Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins
and methods for making said resins
    2.
    发明授权
    Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins 失效
    部分聚合的二乙烯基硅氧烷连接的双苯并环丁烯树脂和制备所述树脂的方法

    公开(公告)号:US5854302A

    公开(公告)日:1998-12-29

    申请号:US224203

    申请日:1994-04-14

    CPC分类号: G03F7/0757 C09D4/00

    摘要: A process for forming a partially polymerized DVS resin comprising heating DVS monomer (1,3-bis(2-bicyclo�4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyldisiloxane) in a solvent at a concentration of DVS monomer in the solvent such that: (a) the DVS resin, when applied and polymerized in a thin layer on a solid substrate does not craze; and (b) the DVS resin, is rendered photocurable by the addition of at least one photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation and the film retention upon development with a solvent is at least 50 percent. The DVS resin may be used as an interlayer dielectric to fabricate thin film multichip modules.

    摘要翻译: 一种形成部分聚合的DVS树脂的方法,包括加热DVS单体(1,3-双(2-双环[4.2.0]辛-1,3,5-三烯-3-基乙烯基)-1,1,3,3 - 四甲基二硅氧烷)溶于溶剂中的DVS单体浓度的溶剂中,使得:(a)DVS树脂在固体基材上薄层涂布和聚合时不会发热; 和(b)DVS树脂通过添加至少一种光敏剂使其变得光固化,其量足以将混合物暴露于光子辐射时将混合物转化为有机不溶性固体,并在用溶剂显影时保留膜 至少有50%。 DVS树脂可以用作层间电介质以制造薄膜多芯片模块。

    Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
    5.
    发明授权
    Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants 失效
    硼酸酯,含硼掺杂剂,以及制造含硼掺杂剂的方法

    公开(公告)号:US08629294B2

    公开(公告)日:2014-01-14

    申请号:US13217597

    申请日:2011-08-25

    IPC分类号: C07F5/04

    CPC分类号: C07F7/04

    摘要: Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants are provided herein. In an embodiment, a borate ester comprises boron and silicon wherein the boron is linked to the silicon by alkyl groups that are bonded via ester bonds with both the boron and the silicon. A method of fabricating a boron-comprising dopant comprises providing a borate and transesterifying the borate using a polyol-substituted silicon monomer.

    摘要翻译: 本文提供硼酸酯,含硼掺杂剂和制备含硼掺杂剂的方法。 在一个实施方案中,硼酸酯包括硼和硅,其中硼通过与硼和硅两者通过酯键键合的烷基连接到硅。 制备含硼掺杂剂的方法包括使用多元醇取代的硅单体提供硼酸盐并使硼酸酯酯交换。

    Stripping method
    6.
    发明授权
    Stripping method 失效
    剥线方法

    公开(公告)号:US06878500B2

    公开(公告)日:2005-04-12

    申请号:US10408044

    申请日:2003-04-05

    IPC分类号: G03F7/42 G03F7/30

    CPC分类号: G03F7/422 G03F7/426

    摘要: Compositions and methods for the removal of patterned photodefinable materials, such as photoresists and/or photoimageable dielectric materials, from substrates are provided. Such compositions and methods are useful in the manufacture of electronic devices. Methods of reworking electronic device substrates by removing patterned photodefinable material from an underlying organic film are also provided.

    摘要翻译: 提供了用于从衬底去除图案化的光致定影材料(例如光刻胶和/或可光成像的电介质材料)的组合物和方法。 这样的组合物和方法在电子设备的制造中是有用的。 还提供了通过从下面的有机膜去除图案化的光可定义材料来重新加工电子器件衬底的方法。

    Compatibilization treatment
    7.
    发明授权
    Compatibilization treatment 失效
    相容处理

    公开(公告)号:US06610609B2

    公开(公告)日:2003-08-26

    申请号:US09847741

    申请日:2001-05-02

    IPC分类号: H01L21302

    摘要: Disclosed are compositions and methods for improving compatibility of imaging layers with dielectric layers. Also disclosed are methods of reducing or eliminating poisoning of photoresists during electronic device manufacture.

    摘要翻译: 公开了用于提高成像层与电介质层的相容性的组合物和方法。 还公开了在电子设备制造期间减少或消除光致抗蚀剂中毒的方法。