公开(公告)号：US07247504B2

公开(公告)日：2007-07-24

申请号：US11024873

申请日：2004-12-30

申请人： Osamu Matsuura ,  Kenji Maruyama ,  Kazuaki Takai

发明人： Osamu Matsuura ,  Kenji Maruyama ,  Kazuaki Takai

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56

摘要： A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

摘要翻译： 铁电电容器包括一对电极，并且至少一个铁电体保持在该对电极之间，其中铁电体包括由原子力显微镜确定的表面粗糙度（RMS）为10nm以上的第一铁电层; 并且第二铁电层被布置为与第一铁电层相邻并且具有5nm或更小的RMS。 一种工艺通过在等于或高于第一铁电层承受铁电晶体结构的结晶温度的温度下，在一对电极中的一个或其上方形成第一铁电层来制造这种铁电电容器，并且形成第二铁电层 铁电层在第一铁电体层上的温度低于第二铁电层呈铁电晶体结构的结晶温度。

公开(公告)号：US20050242381A1

公开(公告)日：2005-11-03

申请号：US11024873

申请日：2004-12-30

申请人： Osamu Matsuura ,  Kenji Maruyama ,  Kazuaki Takai

发明人： Osamu Matsuura ,  Kenji Maruyama ,  Kazuaki Takai

IPC分类号： C23C14/08 ,  C23C16/40 ,  G01Q30/04 ,  G01Q30/10 ,  G01Q70/04 ,  G01Q70/14 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56

摘要： A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

公开(公告)号：US06855974B2

公开(公告)日：2005-02-15

申请号：US10743814

申请日：2003-12-24

申请人： Osamu Matsuura ,  Kenji Maruyama ,  Kazuaki Takai

发明人： Osamu Matsuura ,  Kenji Maruyama ,  Kazuaki Takai

IPC分类号： C23C14/08 ,  C23C16/40 ,  G01Q30/04 ,  G01Q30/10 ,  G01Q70/04 ,  G01Q70/14 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L31/062

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56

摘要： A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

摘要翻译： 铁电电容器包括一对电极，并且至少一个铁电体保持在该对电极之间，其中铁电体包括由原子力显微镜确定的表面粗糙度（RMS）为10nm以上的第一铁电层; 并且第二铁电层被布置为与第一铁电层相邻并且具有5nm或更小的RMS。 一种工艺通过在等于或高于第一铁电层承受铁电晶体结构的结晶温度的温度下，在一对电极中的一个或其上方形成第一铁电层来制造这种铁电电容器，并且形成第二铁电层 铁电层在第一铁电体层上的温度低于第二铁电层呈铁电晶体结构的结晶温度。

公开(公告)号：US06812510B2

公开(公告)日：2004-11-02

申请号：US10369720

申请日：2003-02-21

申请人： Yoshimasa Horii ,  Osamu Matsuura ,  Katsuyoshi Matsuura ,  Kazuaki Takai

发明人： Yoshimasa Horii ,  Osamu Matsuura ,  Katsuyoshi Matsuura ,  Kazuaki Takai

IPC分类号： H01L2976

CPC分类号： H01L29/516 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691 ,  H01L28/55

摘要： A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×1018 cm−3 or less, and the pair of electrodes is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. A process for manufacturing a ferroelectric capacitor having the steps of forming a ferroelectric layer on one of a pair of electrodes; heating the layer at a temperature higher than when forming the layer, and to form the other electrode on the ferroelectric layer, or the steps of forming a ferroelectric layer on one of a pair of electrodes; forming the other electrode on the ferroelectric layer; and heating the layer at a temperature higher than when forming the layer to form the other electrode on the ferroelectric layer, to control carbon atoms of the ferroelectric layer to be 5×1018 cm−3 or less.

摘要翻译： 具有铁电体层和铁电层含有5×10 18 cm -3以下的碳原子或碳原子的铁电体层和一对电极的铁电电容器和该电极对由MOCVD（金属有机化学 气相沉积）法。 一种制造铁电电容器的方法，该方法具有以下步骤：在一对电极之一上形成铁电层; 在高于形成层的温度下加热层，并在铁电层上形成另一个电极，或在一对电极之一上形成铁电层的步骤; 在铁电层上形成另一电极; 并且在比形成该层高的温度下加热该层，以在铁电层上形成另一个电极，以控制铁电层的碳原子为5×10 18 cm -3以下。

公开(公告)号：US06906367B2

公开(公告)日：2005-06-14

申请号：US10635648

申请日：2003-08-07

申请人： Osamu Matsuura ,  Kenji Maruyama

发明人： Osamu Matsuura ,  Kenji Maruyama

IPC分类号： H01L41/187 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56

摘要： After a MOS transistor is formed on a semiconductor substrate, an Ir film, LT film, PZT film, and IrO2 film are formed in this order on the entire surface. Although the LT film itself is not a ferroelectric film, a ferroelectric film is formed by a stacked film of the LT film and PZT film. In a ferroelectric capacitor having this ferroelectric film, the LT film does not contain Pb, so the alignment can be readily controlled during the film formation. This raises the alignment of the LT film. The crystal structure of the LT film is a perovskite structure similar to that of the PZT film. Since the PZT film is formed on this LT film, the alignment of the LT film is taken over when the PZT film is grown. This raises the alignment of the PZT film.

摘要翻译： 在半导体衬底上形成MOS晶体管之后，在整个表面上依次形成Ir膜，LT膜，PZT膜和IrO 2膜。 虽然LT膜本身不是铁电体膜，但是由LT膜和PZT膜的叠层膜形成铁电体膜。 在具有这种铁电体膜的铁电电容器中，LT膜不含有Pb，因此可以容易地在成膜时控制取向。 这提高了LT膜的对准。 LT膜的晶体结构是类似于PZT膜的钙钛矿结构。 由于在该LT膜上形成PZT膜，所以当PZT膜生长时，LT膜被取向。 这提高了PZT膜的对准。

公开(公告)号：US20070040196A1

公开(公告)日：2007-02-22

申请号：US11504115

申请日：2006-08-15

申请人： Osamu Matsuura

发明人： Osamu Matsuura

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes the steps of forming a contact plug in an insulation film so as to be connected to an element on a semiconductor substrate, applying PLA pretreatment to the insulation film in an NH3 atmosphere, forming a Ti film over the contact plug, nitriding the Ti film to form a TiN film as a part of a lower electrode of a capacitor, and forming a metal film as another part of the lower electrode of the capacitor on the titanium nitride film.

摘要翻译： 公开了一种半导体器件的制造方法。 该制造方法包括以下步骤：在绝缘膜上形成接触插塞，以连接到半导体衬底上的元件，在NH 3气氛中对绝缘膜施加PLA预处理，形成 Ti膜，将Ti膜氮化，形成作为电容器的下部电极的一部分的TiN膜，形成作为氮化钛膜上的电容器的下部电极的另一部分的金属膜。

公开(公告)号：US07101171B2

公开(公告)日：2006-09-05

申请号：US10311853

申请日：2002-04-26

申请人： Osamu Matsuura ,  Kazuhiro Miura ,  Hideaki Yoshimura ,  Shinsuke Kishi

发明人： Osamu Matsuura ,  Kazuhiro Miura ,  Hideaki Yoshimura ,  Shinsuke Kishi

IPC分类号： B29D11/00

CPC分类号： B29C45/263 ,  B29C45/34 ,  B29C2045/2648 ,  B29L2017/005 ,  Y10S425/81

摘要： A resin ring 51 is press-fitted into a grove portion formed in an inner periphery surface of an interlocking ring 4. The resin ring 51 is made of a hard resin such as Teflon. The resin ring 51 as a low frictional lubricative member is interposed between the interlock ring 4 and an outer periphery ring 3. In addition, a cavity 6 as a closed space is formed between a stamper 1b as a molding surface of a fixed side mirror 1 and a mirror side molding surface 2b of a moving side mirror 2. While the moving side mirror 2 is being press-contracted to the fixed side mirror 1, when a resin material is filled into the cavity 6, the outer periphery ring 3 is slidably held in a groove of the moving side mirror 2 with predetermined clearances. In the interlock ring 4, a plurality of openings 4a which relieve gas produced by the disc resin material filled into the cavity 6 are formed.

摘要翻译： 将树脂环51压配合到形成在互锁环4的内周面上的凹槽部分中。 树脂环51由特氟隆等硬质树脂构成。 作为低摩擦润滑构件的树脂环51插入在互锁环4和外周环3之间。 此外，在作为固定侧反射镜1的成型面的压模1b和移动侧反射镜2的镜侧成型面2b之间，形成作为封闭空间的空腔6。 当移动侧反射镜2被压缩到固定侧反射镜1时，当树脂材料被填充到空腔6中时，外周环3以预定的间隙可滑动地保持在移动侧反射镜2的凹槽中。 在互锁环4中，形成有多个开口部4a，其释放由填充到空腔6中的盘状树脂材料产生的气体。

公开(公告)号：US06866500B2

公开(公告)日：2005-03-15

申请号：US10267640

申请日：2002-10-10

申请人： Shinsuke Kishi ,  Kazuhiro Miura ,  Osamu Matsuura

发明人： Shinsuke Kishi ,  Kazuhiro Miura ,  Osamu Matsuura

IPC分类号： B29C45/17 ,  B29C45/64

CPC分类号： B29C45/1761

摘要： A clamping apparatus includes a fixed die plate (21) fixed to a frame (26), four tie rods (23), (24) extending in the horizontal direction and respectively fixed to the fixed die plate (21) in parallel to each other, a moving die plate (22) supported to the four tie rods (23), (24) so that the moving die plate (22) can slide freely and a clamping mechanism for moving the moving die plate (22) forward and backward along the four tie rods (23), (24). This clamping apparatus comprises a guide mechanism (25) for downwardly or upwardly supporting the moving die plate (22) and which allows the moving die plate (22) to move in the opposite direction of gravitation.

摘要翻译： 夹紧装置包括固定在框架（26）上的固定模板（21），在水平方向上延伸并分别固定在固定模板（21）上的四个拉杆（23），（24） ，移动的模板（22），其支撑在四个拉杆（23），（24）上，使得移动的模板（22）能够自由滑动;以及夹紧机构，用于沿着沿着移动的模板（22）向前和向后移动 四个拉杆（23），（24）。 该夹紧装置包括用于向下或向上支撑移动的模板（22）的导向机构（25），并允许移动的模板（22）在相反的重力方向上移动。

公开(公告)号：US4807925A

公开(公告)日：1989-02-28

申请号：US13568

申请日：1987-02-11

申请人： Toshinori Sakamoto ,  Osamu Matsuura

发明人： Toshinori Sakamoto ,  Osamu Matsuura

IPC分类号： B62D23/00 ,  B62D25/04 ,  B62D25/00

CPC分类号： B62D25/04 ,  B62D23/005

摘要： The front pillar as a vehicle body rigidity member is constructed with a first front pillar arranged on the front side of the vehicle body and a second front pillar arranged on the rear side thereof. This construction enables the front pillar to meet with requirements contrary to each other, that is, for an improvement in a rigidity, particularly a flexural rigidity and for widening the front field of vision.

摘要翻译： 作为车体刚性构件的前柱构成为具有设置在车身前侧的第一前柱和配置在车身后侧的第二前柱。 这种结构使得前柱能够满足彼此相反的要求，即，用于提高刚度，特别是弯曲刚度和用于扩大前视野。

公开(公告)号：US07657660B2

公开(公告)日：2010-02-02

申请号：US11701384

申请日：2007-02-02

申请人： Kazuya Taniguchi ,  Osamu Matsuura ,  Kazuo Ohno

发明人： Kazuya Taniguchi ,  Osamu Matsuura ,  Kazuo Ohno

IPC分类号： G06F3/00

CPC分类号： H03K19/00315 ,  H03K19/017509

摘要： The present invention provides an input/output device capable of bringing a per-unit input/output circuit into a simple configuration without impairing reliability even when logic levels opposite in polarity are outputted between input/output devices made conductive to the outside. The input/output device is equipped with one reference port Pk selected from a port group which inputs and outputs signals, target ports Pt selected from other than the reference port of the port group, and a conduction detector which detects that conduction is made between input/output terminals for the reference port Pk and the target ports Pt.

摘要翻译： 本发明提供了一种能够将单位输入/输出电路简单配置而不损害可靠性的输入/输出装置，即使在与外部导通的输入/输出装置之间输出极性相反的逻辑电平时也是如此。 输入/输出装置配备有从端口组中选择的一个参考端口Pk，其输入和输出信号，从端口组的参考端口以外选择的目标端口Pt以及检测在输入之间进行导通的导电检测器 /参考端口Pk和目标端口Pt的输出端子。