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19 条记录 (耗时 0.05 秒)

    Assembly for measuring a trench depth parameter of a workpiece
    2.
    发明授权
    Assembly for measuring a trench depth parameter of a workpiece 失效
    用于测量工件的沟槽深度参数的组件

    公开(公告)号：US5691540A

    公开(公告)日：1997-11-25

    申请号：US643090

    申请日：1996-04-30

    申请人： Scott D. Halle ,  Philip Charles Danby Hobbs ,  Tadashi Mitsui ,  Theodore G. van Kessel ,  Hemantha Kumar Wickramasinghe

    发明人： Scott D. Halle ,  Philip Charles Danby Hobbs ,  Tadashi Mitsui ,  Theodore G. van Kessel ,  Hemantha Kumar Wickramasinghe

    IPC分类号： G01B11/22

    CPC分类号： G01B11/22

    摘要： An assembly for measuring a trench depth parameter of a workpiece is disclosed. The assembly has an ultra-violet radiation source; a split fiber bundle having a first branch for propagating the ultra-violet radiation from the radiation source to a lens, and a second branch; a lens for focusing the UV radiation to the workpiece and refocusing an ultra-violet interference signal to the second branch; and a detector responsive to the ultra-violet interference signal received through the second branch. The detector transforms the ultra-violet interference signal to an electrical signal which is a measure of a trench depth of the workpiece. The ultra-violet interference signal is developed when ultra-violet radiation propagates through the workpiece and reflects from its base region to thereby interfere with ultra-violet radiation that is directly reflected by a workpiece surface which is different from the base region.

    摘要翻译： 公开了一种用于测量工件的沟槽深度参数的组件。 该组件具有紫外辐射源; 具有用于将紫外辐射从辐射源传播到透镜的第一分支的分裂光纤束和第二分支; 用于将UV辐射聚焦到工件并将紫外干涉信号重新聚焦到第二分支的透镜; 以及响应于通过第二分支接收的紫外干涉信号的检测器。 检测器将紫外线干涉信号转换成电信号，该电信号是工件的沟槽深度的量度。 当紫外线辐射传播通过工件并从其底部区域反射时，紫外线干涉信号被开发，从而干扰由与基底区域不同的工件表面直接反射的紫外辐射。

    Apparatus utilizing a variably diffractive radiation element
    3.
    发明授权
    Apparatus utilizing a variably diffractive radiation element 失效
    利用可变衍射辐射元件的装置

    公开(公告)号：US5794023A

    公开(公告)日：1998-08-11

    申请号：US656627

    申请日：1996-05-31

    申请人： Philip Charles Danby Hobbs ,  Theodore Gerard van Kessel

    发明人： Philip Charles Danby Hobbs ,  Theodore Gerard van Kessel

    IPC分类号： G02B5/18 ,  G02B26/08

    CPC分类号： G02B5/1828 ,  G02B26/0808

    摘要： Apparatus suitable for transforming a radiation beam so that it can exit with a predetermined alteration. The apparatus includes a first variably diffractive radiation element for transforming a characteristic of the radiation beam from an original state; a second radiation element juxtaposed to the first radiation element for transforming the same characteristic in a complementary way; and, means for physically deforming the first variably diffractive radiation element so that its diffracting pattern can change in a known way.

    摘要翻译： 适用于变换辐射束以使其能够以预定改变退出的装置。 该装置包括用于将辐射束的特性从原始状态变换的第一可变衍射辐射元件; 与第一辐射元件并置的第二辐射元件，用于以相互补充的方式变换相同的特性; 以及用于使第一可变衍射辐射元件物理变形以使其衍射图案可以以已知方式改变的装置。

    PHOTONIC WAVEGUIDE STRUCTURE WITH PLANARIZED SIDEWALL CLADDING LAYER
    8.
    发明申请
    PHOTONIC WAVEGUIDE STRUCTURE WITH PLANARIZED SIDEWALL CLADDING LAYER 审中-公开
    光子波形结构与平面化的封闭层

    公开(公告)号：US20080310808A1

    公开(公告)日：2008-12-18

    申请号：US11764447

    申请日：2007-06-18

    申请人： David Michael Fried ,  Philip Charles Danby Hobbs ,  Nancy Carolyn LaBianca ,  Frank Robert Libsch

    发明人： David Michael Fried ,  Philip Charles Danby Hobbs ,  Nancy Carolyn LaBianca ,  Frank Robert Libsch

    IPC分类号： G02B6/10 ,  C23F1/02

    CPC分类号： G02B6/136

    摘要： A photonic waveguide structure includes a first photonic waveguide layer located over a substrate. A sidewall cladding layer is located cladding a sidewall, but not covering a top, of the first photonic waveguide layer. A second photonic waveguide layer may be located upon the top of the sidewall cladding layer while contacting, but not straddling, the first photonic waveguide layer. The sidewall cladding layer protects the first photonic waveguide layer from environmental exposure, thus providing enhanced performance of a photonic waveguide structure. A planarizing sidewall cladding layer allows the fabrication of optical chips with multiple layers of lithographically defined devices.

    摘要翻译： 光子波导结构包括位于衬底上的第一光子波导层。 侧壁包层定位为包覆第一光子波导层的侧壁但不覆盖顶部。 第二光子波导层可以位于侧壁包层的顶部，同时接触但不跨越第一光子波导层。 侧壁包覆层保护第一光子波导层免受环境暴露，从而提供光子波导结构的增强的性能。 平面化的侧壁包层允许制造具有多层光刻定义的器件的光学芯片。