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39 条记录 (耗时 0.044 秒)

    CMP composition for improved oxide removal rate
    3.
    发明申请
    CMP composition for improved oxide removal rate 审中-公开
    CMP组合物，用于提高氧化物去除率

    公开(公告)号：US20050279733A1

    公开(公告)日：2005-12-22

    申请号：US10871774

    申请日：2004-06-18

    申请人： Phillip Carter ,  Robert Vacassy

    发明人： Phillip Carter ,  Robert Vacassy

    IPC分类号： C09G1/02 ,  H01L21/02 ,  H01L21/3105 ,  B44C1/22 ,  C09K13/00

    CPC分类号： C09G1/02 ,  H01L21/31053

    摘要： The invention provides a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, and water. The invention further provides a method for the chemical-mechanical polishing of a substrate with the chemical-mechanical polishing composition and a polishing pad.

    摘要翻译： 本发明提供了一种化学机械抛光组合物，其包含研磨剂，卤化物盐和水。 本发明还提供了一种用化学机械抛光组合物和抛光垫对基材进行化学机械抛光的方法。

    Compositions and methods for CMP of indium tin oxide surfaces
    5.
    发明申请
    Compositions and methods for CMP of indium tin oxide surfaces 审中-公开
    氧化铟锡表面CMP的组成和方法

    公开(公告)号：US20070190789A1

    公开(公告)日：2007-08-16

    申请号：US11706929

    申请日：2007-02-14

    申请人： Phillip Carter ,  Nevin Naguib ,  Fred Sun

    发明人： Phillip Carter ,  Nevin Naguib ,  Fred Sun

    IPC分类号： H01L21/461 ,  C03C15/00

    CPC分类号： H01L31/1884 ,  C09G1/02 ,  C09K3/1463 ,  H01L51/442 ,  H01L51/5206 ,  Y02E10/50

    摘要： The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than about 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than about 5. Preferably, the abrasive has a surface area in the range of about 40 to about 220 m2/g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.

    摘要翻译： 本发明提供化学机械抛光（CMP）组合物和抛光ITO表面的方法。 本发明的组合物包含悬浮在水性载体中的平均粒径不超过约150nm的颗粒状氧化锆或胶体二氧化硅磨料，其优选具有不超过约5的pH。优选地， 研磨剂的表面积在约40至约220平方米/克的范围内。 当用于抛光ITO表面时，本发明的CMP组合物提供可接受的低表面粗糙度，提供清洁且均匀的表面。

    Brake fluid cooling system
    6.
    发明申请
    Brake fluid cooling system 有权
    制动液冷却系统

    公开(公告)号：US20060131952A1

    公开(公告)日：2006-06-22

    申请号：US11015530

    申请日：2004-12-17

    申请人： Del Richardson ,  Harry Richardson ,  Phillip Carter

    发明人： Del Richardson ,  Harry Richardson ,  Phillip Carter

    IPC分类号： B60T13/16

    CPC分类号： F16D65/853 ,  F16D2065/782

    摘要： The brake fluid cooling systems may be used for cooling the brake fluid in a hydraulic brake system. A pump may have an outlet port in fluid communication by a first conduit with a pressure port of a brake wherein there may be a check valve in the first conduit oriented to allow flow from the pump and not to the pump. A bleed port of the brake in fluid communication with a master brake cylinder. The master brake cylinder in fluid communication with an inlet port of the pump.

    摘要翻译： 制动液冷却系统可用于在液压制动系统中冷却制动液。 泵可以具有通过具有制动器的压力端口的第一管道流体连通的出口端口，其中可以在第一管道中存在取决于允许从泵而不是泵流动的止回阀。 与主制动缸流体连通的制动器的排气口。 主制动缸与泵的入口流体连通。

    Compositions and methods for tantalum CMP
    7.
    发明申请
    Compositions and methods for tantalum CMP 有权
    钽CMP的组成和方法

    公开(公告)号：US20060030158A1

    公开(公告)日：2006-02-09

    申请号：US11235765

    申请日：2005-09-26

    申请人： Phillip Carter ,  Jian Zhang ,  Steven Grumbine ,  Francesco Rege Thesauro

    发明人： Phillip Carter ,  Jian Zhang ,  Steven Grumbine ,  Francesco Rege Thesauro

    IPC分类号： B24B1/00 ,  C09K3/14 ,  H01L21/461

    CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  C23F3/06

    摘要： A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.

    摘要翻译： 适用于钽化学机械抛光（CMP）的组合物包括研磨剂，有机氧化剂和用于其的液体载体。 有机氧化剂相对于标准氢电极具有不超过约0.5V的标准氧化还原电位（E 0 SUP 0）。 氧化形式包含至少一个π-共轭环，其包括至少一个直接连接在环上的杂原子。 杂原子可以是N，O，S或它们的组合。 在方法实施方案中，使用包含磨料和相对于标准氢电极不超过约0.7V的E 0有机氧化剂的CMP组合物及其液体载体来抛光 通过用组合物研磨基底的表面，优选借助于抛光垫，将基底的含钽表面。

    Vacuum cleaner current-carrying hose connection system
    8.
    发明申请
    Vacuum cleaner current-carrying hose connection system 有权
    真空吸尘器带电软管接头系统

    公开(公告)号：US20050060838A1

    公开(公告)日：2005-03-24

    申请号：US10665127

    申请日：2003-09-22

    申请人： Scott Walter ,  Phillip Carter ,  Bradley Madu

    发明人： Scott Walter ,  Phillip Carter ,  Bradley Madu

    IPC分类号： A47L9/24 ,  A47L5/38

    CPC分类号： A47L9/246

    摘要： A vacuum cleaner current-carrying hose connection system is disclosed having a female connection end on a first vacuum cleaner current-carrying hose adapted for receiving a male connection end on a second vacuum cleaner current-carrying hose. The male connection has at least two male receptor plugs configured for inserting into female receptor holes in the female connection end. A vacuum cleaner hose connection system is further disclosed having a male connection end that has at least two male receptor plugs for transmitting current, a female connection end having at least two female receptor holes for receiving the male receptor plugs, and the male and female connection ends being rotatably movable, about the longitudinal axis of at least one of the female connection end and the male connection end, between an unengaged position and an engaged position.

    摘要翻译： 公开了一种真空吸尘器电流输送软管连接系统，其在第一真空吸尘器载流软管上具有阴连接端，适于在第二真空吸尘器载流软管上接收阳连接端。 阳连接件具有至少两个配置用于插入阴连接端的阴接收孔中的阳接收器插头。 进一步公开了一种真空吸尘器软管连接系统，其具有阳连接端，该阳连接端具有用于传输电流的至少两个阳接收器插头，具有至少两个用于接纳阳接收插头的阴接收孔的阴连接端，以及阳和阴连接 末端可以在未接合位置和接合位置之间围绕阴连接端和阳连接端中的至少一个的纵向轴线可旋转地移动。

    Compositions for CMP of semiconductor materials
    10.
    发明授权
    Compositions for CMP of semiconductor materials 有权
    半导体材料CMP的组成

    公开(公告)号：US08529680B2

    公开(公告)日：2013-09-10

    申请号：US12854470

    申请日：2010-08-11

    申请人： Francesco De Rege Thesauro ,  Steven Grumbine ,  Phillip Carter ,  Shoutian Li ,  Jian Zhang ,  David Schroeder ,  Ming-Shih Tsai

    发明人： Francesco De Rege Thesauro ,  Steven Grumbine ,  Phillip Carter ,  Shoutian Li ,  Jian Zhang ,  David Schroeder ,  Ming-Shih Tsai

    IPC分类号： C09G1/02 ,  B24D3/02 ,  C09C1/68 ,  C09K3/14

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

    摘要翻译： 本发明提供了用于化学机械抛光的组合物。 组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。 在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位 。 在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。