公开(公告)号：US20190386165A1

公开(公告)日：2019-12-19

申请号：US16516233

申请日：2019-07-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： RYOSUKE KIKUCHI ,  TORU NAKAMURA ,  TAKAHIRO KURABUCHI ,  KAZUHITO HATO ,  FUMIYASU OBA ,  YU KUMAGAI

IPC: H01L31/0725 ,  H01L31/036 ,  H01L31/0224

Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.

公开(公告)号：US20220216439A1

公开(公告)日：2022-07-07

申请号：US17700952

申请日：2022-03-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MAKI HIRAOKA ,  RYUUSUKE UCHIDA ,  TORU NAKAMURA

IPC: H01L51/42 ,  H01L51/00 ,  C07F13/00

Abstract: A photoelectric conversion film according to the present disclosure includes a perovskite compound including a monovalent formamidinium cation, a Pb cation and an iodide ion, and a substance having Hansen solubility parameters satisfying a dispersion term δD of 20±0.5 MPa0.5, a polar term δP of 18±1 MPa0.5 and a hydrogen bonding term δH of 11±2 MPa0.5.

公开(公告)号：US20210408305A1

公开(公告)日：2021-12-30

申请号：US17474682

申请日：2021-09-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： RYOSUKE KIKUCHI ,  TORU NAKAMURA ,  KOKI UENO ,  TAKAHIRO KURABUCHI ,  YASUSHI KANEKO ,  KAZUHITO HATO ,  FUMIYASU OBA ,  YU KUMAGAI

IPC: H01L31/032 ,  H01L31/0725 ,  H01L31/18

Abstract: An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.

公开(公告)号：US20240090309A1

公开(公告)日：2024-03-14

申请号：US18505157

申请日：2023-11-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TORU NAKAMURA ,  MAKI HIRAOKA ,  HIROSHI HIGUCHI

IPC: H10K85/10 ,  C08G73/02 ,  H10K85/50 ,  H10K85/60

CPC classification number: H10K85/111 ,  C08G73/02 ,  H10K85/50 ,  H10K85/658 ,  H10K30/86

Abstract: A semiconductor material of the present disclosure is represented by formula (I) below, in which R1, R2, and R3 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, R4 represents an aryl group, an amino group, a hydroxy group, or an alkoxy group, and n represents an integer greater than or equal to 2; and a photoelectric conversion element of the present disclosure includes a first electrode, a photoelectric conversion layer, a hole transport layer, and a second electrode in this order, in which the hole transport layer includes the semiconductor material of the present disclosure:

公开(公告)号：US20190305154A1

公开(公告)日：2019-10-03

申请号：US16223885

申请日：2018-12-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KOKI UENO ,  RYOSUKE KIKUCHI ,  TORU NAKAMURA ,  TAKAHIRO KURABUCHI ,  YASUSHI KANEKO ,  KAZUHITO HATO ,  FUMIYASU OBA ,  YU KUMAGAI

IPC: H01L31/032 ,  C25B1/04 ,  C25B1/00 ,  C01B21/06

Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.

公开(公告)号：US20220077411A1

公开(公告)日：2022-03-10

申请号：US17525856

申请日：2021-11-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MAKI HIRAOKA ,  TORU NAKAMURA ,  RYUUSUKE UCHIDA ,  AKIO MATSUSHITA

IPC: H01L51/44 ,  H01G9/20 ,  H01L51/00

Abstract: The present disclosure provides a photoelectric conversion film having a high light absorption ability and a long carrier life. A photoelectric conversion film of the present disclosure includes a perovskite compound including a monovalent formamidinium cation, a Pb cation and an iodide ion. The film thickness of the photoelectric conversion film is greater than or equal to 1 μm. In the photoelectric conversion film, the ratio of root mean square roughness Rq to the film thickness is less than or equal to 0.13.

公开(公告)号：US20170088975A1

公开(公告)日：2017-03-30

申请号：US15196119

申请日：2016-06-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： RYOSUKE KIKUCHI ,  TORU NAKAMURA ,  SATORU TAMURA ,  HIDEAKI MURASE ,  KAZUHITO HATO

IPC: C30B25/06 ,  C30B29/68 ,  C30B29/16 ,  C25B1/04 ,  H01G9/20 ,  C25B9/06 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  C30B29/38 ,  C25B11/04

CPC classification number: C30B25/06 ,  B01J23/20 ,  B01J35/004 ,  C23C14/0036 ,  C23C14/0042 ,  C23C14/0676 ,  C23C14/083 ,  C23C14/3414 ,  C25B1/04 ,  C25B9/06 ,  C25B11/0405 ,  C25B11/0415 ,  C25B11/0447 ,  C30B23/063 ,  C30B29/16 ,  C30B29/38 ,  C30B29/68 ,  H01G9/2031 ,  Y02E60/364 ,  Y02E60/366

Abstract: To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.