公开(公告)号：US20180151673A1

公开(公告)日：2018-05-31

申请号：US15878317

申请日：2018-01-23

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L29/15 ,  H01L27/12 ,  H01L29/165 ,  H01L29/04

CPC classification number: H01L29/155 ,  H01L27/1203 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/151 ,  H01L29/161 ,  H01L29/165 ,  H01L29/68 ,  H01L29/7371 ,  H01L29/78 ,  H01L29/7833 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1812 ,  Y02E10/50

Abstract: A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

公开(公告)号：US20220367744A1

公开(公告)日：2022-11-17

申请号：US17877914

申请日：2022-07-30

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L31/109 ,  H01L29/737 ,  H01L27/146 ,  H01L29/08 ,  H01L29/15 ,  H01L29/10 ,  H01L29/06 ,  H01L31/00 ,  H01L29/165 ,  H01L29/66 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/11 ,  H01S5/34

Abstract: An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.

公开(公告)号：US20190043954A1

公开(公告)日：2019-02-07

申请号：US16156735

申请日：2018-10-10

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L29/15 ,  H01L31/18 ,  H01L27/146 ,  H01L27/12 ,  H01L31/101 ,  H01L31/0352 ,  H01L29/78 ,  H01L29/737 ,  H01L29/68 ,  H01L29/165 ,  H01L29/161 ,  H01L29/06 ,  H01L29/04

Abstract: A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

公开(公告)号：US20200343401A1

公开(公告)日：2020-10-29

申请号：US16926734

申请日：2020-07-12

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L31/109 ,  H01L29/737 ,  H01L27/146 ,  H01L29/08 ,  H01L29/15 ,  H01L29/10 ,  H01L29/06 ,  H01L29/165 ,  H01L29/66 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/11 ,  H01S5/34

Abstract: An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.

公开(公告)号：US20170207304A1

公开(公告)日：2017-07-20

申请号：US15472229

申请日：2017-03-28

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L29/15 ,  H01L29/04 ,  H01L27/12 ,  H01L29/165

CPC classification number: H01L29/155 ,  H01L27/1203 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/151 ,  H01L29/161 ,  H01L29/165 ,  H01L29/68 ,  H01L29/7371 ,  H01L29/78 ,  H01L29/7833 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1812 ,  Y02E10/50

Abstract: A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

公开(公告)号：US20180301584A1

公开(公告)日：2018-10-18

申请号：US15936157

申请日：2018-03-26

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L31/109 ,  H01L29/06 ,  H01L31/105 ,  H01L31/0352 ,  H01L29/15 ,  H01L31/11 ,  H01L27/146 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08 ,  H01L29/165 ,  H01S5/34

CPC classification number: H01L31/109 ,  H01L27/14601 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14681 ,  H01L29/0603 ,  H01L29/0653 ,  H01L29/0821 ,  H01L29/0847 ,  H01L29/1004 ,  H01L29/155 ,  H01L29/165 ,  H01L29/66977 ,  H01L29/7371 ,  H01L31/035254 ,  H01L31/105 ,  H01L31/1105 ,  H01S5/3427

Abstract: An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.

公开(公告)号：US20160197146A1

公开(公告)日：2016-07-07

申请号：US15072145

申请日：2016-03-16

Applicant: Quantum Semiconductor LLC

Inventor： Carlos Jorge R.P. Augusto

IPC: H01L29/15 ,  H01L29/04 ,  H01L29/161

CPC classification number: H01L29/155 ,  H01L27/1203 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/151 ,  H01L29/161 ,  H01L29/165 ,  H01L29/68 ,  H01L29/7371 ,  H01L29/78 ,  H01L29/7833 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1812 ,  Y02E10/50

Abstract: A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

Abstract translation: 包含IV族元素的超晶格单元重复多次以形成超晶格。 每个超晶格单元具有彼此平行的多个有序原子平面。 超晶格单元中的至少两个原子平面具有不同的化学成分。 超晶格单元中的一个或多个原子平面选自碳，锡和铅中的一种或多种组分。 这些超晶格形成各种应用，包括但不限于晶体管，光传感器和光源。