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1.发明申请公开(公告)号：US20190040536A1
公开(公告)日：2019-02-07
申请号：US16044416
申请日：2018-07-24
Inventor： HIDEAKI MURASE , MISA YOROZUYA
Abstract: The method for manufacturing a photosemiconductor according to the present disclosure includes treating a metal base material containing at least one kind of transition metal with a plasma under a pressure lower than atmospheric pressure and at a temperature lower than a volatilization temperature of the transition metal under an atmosphere at the pressure to provide the photosemiconductor containing the transition metal and a nitrogen element from at least a part of the metal base material. Here, the plasma is generated by applying a high-frequency voltage at a frequency in a range of not less than 30 MHz and not more than 300 MHz to a gas between a first electrode and a second electrode, and the gas is any one of: (i) a nitrogen gas; (ii) a gaseous mixture consisting of a nitrogen gas and an oxygen gas; (iii) a gaseous mixture consisting of a nitrogen gas and a rare gas; and (iv) a gaseous mixture consisting of a nitrogen gas, an oxygen gas, and a rare gas.
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2.发明申请公开(公告)号：US20230006235A1
公开(公告)日：2023-01-05
申请号：US17901874
申请日：2022-09-02
Inventor： YUICHI MIKAMI , KOSUKE NUNOO , TAKEHITO GOTO , HIROSHI ASANO , TAKESHI TERAYAMA , TOMOHIRO KUROHA , HIDEAKI MURASE
IPC: H01M8/1253 , H01M8/1004 , H01M8/126 , C01G25/00
Abstract: An electrode material of the present disclosure is an electrode material that includes a compound represented by the chemical formula BaZr1-x-yMxCoyO3-δ. M is In or Yb, and the chemical formula satisfies 0
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公开(公告)号：US20210408569A1
公开(公告)日：2021-12-30
申请号：US17474502
申请日：2021-09-14
Inventor： YUICHI MIKAMI , TAKEHITO GOTO , SHIGENORI ONUMA , HIDEAKI MURASE , TOMOHIRO KUROHA
IPC: H01M8/1253 , H01M8/1004
Abstract: A membrane electrode assembly according to the present disclosure includes an electrolyte membrane containing a proton conductive oxide and an electrode containing a lanthanum strontium cobalt iron composite oxide located on the electrolyte membrane, wherein, in the electrode, the ratio of the number of moles of cobalt to the sum of the number of moles of cobalt and the number of moles of iron is 0.35 or more and 0.6 or less.
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公开(公告)号：US20210346879A1
公开(公告)日：2021-11-11
申请号：US17381137
申请日：2021-07-20
Inventor： HIROYUKI KOSHIKAWA , HIDEAKI MURASE , TAKAO HAYASHI , KOSUKE NAKAJIMA , SEIGO SHIRAISHI
Abstract: A layered double hydroxide of the present disclosure includes two or more transition metals and a chelating agent. The layered double hydroxide has an average particle diameter of 10 nm or less.
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公开(公告)号：US20240052505A1
公开(公告)日：2024-02-15
申请号：US18491746
申请日：2023-10-20
Inventor： KOICHIRO ASAZAWA , HIROSHI SHIRATAKI , HIDEAKI MURASE , TAKAO HAYASHI , KOICHI KOGA
IPC: C25B11/061 , C25B1/04 , C25B9/23 , C25B11/032 , C25B11/052 , C25B11/075
CPC classification number: C25B11/061 , C25B1/04 , C25B9/23 , C25B11/032 , C25B11/052 , C25B11/075
Abstract: A water electrolysis cell includes an anode, a cathode, and an anion-exchange membrane disposed between the anode and the cathode. The anode includes a catalyst layer disposed on the anion-exchange membrane and an anode gas diffusion layer disposed on the catalyst layer. The anode gas diffusion layer includes metal fiber. In the metal fiber, a section constituting a surface of the metal fiber is composed of nickel.
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Patent Agency Ranking
公开(公告)号：US20170088975A1
公开(公告)日：2017-03-30
申请号：US15196119
申请日：2016-06-29
Inventor： RYOSUKE KIKUCHI , TORU NAKAMURA , SATORU TAMURA , HIDEAKI MURASE , KAZUHITO HATO
IPC: C30B25/06 , C30B29/68 , C30B29/16 , C25B1/04 , H01G9/20 , C25B9/06 , C23C14/00 , C23C14/08 , C23C14/34 , C30B29/38 , C25B11/04
CPC classification number: C30B25/06 , B01J23/20 , B01J35/004 , C23C14/0036 , C23C14/0042 , C23C14/0676 , C23C14/083 , C23C14/3414 , C25B1/04 , C25B9/06 , C25B11/0405 , C25B11/0415 , C25B11/0447 , C30B23/063 , C30B29/16 , C30B29/38 , C30B29/68 , H01G9/2031 , Y02E60/364 , Y02E60/366
Abstract: To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.
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公开(公告)号：US20150364681A1
公开(公告)日：2015-12-17
申请号：US14726637
申请日：2015-06-01
Inventor： HIDEAKI MURASE , YOSHIO KAWASHIMA
IPC: H01L45/00
CPC classification number: H01L45/1233 , H01L45/08 , H01L45/12 , H01L45/146 , H01L45/16 , H01L45/1675
Abstract: A nonvolatile storage device includes a first conductive layer disposed on a substrate, a contact plug including a conductive material and disposed on the first conductive layer, a variable resistance element covering the upper surface of the contact plug, resistance of the variable resistance element changing in accordance with an voltage applied to the variable resistance element, one single insulating layer that is directly or indirectly in contact with a sidewall of the contact plug and that is directly or indirectly in contact with a sidewall of the variable resistance element, and a second conductive layer disposed on the variable resistance element.
Abstract translation: 非易失性存储装置包括设置在基板上的第一导电层，包括导电材料并设置在第一导电层上的接触插塞，覆盖接触插塞的上表面的可变电阻元件，可变电阻元件的电阻变化 根据施加到可变电阻元件的电压，直接或间接地与接触插塞的侧壁接触并直接或间接与可变电阻元件的侧壁接触的单个绝缘层，以及第二导电 层设置在可变电阻元件上。
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公开(公告)号：US20240044028A1
公开(公告)日：2024-02-08
申请号：US18487062
申请日：2023-10-14
Inventor： HIROSHI SHIRATAKI , TAKAO HAYASHI , HIDEAKI MURASE , KOICHIRO ASAZAWA
IPC: C25B15/027 , C25B1/04 , C25B15/021 , C25B9/67 , C25B11/075 , C25B11/054 , C25B11/037 , C25B11/032 , C25B11/061
CPC classification number: C25B15/027 , C25B1/04 , C25B15/021 , C25B9/67 , C25B11/075 , C25B11/054 , C25B11/037 , C25B11/032 , C25B11/061
Abstract: A water electrolyzer includes an electrochemical cell including an anode and a cathode, an electrolyte solution, a voltage applicator, and a controller. The voltage applicator applies a voltage between the anode and the cathode. The electrochemical cell includes nickel. In the shutdown of the water electrolyzer, the controller causes the voltage applicator to apply the voltage at least when the temperature of the electrolyte solution is equal to or more than a predetermined threshold value.
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9.发明公开公开(公告)号：US20230220571A1
公开(公告)日：2023-07-13
申请号：US18183210
申请日：2023-03-14
Inventor： HIROSHI SHIRATAKI , HIDEAKI MURASE , TAKAO HAYASHI , MICHIO SUZUKA
IPC: C25B11/057 , C25B1/04 , C25B9/23 , C25B11/054 , C25B11/075
CPC classification number: C25B11/057 , C25B1/04 , C25B9/23 , C25B11/054 , C25B11/075
Abstract: An electrode catalyst for a water electrolysis cell includes a catalyst, and a polymer of intrinsic microporosity having a Tröger's base skeleton containing a quaternary ammonium group. A water electrolysis cell includes an anode, a cathode, and an electrolyte membrane. The electrolyte membrane is disposed between the anode and the cathode. At least one selected from the group consisting of the anode and the cathode includes the electrode catalyst.
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10.发明申请公开(公告)号：US20180358482A1
公开(公告)日：2018-12-13
申请号：US15979931
申请日：2018-05-15
Inventor： HIDEAKI MURASE , RYOSUKE KIKUCHI
IPC: H01L31/0224 , H01L31/18 , C01B3/02
CPC classification number: H01L31/0224 , C01B3/02 , C01B3/042 , H01L31/02167 , H01L31/18
Abstract: A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.
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