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    Plasma confinement apparatus, and method for confining a plasma
    2.
    发明授权
    Plasma confinement apparatus, and method for confining a plasma 有权
    等离子体封隔装置和限制等离子体的方法

    公开(公告)号：US08608851B2

    公开(公告)日：2013-12-17

    申请号：US11546041

    申请日：2006-10-10

    申请人： Tom Ni ,  Jinyuan Chen ,  Qing Qian ,  Yuehong Fu ,  Zhaoyang Xu ,  Xusheng Zhou ,  Ye Wang

    发明人： Tom Ni ,  Jinyuan Chen ,  Qing Qian ,  Yuehong Fu ,  Zhaoyang Xu ,  Xusheng Zhou ,  Ye Wang

    IPC分类号： C23C16/00

    CPC分类号： H05H1/03 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32642

    摘要： A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

    摘要翻译： 描述了一种用于限制等离子体的等离子体限制装置和方法，其包括在本发明的一种形式中，多个电绝缘部件以预定的间隔关系设置，一个相对于其它部件，并且围绕 等离子体处理装置，并且其中在相应的绝缘部件之间限定多个通道; 并且至少一个导电和接地部件形成用于处理区域的电场屏蔽。

    SYSTEM AND METHOD OF SENSING AND REMOVING RESIDUAL CHARGE FROM A PROCESSED WAFER
    3.
    发明申请
    SYSTEM AND METHOD OF SENSING AND REMOVING RESIDUAL CHARGE FROM A PROCESSED WAFER 有权
    从处理过的波形传感和去除残留电荷的系统和方法

    公开(公告)号：US20100271744A1

    公开(公告)日：2010-10-28

    申请号：US12505381

    申请日：2009-07-17

    申请人： Tuqiang NI ,  Jinyuan Chen ,  Ye Wang ,  Ruoxion Du ,  Liang Ouyang

    发明人： Tuqiang NI ,  Jinyuan Chen ,  Ye Wang ,  Ruoxion Du ,  Liang Ouyang

    IPC分类号： H02N13/00

    CPC分类号： H01L21/6833 ,  H01L21/68742 ,  H01L22/14

    摘要： Systems and methods for removing residual charge from a processed wafer are described. Removal of residual charge eliminates de-chucking failure that may break or damage the wafer. Residual charge is removed by applying a reverse polarity discharging DC voltage to an electrode embedded in an electrostatic chuck (ESC) supporting the wafer, and providing an outlet to the residual charge to ground via a lift pin assembly. Lift pin assembly is kept at the same potential with respect to a pedestal of the ESC to avoid sparking during the application of RF power to generate plasma. A residual charge sensor is included to sense and measure the amount of residual charge, so that the parameters of the reverse polarity discharging voltage can be adjusted in a subsequent de-chucking operation.

    摘要翻译： 描述了从处理的晶片去除残余电荷的系统和方法。 去除残留电荷可消除可能破坏或损坏晶片的去夹紧故障。 通过对嵌入在支撑晶片的静电卡盘（ESC）中的电极施加反向极性放电DC电压并且通过升降销组件向剩余电荷提供出口，从而去除残余电荷。 提升销组件相对于ESC的基座保持在相同的电位，以避免在施加RF功率以产生等离子体时产生火花。 包括剩余电荷传感器以感测和测量剩余电荷的量，从而可以在随后的去夹紧操作中调整反极性放电电压的参数。

    System and method of sensing and removing residual charge from a processed wafer
    4.
    发明授权
    System and method of sensing and removing residual charge from a processed wafer 有权
    从处理的晶片中感测和去除残余电荷的系统和方法

    公开(公告)号：US08111499B2

    公开(公告)日：2012-02-07

    申请号：US12505381

    申请日：2009-07-17

    申请人： Tuqiang Ni ,  Jinyuan Chen ,  Ye Wang ,  Ruoxin Du ,  Liang Ouyang

    发明人： Tuqiang Ni ,  Jinyuan Chen ,  Ye Wang ,  Ruoxin Du ,  Liang Ouyang

    IPC分类号： H01L21/683 ,  H01T23/00

    CPC分类号： H01L21/6833 ,  H01L21/68742 ,  H01L22/14

    摘要： Systems and methods for removing residual charge from a processed wafer are described. Removal of residual charge eliminates de-chucking failure that may break or damage the wafer. Residual charge is removed by applying a reverse polarity discharging DC voltage to an electrode embedded in an electrostatic chuck (ESC) supporting the wafer, and providing an outlet to the residual charge to ground via a lift pin assembly. Lift pin assembly is kept at the same potential with respect to a pedestal of the ESC to avoid sparking during the application of RF power to generate plasma. A residual charge sensor is included to sense and measure the amount of residual charge, so that the parameters of the reverse polarity discharging voltage can be adjusted in a subsequent de-chucking operation.

    摘要翻译： 描述了从处理的晶片去除残余电荷的系统和方法。 去除残留电荷可消除可能破坏或损坏晶片的去夹紧故障。 通过对嵌入在支撑晶片的静电卡盘（ESC）中的电极施加反向极性放电DC电压并且通过升降销组件向剩余电荷提供出口，从而去除残余电荷。 提升销组件相对于ESC的基座保持在相同的电位，以避免在施加RF功率以产生等离子体时产生火花。 包括剩余电荷传感器以感测和测量剩余电荷的量，从而可以在随后的去夹紧操作中调整反极性放电电压的参数。

    HIGH FREQUENCY POWER SUPPLY DEVICE AND HIGH FREQUENCY POWER SUPPLYING METHOD
    5.
    发明申请
    HIGH FREQUENCY POWER SUPPLY DEVICE AND HIGH FREQUENCY POWER SUPPLYING METHOD 审中-公开
    高频电源装置和高频供电方法

    公开(公告)号：US20080128087A1

    公开(公告)日：2008-06-05

    申请号：US11943759

    申请日：2007-11-21

    申请人： EIICH HAYANO ,  Takeshi Nakamura ,  Yasunori Maekawa ,  Hiroshi Iizuka ,  Jinyuan Chen

    发明人： EIICH HAYANO ,  Takeshi Nakamura ,  Yasunori Maekawa ,  Hiroshi Iizuka ,  Jinyuan Chen

    IPC分类号： C23F1/08 ,  B05C11/00 ,  H02M5/02

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H05H2001/4645

    摘要： A high frequency power supply device and power supplying method are disclosed, which can rapidly and accurately control power used for generation of plasmas. The device includes a first high frequency power supply, providing power at frequency f1, and a second high frequency power supply providing power at frequency f2 (f1>f2). The first power supply includes: a first high frequency oscillator, which excites the high frequency power at the first frequency and has a variable frequency; a first power amplification block, which amplifies the power of the high frequency oscillator; a heterodyne detection block, which performs heterodyne detection of a reflected wave; and a first control block, which receives a signal after detection of the heterodyne detection block and a traveling wave signal, and controls an oscillating frequency of the first high frequency oscillating block and an output of the first power amplification block.

    摘要翻译： 公开了一种高频电源装置和供电方法，其可以快速且准确地控制用于产生等离子体的功率。 该装置包括以频率f 1提供功率的第一高频电源和以频率f 2（f 1> f 2）提供功率的第二高频电源。 第一电源包括：第一高频振荡器，其以第一频率激发高频功率并具有可变频率; 第一功率放大块，其放大高频振荡器的功率; 外差检测块，其执行反射波的外差检测; 以及第一控制块，其在检测到外差检测块和行波信号之后接收信号，并且控制第一高频振荡块的振荡频率和第一功率放大块的输出。

    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER
    6.
    发明申请
    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
    多站解密反应离子室

    公开(公告)号：US20080011424A1

    公开(公告)日：2008-01-17

    申请号：US11772726

    申请日：2007-07-02

    申请人： Gerald YIN ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald YIN ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： C23F1/00 ,  H05H1/00

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    CAPACITIVE CVD REACTOR AND METHODS FOR PLASMA CVD PROCESS
    8.
    发明申请
    CAPACITIVE CVD REACTOR AND METHODS FOR PLASMA CVD PROCESS 有权
    电解CVD反应器和等离子体CVD过程的方法

    公开(公告)号：US20100126667A1

    公开(公告)日：2010-05-27

    申请号：US12498295

    申请日：2009-07-06

    申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

    发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

    IPC分类号： C23F1/08 ,  C23C16/54

    CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

    摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

    摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。

    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER
    9.
    发明申请
    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
    多站解密反应离子室

    公开(公告)号：US20130008605A1

    公开(公告)日：2013-01-10

    申请号：US13620654

    申请日：2012-09-14

    申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    Multi-station plasma reactor with multiple plasma regions
    10.
    发明授权
    Multi-station plasma reactor with multiple plasma regions 有权
    具有多个等离子体区域的多工位等离子体反应器

    公开(公告)号：US08336488B2

    公开(公告)日：2012-12-25

    申请号：US11961718

    申请日：2007-12-20

    申请人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    发明人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    IPC分类号： C23C16/505

    CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

    摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

    摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。