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公开(公告)号：US10685997B2
公开(公告)日：2020-06-16
申请号：US16431302
申请日：2019-06-04
Inventor： Makoto Ikuma , Hiroyuki Amikawa , Takayasu Kito , Shinichi Ogita , Junichi Matsuo , Yasuyuki Endoh , Katsumi Tokuyama , Tetsuya Abe
IPC: H04N5/378 , H01L27/146 , H01L27/142 , H04N5/225 , H04N5/232 , H04N5/235 , H04N5/363 , H04N17/00 , H04N5/355 , H04N5/353 , B60R11/04 , B60R11/00
Abstract: A solid-state imaging apparatus includes a pixel array, a column processor, and a test signal generating circuit that generates a first digital signal for testing purposes. The test signal generating circuit generates the first digital signal within one horizontal scanning period. The column processor converts a first analog signal, that is converted from the first digital signal, to a second digital signal within the one horizontal scanning period.
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公开(公告)号：US12094895B2
公开(公告)日：2024-09-17
申请号：US17838911
申请日：2022-06-13
Inventor： Junji Hirase , Yoshihiro Sato , Yasuyuki Endoh , Hiroyuki Amikawa
IPC: H01L27/146 , H01L27/02 , H04N25/57 , H04N25/75 , H04N25/76
CPC classification number: H01L27/1461 , H01L27/0288 , H01L27/14603 , H01L27/14636 , H01L27/14643 , H04N25/57 , H04N25/75 , H04N25/76
Abstract: An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.
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公开(公告)号：US10742906B2
公开(公告)日：2020-08-11
申请号：US16059517
申请日：2018-08-09
Inventor： Makoto Ikuma , Takahiro Muroshima , Takayasu Kito , Hiroyuki Amikawa , Tetsuya Abe
IPC: H04N5/335 , H04N5/345 , H01L27/146 , H04N5/357 , H04N5/378 , H03M1/08 , H04N5/369 , H04N5/3745 , H03M1/56 , H03M1/12
Abstract: A solid-state imaging device includes: a pixel array unit in which a plurality of pixels are arranged in rows and columns; a plurality of column signal lines which are provided in one-to-one correspondence with pixel columns; a column processor including a plurality of column AD circuits provided in one-to-one correspondence with the plurality of column signal lines; a power supply variation detector which is connected to a power supply wire through which a power supply voltage is transmitted to each of the pixels, and which detects, in correspondence with pixel rows, power supply variation components attributed to variations in the power supply voltage; and a power supply variation corrector which corrects, for each of the pixel rows, a pixel signal detected by the column processor, using the power supply variation components detected by the power supply variation detector.
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Patent Agency Ranking
公开(公告)号：US11527560B2
公开(公告)日：2022-12-13
申请号：US17067151
申请日：2020-10-09
Inventor： Yuuko Tomekawa , Takahiro Koyanagi , Hiroyuki Amikawa , Yasuyuki Endoh
IPC: H01L27/146
Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.
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公开(公告)号：US10785430B2
公开(公告)日：2020-09-22
申请号：US16059485
申请日：2018-08-09
Inventor： Makoto Ikuma , Takahiro Muroshima , Takayasu Kito , Hiroyuki Amikawa , Tetsuya Abe
Abstract: A solid-state imaging device includes: a pixel including a photoelectric converter that generates a charge and a charge accumulator that converts the charge into a voltage; a controller that causes the pixel to perform exposure in a first exposure mode and convert the charge into the voltage with a first gain to output a first pixel signal, and causes the pixel to perform exposure in a second exposure mode and convert the charge into the voltage with a second gain to output a second pixel signal, the second exposure mode being shorter in exposure time than the first exposure mode, and the second gain being lower than the first gain; and a signal processor that synthesizes the second pixel signal after amplification and the first pixel signal.
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6.发明授权Solid-state imaging apparatus, method for driving the same, and imaging apparatus 有权固体摄像装置及其驱动方法以及摄像装置公开(公告)号：US09419052B2
公开(公告)日：2016-08-16
申请号：US14554038
申请日：2014-11-26
Inventor： Hiroyuki Amikawa , Masashi Murakami
IPC: H01L27/00 , H04N3/14 , H01L27/148 , H04N5/355 , H04N5/369 , H04N5/374 , H01L27/146
CPC classification number: H01L27/14831 , H01L27/14612 , H04N5/355 , H04N5/3698 , H04N5/3741
Abstract: A solid-state imaging apparatus includes a plurality of pixel cells arranged in a pixel array unit, a vertical signal line and a pixel power supply line each connected to a source electrode and a drain electrode of an amplifying transistor, a Pch transistor for supplying potential AVDD to the vertical signal line, a Pch transistor for supplying potential PBIAS_H higher than the potential AVDD to the vertical signal line, a Pch transistor for supplying the potential PBIAS_H to the pixel power supply line, wherein while the transfer transistor is turned ON and transfers signal charges photoelectrically converted by a photodiode to the floating diffusion portion, the Pch transistors are turned ON and the potential PBIAS_H is applied to the vertical signal line and the pixel power supply line.
Abstract translation: 固态成像装置包括排列在像素阵列单元中的多个像素单元，垂直信号线和每个连接到放大晶体管的源电极和漏电极的像素电源线，用于提供电位的Pch晶体管 对垂直信号线的AVDD，用于向垂直信号线提供高于电位AVDD的电位PBIAS_H的Pch晶体管，用于将电位PBIAS_H提供给像素电源线的Pch晶体管，其中当转移晶体管导通并转移时 信号电荷由光电二极管光电转换成浮动扩散部分，Pch晶体管导通，电位PBIAS_H施加到垂直信号线和像素电源线。
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公开(公告)号：US20190289238A1
公开(公告)日：2019-09-19
申请号：US16431302
申请日：2019-06-04
Inventor： Makoto IKUMA , Hiroyuki Amikawa , Takayasu Kito , Shinichi Ogita , Junichi Matsuo , Yasuyuki Endoh , Katsumi Tokuyama , Tetsuya Abe
Abstract: A solid-state imaging apparatus includes a pixel array, a column processor, and a test signal generating circuit that generates a first digital signal for testing purposes. The test signal generating circuit generates the first digital signal within one horizontal scanning period. The column processor converts a first analog signal, that is converted from the first digital signal, to a second digital signal within the one horizontal scanning period.
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公开(公告)号：US09549135B2
公开(公告)日：2017-01-17
申请号：US14858481
申请日：2015-09-18
Inventor： Takayasu Kito , Hiroyuki Amikawa , Masahiro Higuchi , Kenichi Origasa , Hiroshi Fujinaka
IPC: H04N5/374 , H04N5/3745 , H04N5/369 , H04N5/357 , H04N5/378
CPC classification number: H04N5/374 , H04N5/3577 , H04N5/3698 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging device includes: a plurality of unit cells each including at least one light receiving unit and an amplifying transistor which outputs an amplified signal corresponding to an amount of the signal charge photoelectrically converted by the light receiving unit; a plurality of vertical signal lines each for receiving an output signal from the amplifying transistor; a pixel power supply line for supplying a power supply voltage to the amplifying transistor; a plurality of constant current source transistors each connected to a different one of the vertical signal lines; and a bias circuit which controls an amount of current to be supplied to each of the constant current source transistors, based on a variation in the power supply voltage.
Abstract translation: 固态成像装置包括：多个单位电池，每个单元电池包括至少一个光接收单元和放大晶体管，其输出对应于由光接收单元光电转换的信号电荷的量的放大信号; 多个垂直信号线，各自用于接收来自放大晶体管的输出信号; 用于向放大晶体管提供电源电压的像素电源线; 多个恒流源晶体管，每个连接到所述垂直信号线中的不同的一个; 以及偏置电路，其基于电源电压的变化来控制要提供给每个恒流源晶体管的电流量。
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