-
公开(公告)号:US20190043817A1
公开(公告)日:2019-02-07
申请号:US16132315
申请日:2018-09-14
Applicant: QUALCOMM Incorporated
Inventor: Manoj KADADE , Haiyong XU , Ruey Kae ZANG , Yue LI , Xiaonan ZHANG , Christine HAU-RIEGE
IPC: H01L23/00
Abstract: The present disclosure provides packages and methods for fabricating packages. A package may comprise a wafer-level package (WLP) layer comprising a WLP contact and a component within the WLP layer associated with a component depth. A conductive pillar is disposed on the WLP contact and comprises an opposite surface that forms an array pad. The package further comprises a mold over the WLP layer and at least partially surrounding the conductive pillar, wherein the mold compound and the array pad form a substantially planar land grid array (LGA) contact surface that is configured to couple the package to a land grid array. The LGA contact surface has a height that is equal to a selected LGA component height, and the selected LGA component height is equal to a difference between a keepout distance associated with a characteristic of the component within the WLP layer and the component depth.
-
公开(公告)号:US20180211957A1
公开(公告)日:2018-07-26
申请号:US15927539
申请日:2018-03-21
Applicant: QUALCOMM Incorporated
Inventor: Seid Hadi RASOULI , Michael BRUNOLLI , Christine HAU-RIEGE , Mickael Sebtastien Alain MALABRY , Sucheta Kumar HARISH , Prathiba BALASUBRAMANIAN , Kamesh MEDISETTI , Nikolay BOMSHTEIN , Animesh DATTA , Ohsang KWON
IPC: H01L27/092 , H01L27/02
CPC classification number: H01L27/0921 , H01L21/823871 , H01L23/4824 , H01L23/522 , H01L23/528 , H01L27/0207 , H01L27/092 , H01L2924/0002 , H03K17/168 , H03K17/6872 , H01L2924/00
Abstract: A CMOS device with a plurality of PMOS transistors and a plurality of NMOS transistors includes a first interconnect and a second interconnect on an interconnect level connecting a first subset and a second subset of PMOS drains together, respectively. The first and second subsets are different and the first and second interconnect are disconnected on the interconnect level. A third interconnect and a fourth interconnect on the interconnect level connect a first subset and a second subset of the NMOS drains together, respectively. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, fourth interconnects are coupled together through at least one other interconnect level. Additional interconnects on the interconnect level connect the first and third interconnects together, and the second and fourth interconnects together, to provide parallel current paths with a current path through the at least one other interconnect level.
-
公开(公告)号:US20180053740A1
公开(公告)日:2018-02-22
申请号:US15243923
申请日:2016-08-22
Applicant: QUALCOMM Incorporated
Inventor: Manoj KAKADE , Haiyong XU , Ruey Kae ZANG , Yue LI , Xiaonan ZHANG , Christine HAU-RIEGE
IPC: H01L23/00
CPC classification number: H01L24/05 , H01L24/03 , H01L24/06 , H01L24/19 , H01L24/20 , H01L2224/02373 , H01L2224/02379 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/04105 , H01L2224/05024 , H01L2224/05124 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05571 , H01L2224/0603 , H01L2224/06051 , H01L2224/12105 , H01L2224/13147 , H01L2924/07025 , H01L2924/1206 , H01L2924/15313 , H05K1/111 , H05K1/185 , H05K2201/09472
Abstract: The present disclosure provides packages and methods for fabricating packages. A package may comprise a wafer-level package (WLP) layer comprising first and second WLP contacts and first and second conductive pillars disposed on the first and second WLP contacts. Each conductive pillar may comprise a surface opposite the WLP contact that forms an array pad. The array pads may have different sizes. The package may further comprise a mold over the WLP layer and at least partially surrounding the conductive pillars, wherein the mold compound and the first array pads form a substantially planar LGA contact surface that is configured to couple the package to a land grid array.
-
-