利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

40 条记录 (耗时 0.036 秒)

    ANTI-HUMAN PD-1 ANTIBODY CRYSTALS AND METHODS OF USE THEREOF
    3.
    发明申请
    ANTI-HUMAN PD-1 ANTIBODY CRYSTALS AND METHODS OF USE THEREOF 有权

    公开(公告)号：US20210317215A1

    公开(公告)日：2021-10-14

    申请号：US17287588

    申请日：2019-10-28

    申请人： Merck Sharp & Dohme Corp.

    发明人： Paul Reichert ,  Winifred W. Prosise ,  Xiaoyu Yang ,  Corey Strickland ,  Chakravarthy Nachu Narasimhan ,  Thierry O. Fischmann ,  Erika R. Walsh ,  Yongchao Su

    IPC分类号： C07K16/28 ,  A61K47/10 ,  A61K47/68 ,  A61K31/522 ,  A61K45/06

    摘要： The invention provides methods for producing crystalline an anti-PD-1 monoclonal antibody (mAb), wherein the mAb is pembrolizumab or a pembrolizumab variant, comprising (1) mixing a solution comprising (a) the mAb, (b) polyethylene glycol (PEG), and (c) an additive selected from the group consisting of: caffeine, theophylline, 2′ deoxyguanosine-5′-monophosphate, a bioactive gibberellin, and a pharmaceutically acceptable salt of said bioactive gibberellin, to form a crystallization solution, (2) incubating the crystallization solution for a period of time sufficient for crystal formation; and (3) optionally harvesting the crystalline anti-PD-1 mAb from the solution. In specific embodiments, the PEG is PEG 3350 and the additive is caffeine. The invention also relates to the novel anti-human PD-1 mAb crystals produced by the methods described herein. Characterization of re-dissolved crystalline suspensions using several biochemical methods showed the bio-physical properties of the re-dissolved mAb crystals were consistent with the intact antibody starting sample. The crystals and methods of the invention are amenable to multiple pharmaceutical applications such as purification, storage, formulation, and drug delivery.

    Process for masking and removal of residue from complex shapes
    6.
    发明授权
    Process for masking and removal of residue from complex shapes 失效
    从复杂形状掩盖和去除残留物的方法

    公开(公告)号：US08518832B1

    公开(公告)日：2013-08-27

    申请号：US13169588

    申请日：2011-06-27

    申请人： Xiaoyu Yang ,  Xianzhong Zeng ,  Yan Chen ,  Yunhe Huang ,  Jinqiu Zhang ,  Yang Xiang ,  Ching-Huang Lu

    发明人： Xiaoyu Yang ,  Xianzhong Zeng ,  Yan Chen ,  Yunhe Huang ,  Jinqiu Zhang ,  Yang Xiang ,  Ching-Huang Lu

    IPC分类号： H01L21/311 ,  H01L21/461

    CPC分类号： B81C1/00849 ,  B81B2203/0118 ,  B81C1/0015 ,  B81C2201/0132 ,  G03F7/40 ,  H01L21/31133

    摘要： A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.

    摘要翻译： 提供了一种用于蚀刻掩模层并从具有从定向蚀刻遮蔽的区域的结构中除去残余物的方法。 该结构具有形成通过来自第一方向的各向异性轰击而被阻挡而不被蚀刻的轮廓区域的形状，以及在该结构上形成在掩模层上的掩模; 第一蚀刻工艺去除掩模层的至少一部分并且将掩模层的至少一部分保留在遮蔽区域中。 第二蚀刻工艺通过基于氢的微波等离子体蚀刻去除遮蔽区域中的掩模层的至少一部分。

    MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE
    9.
    发明申请
    MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE 有权
    具有适用于低电压使用的高介电常数抗体的存储器

    公开(公告)号：US20090140299A1

    公开(公告)日：2009-06-04

    申请号：US12367214

    申请日：2009-02-06

    申请人： Xiaoyu Yang ,  Roy E. Scheuerlein ,  Feng Li ,  Albert T. Meeks

    发明人： Xiaoyu Yang ,  Roy E. Scheuerlein ,  Feng Li ,  Albert T. Meeks

    IPC分类号： H01L29/66 ,  H01L23/525

    CPC分类号： H01L45/12 ,  G11C17/00 ,  G11C17/16 ,  H01L23/5252 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

    摘要翻译： 通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝材料，并且通过使用具有较低的二极管的二极管，可以使具有包括二极管和反熔丝的存储单元的存储器阵列更小并以较低的电压编程 带隙比硅。 这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。 具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。 带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

    Memory cell with voltage modulated sidewall poly resistor
    10.
    发明申请
    Memory cell with voltage modulated sidewall poly resistor 审中-公开
    具有电压调制侧壁聚电阻的存储单元

    公开(公告)号：US20090003083A1

    公开(公告)日：2009-01-01

    申请号：US11819562

    申请日：2007-06-28

    申请人： Albert Meeks ,  Xiaoyu Yang ,  Kim Le

    发明人： Albert Meeks ,  Xiaoyu Yang ,  Kim Le

    IPC分类号： G11C11/34

    CPC分类号： H01L27/10 ,  G11C11/5671 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/685

    摘要： A two terminal nonvolatile memory cell includes a first electrode, a second electrode, a charge storage medium, and a resistive element. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes. A presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.

    摘要翻译： 双端非易失性存储单元包括第一电极，第二电极，电荷存储介质和电阻元件。 电荷存储介质和电阻元件在第一和第二电极之间并联连接。 存储在电荷存储介质中的电荷的存在或不存在影响电阻元件的电阻率。