115/30 ,  F21Y115/10

CPC classification number: F21V13/14 ,  F21S41/16 ,  F21V7/05 ,  F21V7/22 ,  F21V9/30 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B5/0242 ,  G02B5/0289 ,  G02B5/0294 ,  G02B5/136 ,  H01L33/44 ,  H01L33/507 ,  H01L2933/0091

Abstract: A conversion element (10) is specified, comprising a scattering layer (12), a reflection layer (14), and a conversion layer (16) arranged between the scattering layer (12) and the reflection layer (14). The scattering layer (12) is designed to transmit a first portion (20) of a primary radiation (18) impinging on it from a side facing away from the conversion layer (16) into the conversion layer (16), and to scatter a second portion (22) of the primary radiation (18) impinging on it towards that side of the scattering layer (12) which faces away from the conversion layer (16). The conversion layer (16) comprises at least one conversion means (25) which is designed to convert at least part of the first portion of the primary radiation (18) into a second radiation (19) having a higher wavelength different from the primary radiation (18). The reflection layer (14) has a reflective effect at least with regard to the second radiation (19).

公开(公告)号：US09373937B2

公开(公告)日：2016-06-21

申请号：US14430685

申请日：2013-09-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Uwe Strauβ ,  Teresa Wurm ,  Adrian Stefan Avramescu ,  Georg Brüderl ,  Christoph Eichler ,  Sven Gerhard

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/30 ,  H01S5/343 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/2031 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031

Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.

Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。