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公开(公告)号：US08648412B1
公开(公告)日：2014-02-11
申请号：US13487479
申请日：2012-06-04
CPC分类号： H01L29/7813 , H01L21/26506 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/4933 , H01L29/66727 , H01L29/66734
摘要： In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions.
摘要翻译： 在一个实施例中，具有受控的，浅的，突然的身体接触区域的沟槽功率场效应晶体管器件的结构。
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2.发明申请CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING TRENCH SHIELD ELECTRODE AND METHOD 有权具有TRENCH屏蔽电极的半导体器件的接触结构及方法公开(公告)号：US20100123187A1
公开(公告)日：2010-05-20
申请号：US12271030
申请日：2008-11-14
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
摘要翻译： 在一个实施例中，具有沟槽屏蔽电极的半导体器件的接触结构包括沟槽结构内的栅电极接触部分和屏蔽电极接触部分。 在沟槽结构内部或内部对栅电极和屏蔽电极进行接触。 厚的钝化层包围接触部分中的屏蔽电极。
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3.发明授权Contact structure for semiconductor device having trench shield electrode and method 有权具有沟槽屏蔽电极的半导体器件的接触结构及方法公开(公告)号：US08362548B2
公开(公告)日：2013-01-29
申请号：US12271030
申请日：2008-11-14
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
摘要翻译： 在一个实施例中，具有沟槽屏蔽电极的半导体器件的接触结构包括沟槽结构内的栅电极接触部分和屏蔽电极接触部分。 在沟槽结构内部或内部对栅电极和屏蔽电极进行接触。 厚的钝化层包围接触部分中的屏蔽电极。
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公开(公告)号：US08552535B2
公开(公告)日：2013-10-08
申请号：US12271068
申请日：2008-11-14
申请人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
发明人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
IPC分类号： H01L29/66
CPC分类号： H01L29/4236 , H01L29/0696 , H01L29/401 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/66734 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
摘要翻译： 用于半导体器件的屏蔽结构包括多个沟槽。 沟槽包括形成在其中的钝化衬垫和屏蔽电极。 在一个实施例中，屏蔽结构位于控制板下方。 在另一个实施例中，屏蔽结构放置在控制转轮下方。
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公开(公告)号：US20120326227A1
公开(公告)日：2012-12-27
申请号：US13170033
申请日：2011-06-27
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/0869 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/4933 , H01L29/66348 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7827
摘要： In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.
摘要翻译： 在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。 栅电极使用栅极绝缘层与半导体材料隔离。 在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。 屏蔽绝缘层比栅极绝缘层厚。 在另一个实施例中，屏蔽绝缘层具有可变的厚度。
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6.发明申请TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD 有权用于半导体器件和方法的TRENCH SHIELDING STRUCTURE公开(公告)号：US20100123220A1
公开(公告)日：2010-05-20
申请号：US12271068
申请日：2008-11-14
申请人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
发明人： Peter A. Burke , Brian Pratt , Prasad Venkatraman
IPC分类号： H01L21/3205 , H01L23/58
CPC分类号： H01L29/4236 , H01L29/0696 , H01L29/401 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/66734 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
摘要翻译： 用于半导体器件的屏蔽结构包括多个沟槽。 沟槽包括形成在其中的钝化衬垫和屏蔽电极。 在一个实施例中，屏蔽结构位于控制板下方。 在另一个实施例中，屏蔽结构位于控制转轮下方。
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公开(公告)号：US08889532B2
公开(公告)日：2014-11-18
申请号：US13170033
申请日：2011-06-27
IPC分类号： H01L21/36 , H01L21/20 , H01L21/336 , H01L29/66 , H01L29/40 , H01L29/78 , H01L29/739 , H01L29/08 , H01L29/45 , H01L29/417 , H01L29/49 , H01L29/423
CPC分类号： H01L29/7813 , H01L29/0869 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/4933 , H01L29/66348 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7827
摘要： In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.
摘要翻译： 在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。 栅电极使用栅极绝缘层与半导体材料隔离。 在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。 屏蔽绝缘层比栅极绝缘层厚。 在另一个实施例中，屏蔽绝缘层具有可变的厚度。
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公开(公告)号：US08685822B2
公开(公告)日：2014-04-01
申请号：US13022628
申请日：2011-02-07
申请人： Peter A. Burke , Duane B. Barber , Brian Pratt
发明人： Peter A. Burke , Duane B. Barber , Brian Pratt
IPC分类号： H01L21/336
CPC分类号： H01L29/66727 , H01L29/407 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
摘要翻译： 包括栅电极和屏蔽电极的半导体部件和制造半导体部件的方法。 半导体材料具有器件区域，栅极接触区域，端接区域和漏极接触区域。 在器件区域中形成一个或多个器件沟槽，并且在边缘端接区域中形成一个或多个端接沟槽。 屏蔽电极形成在与它们的地板相邻的器件沟槽的部分中。 在器件区域中的沟槽的侧壁上形成栅极电介质材料，并且在屏蔽电极之间形成栅电极并与屏蔽电极电绝缘。 器件区域中的沟槽中的栅电极连接到栅极接触区域中的沟槽中的栅电极。 器件区域的沟槽中的屏蔽电极与端接区域中的屏蔽电极相连。
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9.发明授权Device for aerating a region after injection with vaporized hydrogen peroxide 有权注射后用蒸发的过氧化氢使区域充气的装置公开(公告)号：US07988920B2
公开(公告)日：2011-08-02
申请号：US12939246
申请日：2010-11-04
CPC分类号： A61L2/208 , A61L2/202 , A61L2/206 , A61L9/015 , A61L2202/13
摘要： A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.
摘要翻译： 用于对暴露于气体/蒸气灭菌剂的区域进行曝气的方法和装置。 催化破坏剂和反应性化学单元用于降低该区域内气态/蒸气灭菌剂的浓度。 反应性化学单元包括与气态/蒸气灭菌剂化学反应的化学物质。 在一个实施方案中，气态/蒸气灭菌剂是蒸发的过氧化氢，并且反应性化学单元的化学性质包括硫代硫酸盐和碘化物。
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10.发明授权Method of manufacturing semiconductor component with gate and shield electrodes in trenches 有权在沟槽中制造具有栅极和屏蔽电极的半导体部件的方法公开(公告)号：US07897462B2
公开(公告)日：2011-03-01
申请号：US12271083
申请日：2008-11-14
申请人： Peter A. Burke , Duane B. Barber , Brian Pratt
发明人： Peter A. Burke , Duane B. Barber , Brian Pratt
IPC分类号： H01L21/336
CPC分类号： H01L29/66727 , H01L29/407 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66734 , H01L29/7809 , H01L29/7811 , H01L29/7813
摘要： A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.
摘要翻译： 包括栅电极和屏蔽电极的半导体部件和制造半导体部件的方法。 半导体材料具有器件区域，栅极接触区域，端接区域和漏极接触区域。 在器件区域中形成一个或多个器件沟槽，并且在边缘端接区域中形成一个或多个端接沟槽。 屏蔽电极形成在与它们的地板相邻的器件沟槽的部分中。 在器件区域中的沟槽的侧壁上形成栅极电介质材料，并且在屏蔽电极之间形成栅电极并与屏蔽电极电绝缘。 器件区域中的沟槽中的栅电极连接到栅极接触区域中的沟槽中的栅电极。 器件区域的沟槽中的屏蔽电极与端接区域中的屏蔽电极相连。
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