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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150179741A1

    公开(公告)日：2015-06-25

    申请号：US14636149

    申请日：2015-03-02

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： HIDEKAZU UMEDA ,  KAZUHIRO KAIBARA ,  SATOSHI TAMURA

    IPC: H01L29/10 ,  H01L29/06 ,  H01L29/20 ,  H01L29/78

    CPC classification number: H01L29/78 ,  H01L29/06 ,  H01L29/0661 ,  H01L29/10 ,  H01L29/1066 ,  H01L29/1083 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/7786

    Abstract: A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of AlN, a 2 μm-thick undoped GaN layer, and 20 nm-thick undoped AlGaN having an Al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped AlGaN layer. Further, in the undoped GaN layer and the undoped AlGaN layer immediately below a gate wire, a high resistance region, the resistance of which is increased by for example, ion implantation with Ar or the like, is formed, and a boundary between the high resistance region and an element region is positioned immediately below the gate wire.

    Abstract translation: 氮化物半导体器件中的寄生电容和漏电流减小。 例如，将AlN，2μm厚的未掺杂的GaN层和Al组成比为20％的20nm厚的未掺杂的AlGaN构成的100nm厚的缓冲层依次外延生长在例如 由硅制成的衬底以及源电极和漏电极形成为与未掺杂的AlGaN层欧姆接触。 此外，在栅极布线正下方的未掺杂的GaN层和未掺杂的AlGaN层中，形成高电阻区域，其电阻例如通过Ar等的离子注入而增加，并且高电阻区域 电阻区域和元件区域位于栅极线的正下方。

    SEMICONDUCTOR MODULE
    3.
    发明公开
    SEMICONDUCTOR MODULE 审中-公开

    公开(公告)号：US20230163055A1

    公开(公告)日：2023-05-25

    申请号：US17906619

    申请日：2021-03-18

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： JUNICHI KIMURA ,  KAZUHIRO KAIBARA ,  NORIMITSU HOZUMI ,  KOUTARO DEGUCHI ,  ATSUSHI MATSUMOTO

    IPC: H01L23/498 ,  H01L23/495 ,  H01L23/00

    CPC classification number: H01L23/49811 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L2224/32225 ,  H01L23/49568

    Abstract: A semiconductor module includes: a first switch element; a second switch element; a first conductor that is joined to the source electrode of the first switch element, the first switch element is placed on the first conductor; a second conductor that is joined to the source electrode of the second switch element, the second switch element is placed on the second conductor; a positive electrode conductor connected to the drain electrode of the first switch element; an output conductor connected to the first conductor and the drain electrode of the second switch element; a negative electrode conductor connected to the second conductor; a first control conductor connected to the gate electrode of the first switch element; a second control conductor connected to the gate electrode of the second switch element; a first voltage detection terminal provided on the first conductor; a second voltage detection terminal provided on the second conductor; and an exterior resin part having a polyhedral shape. The first voltage detection terminal and the second voltage detection terminal protrude from different exterior surfaces of the exterior resin part.

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