摘要:
A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO2, ZnO, MgO, Al2O3, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO2, transition metal doped TiO2 (e.g., CO0.05Ti0.95O2), BaTiO3, ZnO, transition metal doped ZnO (e.g., Mn0.1Zn0.9O and Ni0.1Zn0.9O), LaMnO3, BaTiO3, PbTiO3, YBa2Cu3Oz, or SrCu2O2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, Al, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.
摘要翻译:描述了包括纳米薄片基底和外延沉积在纳米薄片的平坦表面上的氧化物的双层纳米线。 氧化物使用脉冲激光烧蚀沉积工艺沉积在衬底上。 纳米带可以由诸如SnO 2,ZnO,MgO,Al 2 O 3 3,Si,GaN或CdS的材料制成。 此外,烧结氧化物靶可以由诸如TiO 2,过渡金属掺杂的TiO 2(例如,CO <0.05> Ti 3 sub>,YBa 2,3 sub> 3 sub>或SrCu 2 O 2 和/或其它p型氧化物。 另外,描述了温度敏感的纳米棒/金属双层及其通过热蒸发制造的方法。 诸如Cu,Au,Ti,Al,Pt,Ni等的金属可以沉积在纳米棒表面的顶部。 这样的装置作为温度的函数显着弯曲,并且适合于例如热活化的纳米级致动器。
摘要:
A microfluidic optical sensor utilizes at least one subwavelength nanowire or nanoribbon waveguide coupled to a fluidic structure having at least one nanofluidic channel through which one or more molecular species are conveyed. In response to optical pumping (e.g., a laser source) the waveguide optically interrogates nearby molecular species retained within said fluidic structure to detect chemical species in response to optical characterization of small (on the order of sub-picoliter) volumes of solution. Characterization is performed in response to evanescent wave sensing. In one aspect, optical characterization is selected from the group of optical characterizations consisting of absorbance, fluorescence and surface enhanced Raman spectroscopy (SERS).
摘要:
Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any suitable substrate. Photovoltaic devices are also described.
摘要:
A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
摘要:
A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
摘要:
Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any suitable substrate. Photovoltaic devices are also described.
摘要:
Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any suitable substrate. Photovoltaic devices are also described.
摘要:
Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 μm. They can be formed on any suitable substrate. Photovoltaic devices are also described.
摘要:
A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.