公开(公告)号：US20130228907A1

公开(公告)日：2013-09-05

申请号：US13768509

申请日：2013-02-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takuya NAKAJO ,  Masaki TAMURA ,  Yasushi TAKAHASHI ,  Keiichi OKAWA ,  Ryoichi KAJIWARA ,  Sigehisa MOTOWAKI ,  Hiroshi HOZOUJI

IPC: H01L21/56 ,  H01L23/28

CPC classification number: H01L21/56 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37147 ,  H01L2224/40249 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/4903 ,  H01L2224/49171 ,  H01L2224/49505 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/8392 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/8492 ,  H01L2224/8592 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01082

Abstract: Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin.A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.

Abstract translation: 常规的表面粗糙化电镀技术不能总是提高引线框和镀膜之间的粘合性，并且取决于用于表面粗糙化电镀的材料。 通过蚀刻的常规表面粗糙化技术只能用于由有限材料制成的引线框架。 因此，在诸如引线框架的金属构件和密封树脂之间不能实现改进的附着。 根据一个实施例的半导体器件的制造方法是使用已经经过基材的合金化处理的锌引线框架和其表面上镀Zn的金属构件进行树脂密封。