Noise-reducing transistor arrangement
    1.
    发明授权
    Noise-reducing transistor arrangement 有权
    降噪晶体管布置

    公开(公告)号:US07733157B2

    公开(公告)日:2010-06-08

    申请号:US10583538

    申请日:2004-12-03

    IPC分类号: H03K17/687

    摘要: Noise-reducing transistor arrangement having first and second field effect transistors (FETs) having source terminals coupled together, drain terminals coupled together, and control terminals for application of a first or second signal. A clock generator unit is configured to provide the first and second signals alternately to the FETs with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the FETs, or with a reciprocal alternating frequency which is less than a mean lifetime of an occupation state of a defect in the boundary region between channel region and gate insulating layer of the FETs. The first signal is applied to the control terminal of the first FET and, simultaneously, the second signal to the control terminal of the second FET. The second signal is applied to the control terminal of the first FET and, simultaneously, the first signal to the control terminal of the second FET.

    摘要翻译: 具有第一和第二场效应晶体管(FET)的降噪晶体管装置,其具有耦合在一起的源极端子,耦合在一起的漏极端子和用于施加第一或第二信号的控制端子。 时钟发生器单元被配置为以至少与FET的噪声特性的截止频率一样大的交变频率或者具有较小的互逆交变频率来向FET施加交替的第一和第二信号 比FET的沟道区域和栅极绝缘层之间的边界区域的缺陷的占用状态的平均寿命长。 第一信号被施加到第一FET的控制端子,并且同时将第二信号施加到第二FET的控制端子。 第二信号被施加到第一FET的控制端,同时将第一信号施加到第二FET的控制端。

    Transistor arrangement, integrated circuit and method for operating field effect transistors
    2.
    发明授权
    Transistor arrangement, integrated circuit and method for operating field effect transistors 有权
    晶体管布置,集成电路和操作场效应晶体管的方法

    公开(公告)号:US07733156B2

    公开(公告)日:2010-06-08

    申请号:US10570924

    申请日:2004-09-01

    IPC分类号: H03K17/16 H03K17/687

    摘要: The transistor arrangement contains a first and a second field effect transistor comprising a first and a second source drain connection and a control connection for applying a first or a second signal. The two field effect transistors are of the same conductive type. The transistor arrangement is configured in such a manner that the first signal can be applied in an alternating manner to the control connection of the first field effect transistor and the second signal can be applied in a simultaneous manner to the control connection of the second field effect transistor, and/or the second signal can be applied to the control connection of the first field effect transistor and the first signal can be applied simultaneously to the control connection of the second field effect transistor.

    摘要翻译: 晶体管装置包括第一和第二场效应晶体管,其包括第一和第二源极漏极连接以及用于施加第一或第二信号的控制连接。 两个场效应晶体管具有相同的导电类型。 晶体管布置被配置为使得第一信号可以以交替方式施加到第一场效应晶体管的控制连接,并且第二信号可以以与第二场效应的控制连接同时的方式施加 晶体管和/或第二信号可以被施加到第一场效应晶体管的控制连接,并且第一信号可以同时施加到第二场效应晶体管的控制连接。

    Noise-Reducing Transistor Arrangement, Integrated Circuit, and Method for Reducing the Noise of Field Effect Transistors
    3.
    发明申请
    Noise-Reducing Transistor Arrangement, Integrated Circuit, and Method for Reducing the Noise of Field Effect Transistors 有权
    降噪晶体管布置,集成电路和降低场效应晶体管噪声的方法

    公开(公告)号:US20070279120A1

    公开(公告)日:2007-12-06

    申请号:US10583538

    申请日:2004-12-03

    IPC分类号: H03K17/16

    摘要: Noise-reducing transistor arrangement having first and second field effect transistors (FETs) having source terminals coupled together, drain terminals coupled together, and control terminals for application of a first or second signal. A clock generator unit is configured to provide the first and second signals alternately to the FETs with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the FETs, or with a reciprocal alternating frequency which is less than a mean lifetime of an occupation state of a defect in the boundary region between channel region and gate insulating layer of the FETs. The first signal is applied to the control terminal of the first FET and, simultaneously, the second signal to the control terminal of the second FET. The second signal is applied to the control terminal of the first FET and, simultaneously, the first signal to the control terminal of the second FET.

    摘要翻译: 具有第一和第二场效应晶体管(FET)的降噪晶体管装置,其具有耦合在一起的源极端子,耦合在一起的漏极端子和用于施加第一或第二信号的控制端子。 时钟发生器单元被配置为以至少与FET的噪声特性的截止频率一样大的交变频率或者具有较小的互逆交变频率来向FET施加交替的第一和第二信号 比FET的沟道区域和栅极绝缘层之间的边界区域的缺陷的占用状态的平均寿命长。 第一信号被施加到第一FET的控制端子,并且同时将第二信号施加到第二FET的控制端子。 第二信号被施加到第一FET的控制端,同时将第一信号施加到第二FET的控制端。

    Transistor arrangement, integrated circuit and method for operating field effect transistors
    4.
    发明申请
    Transistor arrangement, integrated circuit and method for operating field effect transistors 有权
    晶体管布置,集成电路和操作场效应晶体管的方法

    公开(公告)号:US20070176634A1

    公开(公告)日:2007-08-02

    申请号:US10570924

    申请日:2004-09-01

    IPC分类号: H03K19/094

    摘要: The transistor arrangement contains a first and a second field effect transistor comprising a first and a second source drain connection and a control connection for applying a first or a second signal. The two field effect transistors are of the same conductive type. The transistor arrangement is configured in such a manner that the first signal can be applied in an alternating manner to the control connection of the first field effect transistor and the second signal can be applied in a simultaneous manner to the control connection of the second field effect transistor, and/or the second signal can be applied to the control connection of the first field effect transistor and the first signal can be applied simultaneously to the control connection of the second field effect transistor.

    摘要翻译: 晶体管装置包括第一和第二场效应晶体管,其包括第一和第二源极漏极连接以及用于施加第一或第二信号的控制连接。 两个场效应晶体管具有相同的导电类型。 晶体管布置被配置为使得第一信号可以以交替方式施加到第一场效应晶体管的控制连接,并且第二信号可以以与第二场效应的控制连接同时的方式施加 晶体管和/或第二信号可以被施加到第一场效应晶体管的控制连接,并且第一信号可以同时施加到第二场效应晶体管的控制连接。

    Electronic component with ID tags
    6.
    发明授权
    Electronic component with ID tags 有权
    具有ID标签的电子元件

    公开(公告)号:US07817037B2

    公开(公告)日:2010-10-19

    申请号:US10562458

    申请日:2004-06-30

    IPC分类号: G08B13/14 H03K7/08

    CPC分类号: G06K19/0723

    摘要: The invention relates to an electronic component that can be operated by means of an alternating voltage. Said component includes at least one input, at least one output and a pair of electronic sub-components with an identical function. The input(s) of the electronic component is/are coupled to a respective input of the electronic sub-components with an identical function and the output(s) of the electronic component is/are coupled to a respective output of said electronic sub-components. In addition, the electronic component is configured in such a way that at least one output only one output signal of the first sub-component of the pair of functionally identical electronic components can be picked up during a first half-wave of an alternating voltage, whereas only one output signal of the second sub-component of the pair of functionally identical electronic can be picked up during the second half-wave of the alternating voltage.

    摘要翻译: 本发明涉及可以通过交流电压操作的电子部件。 所述组件包括具有相同功能的至少一个输入,至少一个输出和一对电子子部件。 电子部件的输入端以相同的功能耦合到电子子部件的相应输入端,并且电子部件的输出耦合到所述电子部件的相应输出端, 组件。 此外,电子部件被配置为使得在交流电压的第一半波期间可以拾取一对功能相同的电子部件中的第一子部件的至少一个输出信号的一个输出信号, 而一对功能相同的电子对的第二子分量的一个输出信号可以在交流电压的第二个半波期间被拾取。

    Circuit arrangement and method for operating a circuit arrangement
    7.
    发明授权
    Circuit arrangement and method for operating a circuit arrangement 有权
    用于操作电路装置的电路布置和方法

    公开(公告)号:US07688625B2

    公开(公告)日:2010-03-30

    申请号:US12032202

    申请日:2008-02-15

    IPC分类号: G11C16/04 G11C5/14

    CPC分类号: G11C16/10 G11C16/22 G11C16/30

    摘要: A circuit arrangement includes a nonvolatile memory cell having a continuously variable characteristic that can be read out. A programming unit is coupled to the memory cell and designed to apply an analog signal to the memory cell in order to vary the characteristic, if the characteristic lies within a predetermined range of values, in such a way that the characteristic lies outside the predetermined range of values. A supply voltage unit is provided for providing a supply voltage. A changeover unit is coupled to the supply voltage unit and to the programming unit and designed to trigger the application of the analog signal to the memory cell if the supply voltage is interrupted.

    摘要翻译: 电路装置包括具有可读出的连续可变特性的非易失性存储单元。 编程单元耦合到存储器单元并且被设计为将模拟信号施加到存储器单元,以便如果特性位于预定值范围内,则改变特性,使得特性位于预定范围之外 的价值观。 提供电源电压单元以提供电源电压。 转换单元耦合到电源电压单元和编程单元,并且被设计成如果电源电压被中断则触发模拟信号施加到存储单元。

    CIRCUIT ARRANGEMENT AND METHOD FOR OPERATING A CIRCUIT ARRANGEMENT
    8.
    发明申请
    CIRCUIT ARRANGEMENT AND METHOD FOR OPERATING A CIRCUIT ARRANGEMENT 有权
    电路布置和操作电路布置的方法

    公开(公告)号:US20080198653A1

    公开(公告)日:2008-08-21

    申请号:US12032202

    申请日:2008-02-15

    IPC分类号: G11C11/34

    CPC分类号: G11C16/10 G11C16/22 G11C16/30

    摘要: A circuit arrangement includes a nonvolatile memory cell having a continuously variable characteristic that can be read out. A programming unit is coupled to the memory cell and designed to apply an analog signal to the memory cell in order to vary the characteristic, if the characteristic lies within a predetermined range of values, in such a way that the characteristic lies outside the predetermined range of values. A supply voltage unit is provided for providing a supply voltage. A changeover unit is coupled to the supply voltage unit and to the programming unit and designed to trigger the application of the analog signal to the memory cell if the supply voltage is interrupted.

    摘要翻译: 电路装置包括具有可读出的连续可变特性的非易失性存储单元。 编程单元耦合到存储器单元并且被设计为将模拟信号施加到存储器单元,以便如果特性位于预定值范围内,则改变特性,使得特性位于预定范围之外 的价值观。 提供电源电压单元以提供电源电压。 转换单元耦合到电源电压单元和编程单元,并且被设计成如果电源电压被中断则触发模拟信号施加到存储单元。