公开(公告)号：US20060081564A1

公开(公告)日：2006-04-20

申请号：US10512862

申请日：2003-06-27

Applicant: Paul Moroz ,  Eric Strang

Inventor： Paul Moroz ,  Eric Strang

IPC: B23K9/00

CPC classification number: H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/0206

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condidtion, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract translation: 一种用于等离子体处理的电弧抑制系统，其包括耦合到所述等离子体处理系统的至少一个传感器，以及耦合到所述至少一个传感器的控制器。 控制器提供至少一种算法，用于使用从至少一个传感器产生的至少一个信号来确定与衬底接触的等离子体的状态，并控制等离子体处理系统以抑制电弧事件。 当传感器之间的电压差超过目标差异时，等离子体处理系统被确定为容易产生电弧。 在这种情况下，通知操作者，并且可以做出决定以继续处理，修改处理或停止处理。

公开(公告)号：US07199327B2

公开(公告)日：2007-04-03

申请号：US10512862

申请日：2003-06-27

Applicant: Paul Moroz ,  Eric Strang

Inventor： Paul Moroz ,  Eric Strang

IPC: B23K10/00

CPC classification number: H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/0206

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract translation: 一种用于等离子体处理的电弧抑制系统，其包括耦合到所述等离子体处理系统的至少一个传感器，以及耦合到所述至少一个传感器的控制器。 控制器提供至少一种算法，用于使用从至少一个传感器产生的至少一个信号来确定与衬底接触的等离子体的状态，并控制等离子体处理系统以抑制电弧事件。 当传感器之间的电压差超过目标差异时，等离子体处理系统被确定为容易产生电弧。 在这种情况下，通知操作员，并且可以做出继续处理，修改处理或停止处理的决定。

公开(公告)号：US20060060303A1

公开(公告)日：2006-03-23

申请号：US11236535

申请日：2005-09-28

Applicant: Steven Fink ,  Paul Moroz ,  Eric Strang ,  Andrej Mitrovic

Inventor： Steven Fink ,  Paul Moroz ,  Eric Strang ,  Andrej Mitrovic

IPC: B08B6/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/3244 ,  H01J2237/022

Abstract: A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.

Abstract translation: 等离子体处理系统包括容纳等离子体处理区域的腔室和构造和布置成在处理区域内的腔室内支撑衬底的卡盘。 等离子体处理系统还包括至少一个与室连通的气体注入通道，并且构造成便于通过吹扫气体从腔室中除去颗粒。 在一个实施例中，等离子体处理系统可以包括电极，其被配置为当电极用DC或RF功率偏置时通过静电力吸引或排斥腔室中的颗粒。 一种在等离子体处理系统中处理衬底的方法，包括通过与室连通的至少一个气体注入通道供应净化气体来去除等离子体处理系统的腔室中的颗粒。

公开(公告)号：US20060032287A1

公开(公告)日：2006-02-16

申请号：US10521118

申请日：2003-07-23

Applicant: Eric Strang ,  Richard Parsons ,  Jody Goldfield

Inventor： Eric Strang ,  Richard Parsons ,  Jody Goldfield

IPC: G01N19/02 ,  G01N3/56

CPC classification number: H01J37/32192 ,  H01J37/32935 ,  H01J37/3299

Abstract: The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.

Abstract translation: 本发明提供了一种用于等离子体处理的诊断系统，其中诊断系统包括多模谐振器，电源，检测器和控制器。 控制器耦合到电源和检测器，并且其被配置为提供用于执行与诊断系统相关联的多个监视和控制功能的人机接口，包括：耿氏二极管电压监视器，耿氏二极管电流监视器，变容二极管 二极管电压监视器，检测器电压监视器，变容二极管电压控制，变容二极管电压扫描控制，共振锁定控制，图形用户控制和电子密度监视器。 诊断系统还可以提供耦合到控制器并被配置为提供远程人机界面的遥控器。 远程人机界面。 远程人机界面可以提供图形用户界面，以便允许操作者对诊断系统进行远程控制。 此外，本发明提供了几种控制诊断系统以便执行监视和控制功能的方法。

公开(公告)号：US20050270895A1

公开(公告)日：2005-12-08

申请号：US11201109

申请日：2005-08-11

Applicant: Eric Strang

Inventor： Eric Strang

IPC: B01F3/02 ,  B01F5/02 ,  B01J4/00 ,  B01J19/26 ,  C23C16/44 ,  C23C16/455 ,  C23G5/00

CPC classification number: C23C16/45512 ,  B01F3/02 ,  B01F5/0256 ,  B01J4/001 ,  B01J19/26 ,  C23C16/455 ,  C23G5/00 ,  Y10T137/87652

Abstract: A chemical processing system includes a mixing chamber coupled to the chemical processing system. A stream of first process gas and a stream of second process gas are introduced into the mixing chamber. The stream of first process gas and the stream of second process gas interact with each other to form a mixed process gas, which is supplied to the substrate for processing thereof. A method of mixing process gas in a mixing chamber of a chemical processing system is provided. The method includes injecting a stream of first process gas and a stream of second process gas into the mixing chamber, causing the streams of the first process gas and the second process gas to interact and mixing the first process gas and the second process gas in the mixing chamber to form a mixed process gas. A mixing system is also provided.

Abstract translation: 化学处理系统包括耦合到化学处理系统的混合室。 将第一工艺气体流和第二工艺气体流引入混合室。 第一工艺气体流和第二工艺气体流彼此相互作用以形成混合工艺气体，其被提供给衬底以进行处理。 提供了一种在化学处理系统的混合室中混合处理气体的方法。 该方法包括将第一工艺气体流和第二工艺气体流注入到混合室中，使得第一工艺气体和第二工艺气体的流在第一工艺气体和第二工艺气体之间相互作用并混合 混合室以形成混合工艺气体。 还提供混合系统。

公开(公告)号：US20050171730A1

公开(公告)日：2005-08-04

申请号：US10767347

申请日：2004-01-30

Applicant: Andrej Mitrovic ,  Eric Strang

Inventor： Andrej Mitrovic ,  Eric Strang

IPC: G01B11/06 ,  G06F15/00 ,  H01J37/32

CPC classification number: G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract translation: 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US20060093746A1

公开(公告)日：2006-05-04

申请号：US10980172

申请日：2004-11-04

Applicant: Eric Strang

Inventor： Eric Strang

IPC: B05D1/36 ,  B05D1/18 ,  B05D7/00

CPC classification number: C23C18/00 ,  C23C18/1619 ,  C23C18/1658 ,  C23C18/1678 ,  C23C18/1685 ,  C23C18/40

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

公开(公告)号：US20050178335A1

公开(公告)日：2005-08-18

申请号：US11103542

申请日：2005-04-12

Applicant: Eric Strang ,  Wayne Johnson

Inventor： Eric Strang ,  Wayne Johnson

IPC: H01L21/26 ,  H01L21/00 ,  H01L21/687 ,  C23C16/00

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

Abstract translation: 一种用于在半导体制造期间对衬底进行热处理的方法和装置。 该方法包括使用加热组件将衬底加热至预定温度，使用冷却组件将衬底冷却至预定温度，该冷却组件位于加热组件和冷却组件之间提供导热区域，并调节热电导率 导电区域以帮助加热和冷却基板。 该装置包括加热组件，冷却组件，其定位成使得在加热和冷却组件之间设置热传导区域，以及用于调节导热区域的热导率的结构或构造。

公开(公告)号：US20050098265A1

公开(公告)日：2005-05-12

申请号：US10705224

申请日：2003-11-12

Applicant: Steven Fink ,  Eric Strang ,  Arthur Laflamme ,  Jay Wallace ,  Sandra Hyland

Inventor： Steven Fink ,  Eric Strang ,  Arthur Laflamme ,  Jay Wallace ,  Sandra Hyland

IPC: H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC classification number: H01J37/32633 ,  H01J37/32834 ,  H01L21/67069

Abstract: A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.

Abstract translation: 构造成在等离子体处理系统中耦合到衬底保持器的挡板组件包括具有一个或多个开口以允许气体在其中通过的挡板，其中挡板与衬底保持器的联接有利于自动 - 等离子体处理系统中的挡板的重心。 例如，安装在基板保持器中的定心环可以包括配置成与挡板上的配合特征联接的定心特征。 在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。

公开(公告)号：US20050071035A1

公开(公告)日：2005-03-31

申请号：US10673467

申请日：2003-09-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: H01L20060101 ,  G06F19/00

CPC classification number: G05B19/41885 ,  Y02P90/26 ,  Y02P90/86

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.

Abstract translation: 一种用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，输入与半导体处理工具相关的第一原理物理模型，使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果。 第一原理模拟结果用于建立经验模型，并选择第一原理模拟结果和经验模型中的至少一个来控​​制半导体处理工具执行的过程。