Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights
    1.
    发明授权
    Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights 失效
    使用弹簧和配重的往复旋转运动的晶圆扫描系统

    公开(公告)号:US07267520B2

    公开(公告)日:2007-09-11

    申请号:US11099022

    申请日:2005-04-05

    IPC分类号: B66F9/00

    摘要: The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

    摘要翻译: 本发明涉及一种用于处理工件的扫描装置和方法,其中扫描装置包括彼此固定地连接的晶片臂和移动臂,其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器,其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件,其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

    Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights
    2.
    发明申请
    Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights 失效
    使用弹簧和配重的往复旋转运动的晶圆扫描系统

    公开(公告)号:US20050254932A1

    公开(公告)日:2005-11-17

    申请号:US11099022

    申请日:2005-04-05

    IPC分类号: B66F9/00 H01L21/00

    摘要: The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

    摘要翻译: 本发明涉及一种用于处理工件的扫描装置和方法,其中扫描装置包括彼此固定地连接的晶片臂和移动臂,其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器,其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件,其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

    Techniques for plasma injection
    3.
    发明授权
    Techniques for plasma injection 有权
    等离子体注入技术

    公开(公告)号:US07723707B2

    公开(公告)日:2010-05-25

    申请号:US11781700

    申请日:2007-07-23

    IPC分类号: G21G1/00

    摘要: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中,这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列,第一阵列位于离子束路径的第一侧上,第二阵列位于第二阵列的第二阵列上 离子束路径的一侧,第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源,其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

    Glass-like insulator for electrically isolating electrodes from ion implanter housing
    4.
    发明授权
    Glass-like insulator for electrically isolating electrodes from ion implanter housing 有权
    用于将电极与离子注入机外壳电隔离的玻璃状绝缘体

    公开(公告)号:US06291828B1

    公开(公告)日:2001-09-18

    申请号:US09469068

    申请日:1999-12-21

    IPC分类号: G21K510

    摘要: An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO2), or a heat resistant and chemical resistant glass material such as Pyrex®. The members (92) resist accumulation of material such as graphite sputtered off of the electrodes (84a-84d) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.

    摘要翻译: 为具有离子束通过的轴线(86)的离子注入机(10)提供静电四极透镜组件(60),包括:(i)从轴线(86)径向向外取向的四个电极(84a-84d) )彼此大约90°,使得第一对电极(84a和84c)彼此相对大约180°,并且第二对电极(84b和84d)也彼此相对大约180°; (ii)具有用于将所述组件(60)安装到所述注入器的安装表面(64)的壳体(62),所述壳体至少部分地包围所述四个电极(84a-84d); (iii)用于向所述第一对电极(84a和84c)提供电力的第一电引线(104); (iv)用于向所述第二对电极(84b和84d)提供电力的第二电引线(108); 和(v)由玻璃状材料形成的多个电绝缘构件(92),至少包括用于将第一对电极(84a和84c)附接到壳体的第一电绝缘构件,以及至少第二 用于将第二对电极(84b和84d)附接到壳体的电绝缘构件。 多个电绝缘构件(92)优选地由石英(SiO 2)或耐热和耐化学腐蚀的玻璃材料(例如Pyrex)组成。 构件(92)通过离子束阻止溅射在电极(84a-84d)之外的诸如石墨的材料的堆积,从而减少高压击穿和电流击穿的发生。

    TECHNIQUES FOR PLASMA INJECTION
    5.
    发明申请
    TECHNIQUES FOR PLASMA INJECTION 有权
    等离子体注射技术

    公开(公告)号:US20090026390A1

    公开(公告)日:2009-01-29

    申请号:US11781700

    申请日:2007-07-23

    IPC分类号: H01J37/08

    摘要: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中,这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列,第一阵列位于离子束路径的第一侧上,第二阵列位于第二阵列的第二阵列上 离子束路径的一侧,第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源,其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

    Architecture for ribbon ion beam ion implanter system
    6.
    发明授权
    Architecture for ribbon ion beam ion implanter system 有权
    带状离子束离子注入机系统的结构

    公开(公告)号:US07394079B2

    公开(公告)日:2008-07-01

    申请号:US11275772

    申请日:2006-01-27

    IPC分类号: H01J37/317

    摘要: An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.

    摘要翻译: 公开了一种带状离子束离子注入机系统的结构。 在一个实施例中,该架构包括用于接收扇形带状离子束的加速/减速并行化透镜系统,并且至少将扇形带状离子束并行(并且也可能加速或减速)到基本上平行的带状离子束中,并且能量 过滤系统在加速/减速并行化透镜系统的下游,以及待通过基本上平行的带状离子束植入的工件之前。 加速/减速并行化透镜系统包括用于至少并行(也可能加速或减速)扇形带状离子束和用于加速或减速基本上平行的带状离子束的加速/减速透镜的透镜。 并行化透镜允许将高电流带状离子束以能够向下延伸至低至约200eV的能量传递到工件。 能量过滤系统提供基本上没有能量污染的基本平行的带状离子束。

    Methods of implanting ions and ion sources used for same
    7.
    发明申请
    Methods of implanting ions and ion sources used for same 审中-公开
    植入离子和离子源的方法

    公开(公告)号:US20070178678A1

    公开(公告)日:2007-08-02

    申请号:US11342183

    申请日:2006-01-28

    IPC分类号: H01L21/26

    摘要: Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

    摘要翻译: 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如,源原料气体可以包含硼和至少两个其它元素(例如,X a,B B,B和C)。 使用这种源进料气体可以产生比某些常规方法多的优点,包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外,在某些实施方案中,源进料气体的组成可以选择为在相对较高的温度(例如,大于350℃)下是热稳定的,其允许在许多常规离子源中使用这种气体(例如,间接加热 阴极(IHC),伯纳斯)在使用过程中产生这种温度。

    Integrated resonator and amplifier system
    8.
    发明授权
    Integrated resonator and amplifier system 有权
    集成谐振器和放大器系统

    公开(公告)号:US06653803B1

    公开(公告)日:2003-11-25

    申请号:US09583157

    申请日:2000-05-30

    IPC分类号: H05H900

    CPC分类号: H05H7/02

    摘要: An integrated RF amplifier and resonator is provided for use with an ion accelerator. The amplifier includes an output substantially directly coupled with a resonator coil. The amplifier output may be coupled capacitively or inductively. In addition, an apparatus is provided for accelerating ions in an ion implanter. The apparatus comprises an amplifier with an RF output, a tank circuit with a coil substantially directly coupled to the RF output of the amplifier, and an electrode connected to the coil for accelerating ions. Also provided is a method for coupling an RF amplifier with a resonator in an ion accelerator. The method comprises connecting the RF output of the amplifier to a coupler, and locating the coupler proximate the coil, thereby substantially directly coupling the RF output of the amplifier with the resonator coil.

    摘要翻译: 提供集成的RF放大器和谐振器用于离子加速器。 放大器包括基本上直接与​​谐振器线圈耦合的输出。 放大器输出可以电容或电感耦合。 此外,提供了用于加速离子注入机中的离子的装置。 该装置包括具有RF输出的放大器,具有基本上直接耦合到放大器的RF输出的线圈的振荡电路,以及连接到用于加速离子的线圈的电极。 还提供了一种在离子加速器中将RF放大器与谐振器耦合的方法。 该方法包括将放大器的RF输出连接到耦合器,并将耦合器定位在线圈附近,从而基本上将放大器的RF输出与谐振器线圈直接耦合。

    Microchannel Plate Devices With Tunable Resistive Films
    10.
    发明申请
    Microchannel Plate Devices With Tunable Resistive Films 审中-公开
    具有可调电阻膜的微通道板装置

    公开(公告)号:US20120273689A1

    公开(公告)日:2012-11-01

    申请号:US13543804

    申请日:2012-07-07

    IPC分类号: G01T3/00

    CPC分类号: H01J43/246 G01T3/08

    摘要: A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

    摘要翻译: 用于检测中子的微通道板包括富氢聚合物基底,其限定从基底的顶表面延伸到基底的底表面的多个通道,其中中子与多个通道相互作用以产生至少一个二次电子 。 顶部电极位于衬底的顶表面上,底部电极位于衬底的底表面上。 电阻层形成在多个通道的外表面上,其提供基本恒定的电阻率的欧姆导电。 在电阻层上形成发光层。 中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子,以提供与中子检测有关的放大信号。