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    Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
    1.
    发明授权
    Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries 有权
    用BC13基蚀刻化学法在高温下蚀刻具有高含氧层的高K电介质

    公开(公告)号：US08722547B2

    公开(公告)日：2014-05-13

    申请号：US11736562

    申请日：2007-04-17

    申请人： Radhika Mani ,  Nicolas Gani ,  Wei Liu ,  Meihua Shen ,  Shashank C. Deshmukh

    发明人： Radhika Mani ,  Nicolas Gani ,  Wei Liu ,  Meihua Shen ,  Shashank C. Deshmukh

    IPC分类号： H01L21/31 ,  H01L21/311 ,  H01L29/51

    CPC分类号： H01L21/31116 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： Wafers having a high K dielectric layer and an oxide or nitride containing layer are etched in an inductively coupled plasma processing chamber by applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 100° C. and 350° C., and etching the wafer with a selectivity of high K dielectric to oxide or nitride greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a reactive ion etch processing chamber by applying a bias power to the wafer, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a an inductively coupled plasma processing chamber by applying a bias power to the wafer, applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1.

    摘要翻译： 在电感耦合等离子体处理室中蚀刻具有高K电介质层和含氧化物或氮化物层的晶片，通过施加源电力来产生电感耦合等离子体，将包含BCl 3的气体引入室中，设定晶片的温度 在100℃至350℃之间，并且以大于10:1的氧化物或氮化物的高K电介质的选择性蚀刻晶片。 具有氧化物层和氮化物层的晶片通过向晶片施加偏置功率而在反应离子蚀刻处理室中被蚀刻，将包括BCl 3的气体引入室中，将晶片的温度设定在20℃至 并且以大于10:1的氧化物至氮化物选择性蚀刻晶片。 在电感耦合等离子体处理室中蚀刻具有氧化物层和氮化物层的晶片，通过向晶片施加偏置功率，施加源电力以产生电感耦合等离子体，将包括BCl 3的气体引入室中， 晶片的温度在20℃和200℃之间，并且以大于10:1的氧化物至氮化物选择性蚀刻晶片。

    ETCHING OF SiO2 WITH HIGH SELECTIVITY TO Si3N4 AND ETCHING METAL OXIDES WITH HIGH SELECTIVITY TO SiO2 AT ELEVATED TEMPERATURES WITH BCl3 BASED ETCH CHEMISTRIES
    2.
    发明申请
    ETCHING OF SiO2 WITH HIGH SELECTIVITY TO Si3N4 AND ETCHING METAL OXIDES WITH HIGH SELECTIVITY TO SiO2 AT ELEVATED TEMPERATURES WITH BCl3 BASED ETCH CHEMISTRIES 有权
    对具有高选择性的Si 3 N 4的SiO 2和具有高选择性的金属氧化物的蚀刻在基于BCl3的蚀刻化学的高温下

    公开(公告)号：US20070249182A1

    公开(公告)日：2007-10-25

    申请号：US11736562

    申请日：2007-04-17

    申请人： Radhika Mani ,  Nicolas Gani ,  Wei Liu ,  Meihua Shen ,  Shashank C. Deshmukh

    发明人： Radhika Mani ,  Nicolas Gani ,  Wei Liu ,  Meihua Shen ,  Shashank C. Deshmukh

    IPC分类号： H01L21/302 ,  H01L21/31

    CPC分类号： H01L21/31116 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： Wafers having a high K dielectric layer and an oxide or nitride containing layer are etched in an inductively coupled plasma processing chamber by applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 100° C. and 350° C., and etching the wafer with a selectivity of high K dielectric to oxide or nitride greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a reactive ion etch processing chamber by applying a bias power to the wafer, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1. Wafers having an oxide layer and a nitride layer are etched in a an inductively coupled plasma processing chamber by applying a bias power to the wafer, applying a source power to generate an inductively coupled plasma, introducing into the chamber a gas including BCl3, setting the temperature of the wafer to be between 20° C. and 200° C., and etching the wafer with an oxide to nitride selectivity greater than 10:1.

    摘要翻译： 具有高K电介质层和含氧化物或氮化物的层的晶片在电感耦合等离子体处理室中被蚀刻，通过施加源功率以产生电感耦合等离子体，将包含BCl 3 >，将晶片的温度设置在100℃和350℃之间，并且以大于10:1的氧化物或氮化物的高K电介质的选择性蚀刻晶片。 具有氧化物层和氮化物层的晶片通过向晶片施加偏置功率而在反应离子蚀刻处理室中进行蚀刻，将包含BCl 3 3的气体引入室中，设定晶片的温度 在20℃和200℃之间，并且以大于10:1的氧化物至氮化物选择性蚀刻晶片。 在电感耦合等离子体处理室中蚀刻具有氧化物层和氮化物层的晶片，通过向晶片施加偏置功率，施加源电力以产生电感耦合等离子体，将包括BCI 3，将晶片的温度设定在20℃至200℃之间，并以大于10:1的氧化物至氮化物选择性蚀刻晶片。

    Shallow trench isolation etch process
    3.
    发明授权
    Shallow trench isolation etch process 失效
    浅沟槽隔离蚀刻工艺

    公开(公告)号：US08133817B2

    公开(公告)日：2012-03-13

    申请号：US12325220

    申请日：2008-11-30

    申请人： Hiroki Sasano ,  Meihua Shen ,  Radhika Mani ,  Sunil Srinivasan ,  Daehee Weon ,  Nicolas Gani ,  Shashank Deshmukh ,  Anisul Khan

    发明人： Hiroki Sasano ,  Meihua Shen ,  Radhika Mani ,  Sunil Srinivasan ,  Daehee Weon ,  Nicolas Gani ,  Shashank Deshmukh ,  Anisul Khan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3065 ,  H01L21/76224

    摘要： Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or more STI structures. The substrate may be etched using a plasma formed from a process gas mixture to form one or more STI structures on the substrate, wherein the process gas mixture comprises a fluorine-containing gas and either a fluorocarbon-containing gas or a hydrofluorocarbon-containing gas.

    摘要翻译： 本文提供了制造一个或多个浅沟槽隔离（STI）结构的方法。 在一些实施例中，用于制造一个或多个浅沟槽隔离（STI）结构的方法可以包括提供具有设置在其上以限定一个或多个STI结构的图案化掩模层的衬底。 可以使用由工艺气体混合物形成的等离子体来蚀刻衬底，以在衬底上形成一个或多个STI结构，其中工艺气体混合物包含含氟气体和含氟烃气体或含氢氟烃的气体。

    SHALLOW TRENCH ISOLATION ETCH PROCESS
    4.
    发明申请
    SHALLOW TRENCH ISOLATION ETCH PROCESS 失效
    SHOWOW TRENCH隔离蚀刻工艺

    公开(公告)号：US20090170333A1

    公开(公告)日：2009-07-02

    申请号：US12325220

    申请日：2008-11-30

    申请人： Hiroki Sasano ,  Meihua Shen ,  Radhika Mani ,  Sunil Srinivasan ,  Daehee Weon ,  Nicolas Gani ,  Shashank Deshmukh ,  Anisul Khan

    发明人： Hiroki Sasano ,  Meihua Shen ,  Radhika Mani ,  Sunil Srinivasan ,  Daehee Weon ,  Nicolas Gani ,  Shashank Deshmukh ,  Anisul Khan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3065 ,  H01L21/76224

    摘要： Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or more STI structures. The substrate may be etched using a plasma formed from a process gas mixture to form one or more STI structures on the substrate, wherein the process gas mixture comprises a fluorine-containing gas and either a fluorocarbon-containing gas or a hydrofluorocarbon-containing gas.

    摘要翻译： 本文提供了制造一个或多个浅沟槽隔离（STI）结构的方法。 在一些实施例中，用于制造一个或多个浅沟槽隔离（STI）结构的方法可以包括提供具有设置在其上以限定一个或多个STI结构的图案化掩模层的衬底。 可以使用由工艺气体混合物形成的等离子体来蚀刻衬底，以在衬底上形成一个或多个STI结构，其中工艺气体混合物包含含氟气体和含氟烃气体或含氢氟烃的气体。

    METHODS FOR IN-SITU CHAMBER CLEAN UTILIZED IN AN ETCHING PROCESSING CHAMBER
    7.
    发明申请
    METHODS FOR IN-SITU CHAMBER CLEAN UTILIZED IN AN ETCHING PROCESSING CHAMBER 有权
    在蚀刻加工室中使用的现场室清洁方法

    公开(公告)号：US20130087174A1

    公开(公告)日：2013-04-11

    申请号：US13614365

    申请日：2012-09-13

    申请人： Noel Sun ,  Meihua Shen ,  Nicolas Gani ,  Chung Nang Liu ,  Radhika C. Mani

    发明人： Noel Sun ,  Meihua Shen ,  Nicolas Gani ,  Chung Nang Liu ,  Radhika C. Mani

    IPC分类号： B08B5/00

    CPC分类号： B08B5/00 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32449 ,  H01J37/32862 ,  Y10S438/905

    摘要： Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.

    摘要翻译： 本发明的实施例包括用于半导体器件中用于栅极结构制造工艺的等离子体处理室的原位室干洗的方法。 在一个实施例中，一种用于原位室干洗的方法包括在不存在设置在其中的基板的情况下将包括至少含硼气体的第一清洁气体供应到处理室中，提供至少包含含卤素气体的第二清洁气体 在没有基板的情况下进入处理室，并且在没有基板的情况下将至少包含含氧气体的第三清洁气体供应到处理室中。

    MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM
    8.
    发明申请
    MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
    在半导体处理系统中使用的多个端口气体注入系统

    公开(公告)号：US20090221149A1

    公开(公告)日：2009-09-03

    申请号：US12039262

    申请日：2008-02-28

    申请人： Edward P. Hammond, IV ,  Rodolfo P. Belen ,  Nicolas Gani ,  Jing Zou ,  Meihua Shen ,  Michael D. Willwerth ,  David Palagashvili

    发明人： Edward P. Hammond, IV ,  Rodolfo P. Belen ,  Nicolas Gani ,  Jing Zou ,  Meihua Shen ,  Michael D. Willwerth ,  David Palagashvili

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32449 ,  H01J37/3244

    摘要： An apparatus having a multiple gas injection port system for providing a high uniform etching rate across the substrate is provided. In one embodiment, the apparatus includes a nozzle in the semiconductor processing apparatus having a hollow cylindrical body having a first outer diameter defining a hollow cylindrical sleeve and a second outer diameter defining a tip, a longitudinal passage formed longitudinally through the body of the hollow cylindrical sleeve and at least partially extending to the tip, and a lateral passage formed in the tip coupled to the longitudinal passage, the lateral passage extending outward from the longitudinal passage having an opening formed on an outer surface of the tip.

    摘要翻译： 提供了一种具有多个气体注入端口系统的设备，用于在衬底上提供高均匀的蚀刻速率。 在一个实施例中，该设备包括在半导体处理设备中的喷嘴，其具有中空圆柱体，其具有限定中空圆柱形套筒的第一外径和限定尖端的第二外径，纵向通道纵向穿过中空圆柱体 并且至少部分地延伸到尖端，以及形成在连接到纵向通道的尖端中的侧向通道，从纵向通道向外延伸的侧向通道具有形成在尖端的外表面上的开口。

    Method of etching organic antireflection coating (ARC) layers
    9.
    发明授权
    Method of etching organic antireflection coating (ARC) layers 失效
    蚀刻有机抗反射涂层（ARC）层的方法

    公开(公告)号：US06599437B2

    公开(公告)日：2003-07-29

    申请号：US09813392

    申请日：2001-03-20

    申请人： Oranna Yauw ,  Meihua Shen ,  Nicolas Gani ,  Jeffrey D. Chinn

    发明人： Oranna Yauw ,  Meihua Shen ,  Nicolas Gani ,  Jeffrey D. Chinn

    IPC分类号： H01L213213

    CPC分类号： H01L21/0276 ,  H01L21/31138

    摘要： A two-step method of etching an organic coating layer, in particular, an organic antireflection coating (ARC) layer, is disclosed. During the main etch step, the organic coating layer is etched using a plasma generated from a first source gas which includes a fluorocarbon and a non-carbon-containing, halogen-comprising gas. Etching is performed using a first substrate bias power. During the overetch step, residual organic coating material remaining after the main etch step is removed by exposing the substrate to a plasma generated from a second source gas which includes a chlorine-containing gas and an oxygen-containing gas, and which does not include a polymer-forming gas. The overetch step is performed using a second substrate bias power which is less than the first substrate bias power. The first source gas and first substrate bias power provide a higher etch rate in dense feature areas than in isolated feature areas during the main etch step, whereas the second source gas and second substrate bias power provide a higher etch rate in isolated feature areas than in dense feature areas during the overetch step, resulting in an overall balancing effect.

    摘要翻译： 公开了蚀刻有机涂层，特别是有机抗反射涂层（ARC）层的两步法。 在主蚀刻步骤期间，使用由包括碳氟化合物和非含碳卤素气体的第一源气体产生的等离子体蚀刻有机涂层。 使用第一衬底偏置功率进行蚀刻。 在过蚀刻步骤期间，通过将衬底暴露于由包含含氯气体和含氧气体的第二源气体产生的等离子体而将主蚀刻步骤后剩余的残留有机涂层材料除去，并且不包括 聚合物形成气体。 使用小于第一衬底偏置功率的第二衬底偏置功率来执行过蚀刻步骤。 在主蚀刻步骤期间，第一源气体和第一衬底偏置功率在致密特征区域中提供比在隔离特征区域中更高的蚀刻速率，而第二源气体和第二衬底偏置功率在隔离特征区域中提供比在 在疏浚过程中密集的特征区域，导致整体平衡效果。

    Methods for in-situ chamber clean utilized in an etching processing chamber
    10.
    发明授权
    Methods for in-situ chamber clean utilized in an etching processing chamber 有权
    在蚀刻处理室中利用原位室清洁的方法

    公开(公告)号：US09533332B2

    公开(公告)日：2017-01-03

    申请号：US13614365

    申请日：2012-09-13

    申请人： Noel Sun ,  Meihua Shen ,  Nicolas Gani ,  Chung Nang Liu ,  Radhika C. Mani

    发明人： Noel Sun ,  Meihua Shen ,  Nicolas Gani ,  Chung Nang Liu ,  Radhika C. Mani

    IPC分类号： B08B5/00 ,  B08B7/00 ,  B08B9/08 ,  C23C16/44 ,  H01J37/32

    CPC分类号： B08B5/00 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32449 ,  H01J37/32862 ,  Y10S438/905

    摘要： Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.

    摘要翻译： 本发明的实施例包括用于半导体器件中用于栅极结构制造工艺的等离子体处理室的原位室干洗的方法。 在一个实施例中，一种用于原位室干洗的方法包括在不存在设置在其中的基板的情况下将包括至少含硼气体的第一清洁气体供应到处理室中，提供至少包含含卤素气体的第二清洁气体 在没有基板的情况下进入处理室，并且在没有基板的情况下将至少包含含氧气体的第三清洁气体供应到处理室中。