公开(公告)号：US20090081848A1

公开(公告)日：2009-03-26

申请号：US12212386

申请日：2008-09-17

申请人： Yuri EROKHIN ,  Paul SULLIVAN ,  Steven R. WALTHER ,  Peter NUNAN

发明人： Yuri EROKHIN ,  Paul SULLIVAN ,  Steven R. WALTHER ,  Peter NUNAN

IPC分类号： H01L21/46 ,  H01J37/08

CPC分类号： H01L21/76251 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/201 ,  H01J2237/202 ,  H01L21/26506 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2924/30105

摘要： A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.

摘要翻译： 公开了一种通过离子注入激活的晶片接合两个基板的方法。 原位离子键合室允许离子激活和结合发生在制造工艺线中使用的现有工艺工具中。 在低注入能量下进行至少一个衬底的离子激活，以确保薄表面层下面的晶片材料不受离子激活的影响。

公开(公告)号：US20100041176A1

公开(公告)日：2010-02-18

申请号：US12603707

申请日：2009-10-22

申请人： Paul SULLIVAN ,  Peter Nunan ,  Steven R. Walther

发明人： Paul SULLIVAN ,  Peter Nunan ,  Steven R. Walther

IPC分类号： H01L31/0232 ,  H01L31/02

CPC分类号： H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

摘要： Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

摘要翻译： 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US20110237022A1

公开(公告)日：2011-09-29

申请号：US13070206

申请日：2011-03-23

申请人： Nicholas P.T. BATEMAN ,  William T. WEAVER ,  Paul SULLIVAN ,  John W. GRAFF

发明人： Nicholas P.T. BATEMAN ,  William T. WEAVER ,  Paul SULLIVAN ,  John W. GRAFF

IPC分类号： H01L31/0376 ,  H01L31/0248

CPC分类号： H01L21/266 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods to form complementary implant regions in a workpiece are disclosed. A mask may be aligned with respect to implanted or doped regions on the workpiece. The mask also may be aligned with respect to surface modifications on the workpiece, such as deposits or etched regions. A masking material also may be deposited on the implanted regions using the mask. The workpiece may be a solar cell.

摘要翻译： 公开了在工件中形成互补植入区域的方法。 掩模可以相对于工件上的注入或掺杂区域排列。 掩模也可以相对于工件上的表面改性（例如沉积物或蚀刻区域）对准。 掩模材料也可以使用掩模沉积在注入区域上。 工件可以是太阳能电池。

公开(公告)号：US20100224240A1

公开(公告)日：2010-09-09

申请号：US12781406

申请日：2010-05-17

申请人： Nicholas BATEMAN ,  Atul GUPTA ,  Paul SULLIVAN

发明人： Nicholas BATEMAN ,  Atul GUPTA ,  Paul SULLIVAN

IPC分类号： H01L27/142

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.

摘要翻译： 公开了一种太阳能电池，特别是IBC太阳能电池的反掺杂方法。 太阳能电池的一个表面可能需要部分被n掺杂，而其它部分是p掺杂的。 传统上，需要多个光刻和掺杂步骤来实现这种期望的配置。 相比之下，可以通过使用一种导电性的覆盖掺杂和具有相反电导率的掩模图案化反向掺杂工艺来消除一个光刻步骤。 在掩模图案化掺杂期间计量的面积接收足够的剂量，以完全反转覆盖掺杂的效果，并获得与覆盖掺杂相反的电导率。 在另一个实施例中，通过直接图案化技术执行反掺杂，从而消除了剩余的光刻步骤。 公开了各种直接反打法的方法。