摘要:
Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted η3-allyl)(carbonyl)metal complexes.
摘要:
Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted η3-allyl)(carbonyl)metal complexes.
摘要:
A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO)3 wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen.
摘要:
A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
摘要:
A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
摘要:
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
摘要:
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
摘要:
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
摘要:
An organometallic precursor is provided. The precursor corresponds in structure to Formula (I): Cp(R)nM(CO)2(X), wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
摘要:
A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.