摘要:
An anti-theft system for a motor vehicle includes a portable transponder carrying code information. A stationary transceiver has an oscillator and an oscillating circuit being excited to oscillate by the oscillator at an oscillation being modulated by the transponder in synchronism with the code information. A demodulator demodulates the modulated oscillation of the oscillating circuit. According to one embodiment, the code information is obtained from the demodulated oscillation by sampling the oscillation at least at one predetermined sampling time. An arithmetic unit compares the code information with command code information and transmits an enable signal to a security unit if a match occurs. The modulated oscillation being shifted by a predetermined phase angle is sampled once again if initially no code information is recognized from the demodulator. According to another embodiment, the modulated oscillation containing the code information is sampled at least at two predetermined times being phase-shifted from one another by a predetermined phase angle and the code information is obtained from voltage values detected at the sampling times. The arithmetic unit compares the code information with the command code information and transmits an enable signal to a security unit if a match occurs.
摘要:
A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.
摘要:
A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.
摘要:
A semiconductor device includes a semiconductor chip. External connection pads and further pads are disposed over a surface of the semiconductor chip. Selected ones of the further pads are electrically connected to one another so as to activate selected functions within the semiconductor chip.
摘要:
A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.
摘要:
An integrated circuit arrangement having a metallization layer, an interconnect dielectric, electrically conductive interconnect intermediate material electrically conductive connecting sections, connecting section dielectric between the connecting sections and connecting section intermediate material. The metallization layer contains electrically conductive interconnects between which the interconnect dielectric is disposed. The electrically conductive interconnect intermediate material is arranged between a side area of an interconnect and the interconnect dielectric. The electrically conductive connecting sections in each case form a section of an electrically conductive connection to or from an interconnect and the connecting section dielectric is between the connecting sections. The connecting section intermediate material is arranged in each case between a connecting section and the connecting section dielectric and/or between a connecting section and an interconnect. The interconnect intermediate material and the connecting section intermediate material make contact with one another at at least one connection.
摘要:
An integrated test circuit arrangement is provided that contains integrated test structures, at least one integrated heating element, an integrated detection unit, an integrated supply unit, and a control unit. The integrated detection unit detects at least one physical property for each of the test structures. The integrated supply unit supplies each of the test structures with a current or a voltage in switchable fashion independently of one another. The control unit is connected to outputs of the detection unit on an input side and controls the supply unit dependent on the detection results.
摘要:
Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.
摘要:
Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.
摘要:
Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.