公开(公告)号：US07078788B2

公开(公告)日：2006-07-18

申请号：US10964238

申请日：2004-10-13

申请人： Quat T. Vu ,  Jian Li ,  Steven Towle

发明人： Quat T. Vu ,  Jian Li ,  Steven Towle

IPC分类号： H05K3/34 ,  H05K7/02 ,  H01L23/34 ,  H01L23/28

CPC分类号： H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K1/185 ,  H05K3/4602 ,  H01L2224/82 ,  H01L2924/00

摘要： A microelectronic substrate including at least one microelectronic device disposed within an opening in a microelectronic substrate core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic devices, or a plurality microelectronic devices encapsulated without the microelectronic substrate core. At least one conductive via extended through the substrate, which allows electrical communication between opposing sides of the substrate. Interconnection layers of dielectric materials and conductive traces are then fabricated on the microelectronic device, the encapsulation material, and the microelectronic substrate core (if present) to form the microelectronic substrate.

公开(公告)号：US06734534B1

公开(公告)日：2004-05-11

申请号：US09692908

申请日：2000-10-19

申请人： Quat T. Vu ,  Jian Li ,  Steven Towle

发明人： Quat T. Vu ,  Jian Li ,  Steven Towle

IPC分类号： H05K334

CPC分类号： H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/19 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K1/185 ,  H05K3/4602 ,  H01L2224/82 ,  H01L2924/00012

摘要： A microelectronic substrate including at least one microelectronic die disposed within an opening in a microelectronic substrate core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic dice, or a plurality microelectronic dice encapsulated without the microelectronic substrate core. Interconnection layers of dielectric materials and conductive traces are then fabricated on the microelectronic die, the encapsulation material, and the microelectronic substrate core (if present) to form the microelectronic substrate.

摘要翻译： 微电子衬底包括设置在微电子衬底芯中的开口内的至少一个微电子管芯，其中封装材料设置在不被微电子管芯占据的开口的部分内，或者多个微电子管芯封装而不具有微电子衬底芯。 然后在微电子管芯，封装材料和微电子衬底芯（如果存在）上制造介电材料和导电迹线的互连层以形成微电子衬底。

公开(公告)号：US06825063B2

公开(公告)日：2004-11-30

申请号：US10612744

申请日：2003-06-30

申请人： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Chun Mu

发明人： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Chun Mu

IPC分类号： H01L2144

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L23/532 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19041 ,  Y10T29/4935 ,  H01L2224/96 ,  H01L2224/82 ,  H01L2924/00

摘要： A microelectronic package including a microelectronic die disposed within an opening in a microelectronic packaging core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic die. Build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die, the encapsulant material, and the microelectronic package core to form the microelectronic package.

摘要翻译： 一种微电子封装，包括设置在微电子封装芯中的开口内的微电子管芯，其中封装材料设置在不被微电子管芯占据的开口部分内。 然后在微电子管芯，密封剂材料和微电子封装芯上制造介电材料和导电迹线的堆积层以形成微电子封装。

公开(公告)号：US06586822B1

公开(公告)日：2003-07-01

申请号：US09658819

申请日：2000-09-08

申请人： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Xiao-Chun Mu

发明人： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Xiao-Chun Mu

IPC分类号： H01L2302

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L23/532 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19041 ,  Y10T29/4935 ,  H01L2224/96 ,  H01L2224/82 ,  H01L2924/00

摘要： A microelectronic package including a microelectronic die disposed within an opening in a microelectronic packaging core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic die. Build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die, the encapsulant material, and the microelectronic package core to form the microelectronic package.

摘要翻译： 一种微电子封装，包括设置在微电子封装芯中的开口内的微电子管芯，其中封装材料设置在不被微电子管芯占据的开口部分内。 然后在微电子管芯，密封剂材料和微电子封装芯上制造介电材料和导电迹线的堆积层以形成微电子封装。

公开(公告)号：US20050062173A1

公开(公告)日：2005-03-24

申请号：US10964238

申请日：2004-10-13

申请人： Quat Vu ,  Jian Li ,  Steven Towle

发明人： Quat Vu ,  Jian Li ,  Steven Towle

IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/31 ,  H01L23/538 ,  H05K1/18 ,  H05K3/46 ,  H01L21/48 ,  H01L29/40

CPC分类号： H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K1/185 ,  H05K3/4602 ,  H01L2224/82 ,  H01L2924/00

摘要： A microelectronic substrate including at least one microelectronic device disposed within an opening in a microelectronic substrate core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic devices, or a plurality microelectronic devices encapsulated without the microelectronic substrate core. At least one conductive via extended through the substrate, which allows electrical communication between opposing sides of the substrate. Interconnection layers of dielectric materials and conductive traces are then fabricated on the microelectronic device, the encapsulation material, and the microelectronic substrate core (if present) to form the microelectronic substrate.

摘要翻译： 微电子衬底包括设置在微电子衬底芯中的开口内的至少一个微电子器件，其中封装材料设置在未被微电子器件占据的开口的部分内，或者在没有微电子衬底芯的情况下封装的多个微电子器件。 延伸穿过衬底的至少一个导电通孔，其允许衬底的相对侧之间的电连通。 然后在微电子器件，封装材料和微电子衬底芯（如果存在）上制造介电材料和导电迹线的互连层以形成微电子衬底。

公开(公告)号：US11441521B2

公开(公告)日：2022-09-13

申请号：US16627309

申请日：2017-08-15

申请人： VOLVO TRUCK CORPORATION ,  Jian Li ,  John Lowe

发明人： Jian Li ,  John Lowe

IPC分类号： F02M26/71 ,  F02M26/68 ,  F02M26/16 ,  F02M26/21 ,  F02M26/53 ,  F02M26/69

摘要： A valve for m exhaust gas recirculation Mae in an engine includes a first barrel connectable to a first group of cylinders, a second barrel connectable to a second group of cylinders, and a center barrel between the first and second barrels and connectable to an intake of the engine, A poppet valve with two valve heads mounted on a valve stem is provided to open and close openings between the first and second barrels, with one of the valve beads of the poppet valve opening into the center barrel Vanes are provided in the center barrel to direct flow from the opening by the valve bead that opens into the center barrel toward the outlet opening.

公开(公告)号：US10110693B2

公开(公告)日：2018-10-23

申请号：US13400527

申请日：2012-02-20

申请人： Wenzhe Zhou ,  Jim Zhao ,  Jian Li

发明人： Wenzhe Zhou ,  Jim Zhao ,  Jian Li

IPC分类号： G06F15/167 ,  H04L29/08 ,  H04L29/06 ,  H04L12/801

摘要： Various methods and communications devices to reduce a bandwidth utilization of a backhaul link in a wireless communications system are provided. By way of example, bandwidth utilization is reduced by relegating the compression of data to the downlink transmission, storing only reference keys in the cache of the transmitting device, and taking advantage of an asymmetrical cache structure between communicating devices. Support is provided for a user equipment to move from one node to another node.

公开(公告)号：USD829389S1

公开(公告)日：2018-09-25

申请号：US29598111

申请日：2017-03-23

申请人： Zhangli Lan ,  Jian Li ,  Yukun Yang ,  Chunyan Yang

设计人： Zhangli Lan ,  Jian Li ,  Yukun Yang ,  Chunyan Yang

公开(公告)号：US09947770B2

公开(公告)日：2018-04-17

申请号：US12015723

申请日：2008-01-17

申请人： Jian Li ,  Kuo-In Chen ,  Kyle Terril

发明人： Jian Li ,  Kuo-In Chen ,  Kyle Terril

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66734 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7813

摘要： A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region. The MOSFET also includes a plurality of body contact regions disposed in the each body region adjacent the plurality of source regions, a plurality of source/body contact spacers disposed between the plurality of gate insulator regions above the recessed mesas, a source/body contact disposed above the source/body contact spacers, and a plurality of source/body contact plugs disposed between the source/body contact spacers and coupling the source/body contact to the plurality of body contact regions and the plurality of source regions.

公开(公告)号：US09648909B2

公开(公告)日：2017-05-16

申请号：US14814093

申请日：2015-07-30

申请人： SHENZHEN SMOORE TECHNOLOGY LIMITED ,  Hongming Zhou ,  Jian Li

发明人： Hongming Zhou ,  Qinglu Xia ,  Kaiwen Xiao ,  Jian Li ,  Pingkun Liu

IPC分类号： C04B38/00 ,  A24F47/00 ,  B05B17/00 ,  B28B1/24 ,  B28B11/24 ,  C03C11/00

CPC分类号： A24F47/008 ,  B05B17/00 ,  B28B1/24 ,  B28B11/243 ,  C03C11/00

摘要： The present invention relates to a manufacturing method of a porous ceramic material, which includes the following steps: mixing a silicate material and a porogen to obtain a premix, wherein the silicate material includes sodium silicate and other compounds being at least one selected from the group consisting of oxides, nitrides, and carbides; drying the premix to obtain a silicate aggregate; mixing the silicate aggregate and an adhesive to obtain an injection molding material, wherein in a weight percentage, the silicate aggregate is in the range of from 50% to 60%, the adhesive is in the range of from 40% to 50%; injection molding the injection molding material to obtain a green body; and degumming and calcinating the green body successively to obtain the porous ceramic material. In the aforementioned manufacturing method of the porous ceramic material, the space-holder method is combined with the injection molding method, such that the obtained porous ceramic material has a high porosity, controllable pore sizes and good mechanical properties. In addition, compared with the dry pressing process, the use of the injection molding process can significantly improve the production efficiency, and is suitable for large-scale production.