公开(公告)号：US09601351B2

公开(公告)日：2017-03-21

申请号：US14552954

申请日：2014-11-25

Applicant: Renesas Electronics Corporation

Inventor： Yuki Fukui ,  Hiroaki Katou

IPC: H01L21/324 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/092

CPC classification number: H01L21/324 ,  H01L21/823487 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/41741 ,  H01L29/66666 ,  H01L29/7813 ,  H01L29/7815 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The generation of a variation in properties of vertical transistors is restrained. A vertical MOS transistor is formed in a semiconductor substrate. A first interlayer dielectric film and a first source wiring are formed over the front surface of the substrate. The first source wiring is formed over the first interlayer dielectric film, and is overlapped with the vertical MOS transistor as viewed in plan. Contacts are buried in the first interlayer dielectric film. Through the contacts, an n-type source layer of vertical MOS transistor is coupled with the first source wiring. Openings are made in the first source wiring.

公开(公告)号：US09184285B2

公开(公告)日：2015-11-10

申请号：US13851875

申请日：2013-03-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hiroaki Katou ,  Hiroyoshi Kudou ,  Taro Moriya ,  Satoshi Uchiya

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/45 ,  H01L29/06

CPC classification number: H01L29/7827 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0615 ,  H01L29/0865 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/7811 ,  H01L29/7813

Abstract: Trenches are formed in a base layer and extend parallel to each other. A gate insulating film is formed on the inner wall of each of multiple trenches. A gate electrode GE is buried in each of the trenches. The source layer is formed in the base layer to a depth less than the base layer. The source layer is disposed between each of the trenches. A second conduction type high concentration layer is formed between the source layer and the trench in a plan view. The trench, the source layer, and the second conduction type high concentration are arranged in this order repetitively in a plan view. One lateral side of the trench faces the source layer and the other lateral side of the trench faces the second conduction type high concentration layer.

Abstract translation: 沟槽形成在基层中并且彼此平行延伸。 在多个沟槽的每个的内壁上形成栅极绝缘膜。 栅电极GE被埋在每个沟槽中。 源层在基底层中形成到比基底层更深的深度。 源层设置在每个沟槽之间。 在平面图中，在源极层和沟槽之间形成第二导电型高浓度层。 沟槽，源极层和第二导电型高浓度以平面图重复排列。 沟槽的一个侧面面向源极层，沟槽的另一个侧面面向第二导电型高浓度层。

公开(公告)号：US09082835B2

公开(公告)日：2015-07-14

申请号：US14196986

申请日：2014-03-04

Applicant: Renesas Electronics Corporation

Inventor： Yuki Fukui ,  Hiroaki Katou

IPC: H01L21/336 ,  H01L29/778 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739 ,  H01L27/088 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/092

CPC classification number: H01L29/7827 ,  H01L21/823487 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor device includes forming a recess over a surface of an n-type semiconductor substrate, forming a gate insulation film over an inner wall and a bottom face of the recess, embedding a gate electrode into the recess, forming a p-type base layer in the surface layer of the substrate so as to be shallower than the recess; and forming an n-type source layer in the p-type base layer so as to be shallower than the p-type base layer. The impurity profile of the p-type base layer in a thickness direction includes a second peak being located closer to a bottom face side of the substrate than the first peak and being higher than the first peak, and a third peak located between the first peak and the second peak by implanting impurity ions three times or more at ion implantation energies different from each other.

Abstract translation: 一种制造半导体器件的方法包括在n型半导体衬底的表面上形成凹陷，在凹槽的内壁和底面上形成栅极绝缘膜，将栅电极嵌入到凹部中，形成p 型基底层，以比该凹槽浅; 在p型基底层中形成n型源极层，使其比p型基底层浅。 p型基底层在厚度方向上的杂质分布包括第二峰位于比第一峰更靠近衬底的底面侧并高于第一峰，第三峰位于第一峰 并且通过在彼此不同的离子注入能量下注入杂质离子三次或更多的第二峰。

公开(公告)号：US09029953B2

公开(公告)日：2015-05-12

申请号：US14061355

申请日：2013-10-23

Applicant: Renesas Electronics Corporation

Inventor： Hiroaki Katou ,  Taro Moriya ,  Satoshi Uchiya ,  Hiroyoshi Kudou

IPC: H01L29/66 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7831

Abstract: A semiconductor device includes a base region of a second conduction type provided over a drain region of a first conduction type, an outer peripheral well region of a second conduction type provided to cover the outer peripheral end of the base region and having an impurity concentration lower than that of the base region, a buried electrode buried in the semiconductor substrate not to overlap the outer peripheral well region, plural gate electrodes connected to the buried electrode and buried in the substrate such that each of them is adjacent to a source region, a gate interconnect provided over the substrate to overlap a portion of the outer peripheral well region in a plan view and connected to the buried electrode, and a grounding electrode provided over the substrate and connected to a portion of the outer peripheral well region not overlapping the gate interconnect in a plan view.

Abstract translation: 半导体器件包括设置在第一导电类型的漏极区域上的第二导电类型的基极区域，设置成覆盖基极区域的外周端并且具有较低的杂质浓度的第二导电类型的外围阱区域 与基极区相比埋入半导体衬底中的不与外围阱区重叠的埋入电极，与埋入电极连接并埋设在基板中的多个栅极，使得它们各自与源极区相邻， 栅极互连设置在所述衬底上以在平面图中与所述外围周边阱区域的一部分重叠并连接到所述掩埋电极，以及接地电极，设置在所述衬底上并连接到所述外部周边阱区域的不与所述栅极重叠的部分 在平面图中互连。

公开(公告)号：US09362396B2

公开(公告)日：2016-06-07

申请号：US14733566

申请日：2015-06-08

Applicant: Renesas Electronics Corporation

Inventor： Yuki Fukui ,  Hiroaki Katou

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739 ,  H01L27/088 ,  H01L29/778 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/092

CPC classification number: H01L29/7827 ,  H01L21/823487 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor device, includes forming a recess over a surface of an n-type semiconductor substrate, forming a gate insulation film over an inner wall and a bottom face of the recess, embedding a gate electrode into the recess, forming a p-type base layer in a surface layer of the semiconductor substrate so as to be shallower than the recess, and forming an n-type source layer in the p-type base layer so as to be shallower than the p-type base layer. An impurity profile of the p-type base layer in a thickness direction includes a first peak, a second peak being located closer to a bottom face side of the semiconductor substrate than the first peak and being higher than the first peak, and a third peak located between the first peak and the second peak by implanting impurity ions three times or more at ion implantation energies different from each other in the forming of the p-type base layer.

Abstract translation: 一种半导体器件的制造方法，包括在n型半导体衬底的表面上形成凹部，在所述凹部的内壁和底面上形成栅极绝缘膜，将栅极电极嵌入到所述凹部中，形成 在半导体衬底的表面层中形成p型基底层，使其比凹槽浅，并且在p型基底层中形成比p型基底层浅的n型源极层。 p型基底层的厚度方向的杂质分布包括第一峰，位于比第一峰更靠近半导体衬底的底面的第二峰，高于第一峰，第三峰 通过在形成p型基底层时彼此不同的离子注入能量下注入杂质离子三次以上，位于第一峰值和第二峰值之间。

公开(公告)号：US08803226B2

公开(公告)日：2014-08-12

申请号：US13766148

申请日：2013-02-13

Applicant: Renesas Electronics Corporation

Inventor： Hiroaki Katou ,  Taro Moriya ,  Hiroyoshi Kudou ,  Satoshi Uchiya

IPC: H01L29/78

CPC classification number: H01L29/66666 ,  H01L27/0629 ,  H01L29/4236 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/78 ,  H01L29/7827

Abstract: A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench through a gate insulating film. A dummy gate electrode is formed in the second trench through a dummy gate insulating film. A cathode n+-type semiconductor region and an anode p-type semiconductor region are formed in the semiconductor substrate and the second trench is formed so as to surround the n+-type semiconductor region in a planar view. A part of the anode p-type semiconductor region is formed directly below the n+-type semiconductor region, so that a PN junction is formed between the part of the anode p-type semiconductor region and the n+-type semiconductor region. Thereby a diode is formed. The dummy gate electrode is electrically coupled to one of an anode and a cathode.

Abstract translation: 沟槽栅型MISFET和二极管形成在半导体衬底中。 第一和第二沟槽形成在半导体衬底中。 栅电极通过栅极绝缘膜形成在第一沟槽中。 虚拟栅电极通过虚拟栅极绝缘膜形成在第二沟槽中。 阴极n +型半导体区域和阳极p型半导体区域形成在半导体衬底中，并且第二沟槽形成为在平面图中包围n +型半导体区域。 阳极p型半导体区域的一部分直接形成在n +型半导体区域正下方，从而在阳极p型半导体区域和n +型半导体区域的部分之间形成PN结。 从而形成二极管。 虚拟栅电极电耦合到阳极和阴极之一。

公开(公告)号：US20140187005A1

公开(公告)日：2014-07-03

申请号：US14196986

申请日：2014-03-04

Applicant: Renesas Electronics Corporation

Inventor： Yuki FUKUI ,  Hiroaki Katou

IPC: H01L29/778

CPC classification number: H01L29/7827 ,  H01L21/823487 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor device includes forming a recess over a surface of an n-type semiconductor substrate, forming a gate insulation film over an inner wall and a bottom face of the recess, embedding a gate electrode into the recess, forming a p-type base layer in the surface layer of the substrate so as to be shallower than the recess; and forming an n-type source layer in the p-type base layer so as to be shallower than the p-type base layer. The impurity profile of the p-type base layer in a thickness direction includes a second peak being located closer to a bottom face side of the substrate than the first peak and being higher than the first peak, and a third peak located between the first peak and the second peak by implanting impurity ions three times or more at ion implantation energies different from each other.

Abstract translation: 一种制造半导体器件的方法包括在n型半导体衬底的表面上形成凹陷，在凹槽的内壁和底面上形成栅极绝缘膜，将栅电极嵌入到凹部中，形成p 型基底层，以比该凹槽浅; 在p型基底层中形成n型源极层，使其比p型基底层浅。 p型基底层在厚度方向上的杂质分布包括第二峰位于比第一峰更靠近衬底的底面侧并高于第一峰，第三峰位于第一峰 并且通过在彼此不同的离子注入能量下注入杂质离子三次或更多的第二峰。

公开(公告)号：US20150270392A1

公开(公告)日：2015-09-24

申请号：US14733566

申请日：2015-06-08

Applicant: Renesas Electronics Corporation

Inventor： Yuki FUKUI ,  Hiroaki Katou

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L21/823487 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor device, includes forming a recess over a surface of an n-type semiconductor substrate, forming a gate insulation film over an inner wall and a bottom face of the recess, embedding a gate electrode into the recess, forming a p-type base layer in a surface layer of the semiconductor substrate so as to be shallower than the recess, and forming an n-type source layer in the p-type base layer so as to be shallower than the p-type base layer. An impurity profile of the p-type base layer in a thickness direction includes a first peak, a second peak being located closer to a bottom face side of the semiconductor substrate than the first peak and being higher than the first peak, and a third peak located between the first peak and the second peak by implanting impurity ions three times or more at ion implantation energies different from each other in the forming of the p-type base layer.

Abstract translation: 一种半导体器件的制造方法，包括在n型半导体衬底的表面上形成凹部，在所述凹部的内壁和底面上形成栅极绝缘膜，将栅极电极嵌入到所述凹部中，形成 在半导体衬底的表面层中形成p型基底层，使其比凹槽浅，并且在p型基底层中形成比p型基底层浅的n型源极层。 p型基底层的厚度方向的杂质分布包括第一峰，位于比第一峰更靠近半导体衬底的底面的第二峰，高于第一峰，第三峰 通过在形成p型基底层时彼此不同的离子注入能量下注入杂质离子三次以上，位于第一峰值和第二峰值之间。

公开(公告)号：US08969150B2

公开(公告)日：2015-03-03

申请号：US14324632

申请日：2014-07-07

Applicant: Renesas Electronics Corporation

Inventor： Hiroaki Katou ,  Taro Moriya ,  Hiroyoshi Kudou ,  Satoshi Uchiya

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66666 ,  H01L27/0629 ,  H01L29/4236 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/78 ,  H01L29/7827

Abstract: A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench through a gate insulating film. A dummy gate electrode is formed in the second trench through a dummy gate insulating film. A cathode n+-type semiconductor region and an anode p-type semiconductor region are formed in the semiconductor substrate and the second trench is formed so as to surround the n+-type semiconductor region in a planar view. A part of the anode p-type semiconductor region is formed directly below the n+-type semiconductor region, so that a PN junction is formed between the part of the anode p-type semiconductor region and the n+-type semiconductor region. Thereby a diode is formed. The dummy gate electrode is electrically coupled to one of an anode and a cathode.

Abstract translation: 沟槽栅型MISFET和二极管形成在半导体衬底中。 第一和第二沟槽形成在半导体衬底中。 栅电极通过栅极绝缘膜形成在第一沟槽中。 虚拟栅电极通过虚拟栅极绝缘膜形成在第二沟槽中。 阴极n +型半导体区域和阳极p型半导体区域形成在半导体衬底中，并且第二沟槽形成为在平面图中包围n +型半导体区域。 阳极p型半导体区域的一部分直接形成在n +型半导体区域正下方，从而在阳极p型半导体区域和n +型半导体区域的部分之间形成PN结。 从而形成二极管。 虚拟栅电极电耦合到阳极和阴极之一。