公开(公告)号：US11335821B2

公开(公告)日：2022-05-17

申请号：US16863771

申请日：2020-04-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Mamoru Iesaka ,  Woon Il Choi ,  Sohei Manabe

IPC: H01L31/028 ,  H01L27/146

Abstract: Low noise silicon-germanium (SiGe) image sensor. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor substrate. The photodiodes of an individual pixel are configured to receive an incoming light through an illuminated surface of the semiconductor substrate. The semiconductor substrate includes a first layer of semiconductor material having silicon (Si); and a second layer of semiconductor material having silicon germanium (Si1-xGex). A concentration x of Ge changes gradually through at least a portion of thickness of the second layer. Each photodiode includes a first doped region extending through the first layer of semiconductor material and the second layer of semiconductor material; and a second doped region extending through the first layer of semiconductor material and the second layer of semiconductor material.

公开(公告)号：US11211421B2

公开(公告)日：2021-12-28

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: G01S17/89 ,  H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US11196950B2

公开(公告)日：2021-12-07

申请号：US16506693

申请日：2019-07-09

Applicant: OmniVision Technologies, Inc.

Inventor： Keiji Mabuchi ,  Sohei Manabe ,  Lindsay Grant

IPC: H04N5/357 ,  H04N5/374 ,  H04N5/369 ,  H04N5/361 ,  H04N5/3745 ,  H04N5/378

Abstract: An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.

公开(公告)号：US11095842B2

公开(公告)日：2021-08-17

申请号：US16523850

申请日：2019-07-26

Applicant: OmniVision Technologies, Inc.

Inventor： Keiji Mabuchi ,  Sohei Manabe ,  Lindsay Grant

IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/378 ,  H04N5/357

Abstract: An image sensor has an array of pixel blocks, and each pixel block having associated shutter transistors with each coupled to transfer an image signal comprising a charge dependent on light exposure of a selected pixel onto an image storage capacitor of a plurality of image storage capacitors associated with the pixel block, the image storage capacitors of the pixel block configured to be read through a differential amplifier into an analog to digital converter. The differential amplifier of each pixel block receives a second input from a single reset-sampling capacitor associated with the pixel block. The single reset-sampling capacitor is loaded when the pixels of the pixel block are reset.

公开(公告)号：US20200235158A1

公开(公告)日：2020-07-23

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US20160181297A1

公开(公告)日：2016-06-23

申请号：US15059196

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管和第二光电二极管。 第一光电二极管包括第一掺杂区域，第一轻掺杂区域和设置在第一掺杂区域和第一轻掺杂区域之间的第一高掺杂区域。 设置在其中的第二光电二极管的第二全阱容量基本上等于第一光电二极管的第一全阱容量。 第二光电二极管包括第二掺杂区域，第二轻掺杂区域和设置在第二掺杂区域和第二轻掺杂区域之间的第二高掺杂区域。 第一光圈分光器设置在第二光电二极管的上方，以将由第二光电二极管接收的图像光限制为小于由第一光电二极管接收的第一数量的图像光的第二量。

公开(公告)号：US20150333099A1

公开(公告)日：2015-11-19

申请号：US14280880

申请日：2014-05-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14647 ,  H04N5/37457

Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The first microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.

Abstract translation: 图像传感器像素包括第一光电二极管，第二光电二极管，第一微透镜，第二微透镜和滤光器。 第一和第二光电二极管彼此相邻设置在半导体材料中。 第一光电二极管具有基本上等于第二光电二极管的第二满阱容量的第一全阱容量。 第一微透镜设置在第一光电二极管的上方，第二微透镜设置在第二光电二极管的上方。 第一微透镜基本上与第一微透镜相同。 滤光器设置在第二微透镜和第二光电二极管之间以减小入射在第二光电二极管上的图像光的强度。 滤光器基本上不影响朝向第一光电二极管的图像光。

公开(公告)号：US09160958B2

公开(公告)日：2015-10-13

申请号：US14133127

申请日：2013-12-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Jeong-Ho Lyu

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14641 ,  H04N5/3559 ,  H04N5/3598 ,  H04N5/37455 ,  H04N5/37457

Abstract: An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.

Abstract translation: 图像传感器包括光敏区域，传输晶体管和一个或多个共用电荷 - 电压机构。 读出图像传感器的方法包括：使第一传输晶体管能够将光电荷从第一光敏区域转移到共享的电荷 - 电压机构。 该方法还包括不超过部分地允许第二传输晶体管部分地接通第二传输晶体管以增加共享的电荷 - 电压机构的电容，同时光电荷从第一感光区域传送到共享的 充电电压机制。

公开(公告)号：US20150236058A1

公开(公告)日：2015-08-20

申请号：US14704493

申请日：2015-05-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。 设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管传输到浮动扩散。

公开(公告)号：US20210203865A1

公开(公告)日：2021-07-01

申请号：US17204786

申请日：2021-03-17

Applicant: OmniVision Technologies Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: H04N5/353 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378

Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal. A first storage gate is coupled to the first transfer gate to receive the image charge from the first transfer gate, and a first output gate is coupled to the first storage gate to receive the image charge from the first storage gate. A first capacitor is coupled to the first output gate to store the image charge.