公开(公告)号：US07267520B2

公开(公告)日：2007-09-11

申请号：US11099022

申请日：2005-04-05

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

IPC分类号： B66F9/00

CPC分类号： H01L21/67069 ,  H01J2237/20228 ,  H01J2237/31701

摘要： The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

摘要翻译： 本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

公开(公告)号：US07723707B2

公开(公告)日：2010-05-25

申请号：US11781700

申请日：2007-07-23

申请人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

发明人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

IPC分类号： G21G1/00

CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055

摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

摘要翻译： 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

公开(公告)号：US06291828B1

公开(公告)日：2001-09-18

申请号：US09469068

申请日：1999-12-21

申请人： Kourosh Saadatmand ,  David R. Swenson ,  William F. DiVergilio ,  Stephen M. Quinn ,  Zhimin Wan ,  Victor M. Benveniste

发明人： Kourosh Saadatmand ,  David R. Swenson ,  William F. DiVergilio ,  Stephen M. Quinn ,  Zhimin Wan ,  Victor M. Benveniste

IPC分类号： G21K510

CPC分类号： H01J37/3171 ,  H01J37/12 ,  H01J2237/038 ,  H01J2237/04737 ,  H01J2237/04924

摘要： An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO2), or a heat resistant and chemical resistant glass material such as Pyrex®. The members (92) resist accumulation of material such as graphite sputtered off of the electrodes (84a-84d) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.

摘要翻译： 为具有离子束通过的轴线（86）的离子注入机（10）提供静电四极透镜组件（60），包括：（i）从轴线（86）径向向外取向的四个电极（84a-84d） ）彼此大约90°，使得第一对电极（84a和84c）彼此相对大约180°，并且第二对电极（84b和84d）也彼此相对大约180°; （ii）具有用于将所述组件（60）安装到所述注入器的安装表面（64）的壳体（62），所述壳体至少部分地包围所述四个电极（84a-84d）; （iii）用于向所述第一对电极（84a和84c）提供电力的第一电引线（104）; （iv）用于向所述第二对电极（84b和84d）提供电力的第二电引线（108）; 和（v）由玻璃状材料形成的多个电绝缘构件（92），至少包括用于将第一对电极（84a和84c）附接到壳体的第一电绝缘构件，以及至少第二 用于将第二对电极（84b和84d）附接到壳体的电绝缘构件。 多个电绝缘构件（92）优选地由石英（SiO 2）或耐热和耐化学腐蚀的玻璃材料（例如Pyrex）组成。 构件（92）通过离子束阻止溅射在电极（84a-84d）之外的诸如石墨的材料的堆积，从而减少高压击穿和电流击穿的发生。

公开(公告)号：US20090026390A1

公开(公告)日：2009-01-29

申请号：US11781700

申请日：2007-07-23

申请人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

发明人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055

摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

摘要翻译： 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

公开(公告)号：US07598495B2

公开(公告)日：2009-10-06

申请号：US11739934

申请日：2007-04-25

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Alexander S. Perel ,  Brian S. Freer ,  Michael A. Graf

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Alexander S. Perel ,  Brian S. Freer ,  Michael A. Graf

IPC分类号： H01J3/18

CPC分类号： H01J37/3171 ,  H01J37/12 ,  H01J2237/022 ,  H01J2237/049

摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.

摘要翻译： 一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面 所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压， 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

公开(公告)号：US20090121149A1

公开(公告)日：2009-05-14

申请号：US11937849

申请日：2007-11-09

申请人： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

发明人： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

IPC分类号： H01J3/18

CPC分类号： H01J37/1477 ,  H01J37/12 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542 ,  H01J2237/31701

摘要： Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.

摘要翻译： 公开了用于成形离子束的技术。 在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。 该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极 位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。

公开(公告)号：US5780863A

公开(公告)日：1998-07-14

申请号：US841725

申请日：1997-04-29

申请人： Victor M. Benveniste ,  Peter L. Kellerman

发明人： Victor M. Benveniste ,  Peter L. Kellerman

IPC分类号： C23C14/48 ,  H01J37/12 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265 ,  H01J37/10

CPC分类号： H01J37/3171 ,  H01J37/3007 ,  H01J2237/047 ,  H01J2237/1207

摘要： An electrostatic triode lens (36) is provided for use in an ion implantation system (10). The lens includes a terminal electrode (37) and an adjustable lens subassembly (40) comprising a suppression electrode (38) and a resolving electrode (39), each having matched curved surfaces (108, 110). The lens subassembly is positioned near the terminal electrode where the beam has a minimal waist in a first (dispersive) plane. Such positioning minimizes the required gaps between electrodes, and thus, helps minimize beam blow-up and the electron depletion region in the deceleration mode of operation. The suppression and resolving electrodes each have first and second portions (38A and 38B, 39A and 39B) separated by a gap (d38, d39). A movement mechanism (60, 62) simultaneously moves the first portions of the suppression and resolving electrodes (38A, 39A) toward and away from the second portions of the suppression and resolving electrodes (38B, 39B), respectively, to adjust the gaps (d38, d39) therebetween. The adjustable lens subassembly (40) conditions the beam output by the terminal electrode (37) by (i) variably focusing the beam in mutually orthogonal (dispersive and non-dispersive) planes in a deceleration mode of operation (where mass resolution is less critical), while (ii) permitting variable mass resolution in the dispersive plane in an acceleration mode of operation (where focusing is less critical). Generally, the gap (d39) between the resolving electrode pair (39) is adjusted to permit adjustable mass resolution in the dispersive plane in the acceleration mode of operation. In the deceleration mode of operation, adjustment of the gap (d39) provides adjustable dispersive plane focusing, while the voltage on suppression electrode (38) is adjusted to permit adjustable non-dispersive plane beam focusing.

公开(公告)号：US07888653B2

公开(公告)日：2011-02-15

申请号：US12348091

申请日：2009-01-02

申请人： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

发明人： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

IPC分类号： H01J3/14 ,  H01J49/22 ,  H01J23/083

CPC分类号： H01J37/1471 ,  H01J37/12 ,  H01J37/3171

摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.

摘要翻译： 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。

公开(公告)号：US07421973B2

公开(公告)日：2008-09-09

申请号：US10762114

申请日：2004-01-21

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  William F. DiVergili ,  Michael P. Bradley

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  William F. DiVergili ,  Michael P. Bradley

IPC分类号： C23C16/00 ,  C23C14/00 ,  C23C14/32 ,  H01J3/26 ,  H01J49/42 ,  H01J49/26 ,  B01D59/44

CPC分类号： H01J37/321 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/31708

摘要： An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.

摘要翻译： 离子淋浴器包括可操作以在室内产生源气体离子的等离子体源，以及与腔室的顶部相关联的提取组件。 提取组件可操作以从腔室的顶部提取离子。 离子淋浴器还包括与室的顶部相关联的工件支撑结构，该工件支撑结构可操作以将具有朝向朝向提取组件定向的注入表面的工件固定以用于其植入。 本发明的离子淋浴器有利地促进了具有高氧分数的SIMOX处理和用于下一代处理的均匀束流。

公开(公告)号：US20100171042A1

公开(公告)日：2010-07-08

申请号：US12348091

申请日：2009-01-02

申请人： Peter L. KELLERMAN ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

发明人： Peter L. KELLERMAN ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

IPC分类号： H01J3/14

CPC分类号： H01J37/1471 ,  H01J37/12 ,  H01J37/3171

摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.

摘要翻译： 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。