公开(公告)号：US07611991B2

公开(公告)日：2009-11-03

申请号：US11470024

申请日：2006-09-05

申请人： Ralf Richter ,  Matthias Schaller ,  Ellen Claus ,  Eckhard Langer

发明人： Ralf Richter ,  Matthias Schaller ,  Ellen Claus ,  Eckhard Langer

IPC分类号： H01L21/44

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： By providing dummy vias below electrically non-functional metal regions, the risk for metal delamination in subsequent processes may be significantly reduced. Moreover, in some embodiments, the mechanical strength of the resulting metallization layers may be even more enhanced by providing dummy metal regions, which may act as anchors for an overlying non-functional metal region. In addition, dummy vias may also be provided in combination with electrically functional metal lines and regions, thereby also enhancing the mechanical stability and the electrical performance thereof.

摘要翻译： 通过在电气非功能金属区域之下提供虚拟通孔，可以显着降低后续工艺中金属分层的风险。 而且，在一些实施例中，所得到的金属化层的机械强度甚至可以通过提供虚拟金属区域来进一步增强，虚拟金属区域可以用作覆盖的非功能性金属区域的锚点。 此外，还可以与电功能金属线和区域组合提供虚拟通孔，从而也增强机械稳定性及其电性能。

公开(公告)号：US20070123009A1

公开(公告)日：2007-05-31

申请号：US11470024

申请日：2006-09-05

申请人： Ralf Richter ,  Matthias Schaller ,  Ellen Claus ,  Eckhard Langer

发明人： Ralf Richter ,  Matthias Schaller ,  Ellen Claus ,  Eckhard Langer

IPC分类号： H01L21/20

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： By providing dummy vias below electrically non-functional metal regions, the risk for metal delamination in subsequent processes may be significantly reduced. Moreover, in some embodiments, the mechanical strength of the resulting metallization layers may be even more enhanced by providing dummy metal regions, which may act as anchors for an overlying non-functional metal region. In addition, dummy vias may also be provided in combination with electrically functional metal lines and regions, thereby also enhancing the mechanical stability and the electrical performance thereof.

摘要翻译： 通过在电气非功能金属区域之下提供虚拟通孔，可以显着降低后续工艺中金属分层的风险。 而且，在一些实施例中，所得到的金属化层的机械强度甚至可以通过提供虚拟金属区域来进一步增强，虚拟金属区域可以用作覆盖的非功能性金属区域的锚点。 此外，还可以与电功能金属线和区域组合提供虚拟通孔，从而也增强机械稳定性及其电性能。

公开(公告)号：US07700377B2

公开(公告)日：2010-04-20

申请号：US11862345

申请日：2007-09-27

申请人： Ralf Richter ,  Heike Salz ,  Matthias Schaller

发明人： Ralf Richter ,  Heike Salz ,  Matthias Schaller

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  H01L21/31116 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7843

摘要： During the patterning of respective contact etch stop layers having a different type of intrinsic stress, the deposition of an etch indicator layer between the first and the second contact etch stop layer may be omitted in order to avoid any undue effects of this layer during the subsequent processing. Local removal of the second stressed layer may be performed on the basis of an etch time controlled etch process, which in some aspects may include the provision of an etch indicator material, wherein feed forward and feed back measurement data may be used in an appropriately designed process controller.

摘要翻译： 在具有不同类型的固有应力的相应接触蚀刻停止层的图案化期间，可以省略在第一和第二接触蚀刻停止层之间的蚀刻指示剂层的沉积，以避免在随后的该层期间该层的任何不适当的影响 处理。 可以基于蚀刻时间控制蚀刻工艺来执行局部去除第二应力层，其在一些方面可以包括提供蚀刻指示剂材料，其中前馈和反馈测量数据可以被适当地设计 过程控制器。

公开(公告)号：US07550396B2

公开(公告)日：2009-06-23

申请号：US11742878

申请日：2007-05-01

申请人： Kai Frohberg ,  Volker Grimm ,  Sven Mueller ,  Matthias Lehr ,  Ralf Richter ,  Jochen Klais ,  Martin Mazur ,  Heike Salz ,  Joerg Hohage ,  Matthias Schaller

发明人： Kai Frohberg ,  Volker Grimm ,  Sven Mueller ,  Matthias Lehr ,  Ralf Richter ,  Jochen Klais ,  Martin Mazur ,  Heike Salz ,  Joerg Hohage ,  Matthias Schaller

IPC分类号： H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/7833 ,  H01L29/7843

摘要： By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.

摘要翻译： 通过进行等离子体处理以有效地密封包含氮化硅的应力介电层的表面，可以实现在接触开口的图案化期间提高的性能，因为在所选择的图形化应力层的选择性图案化期间可以显着降低氮诱导的抗蚀剂中毒 不同类型的内在应力。

公开(公告)号：US20080206905A1

公开(公告)日：2008-08-28

申请号：US11868789

申请日：2007-10-08

申请人： Matthias Schaller ,  Heike Salz ,  Ralf Richter ,  Sylvio Mattick

发明人： Matthias Schaller ,  Heike Salz ,  Ralf Richter ,  Sylvio Mattick

IPC分类号： H01L21/66

CPC分类号： H01L21/84 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L22/26 ,  H01L29/7843

摘要： During the patterning of stressed layers having different types of intrinsic stress, the effects of the deposition of a silicon dioxide based etch indicator material between the first and second dielectric layers may be significantly reduced by a controlled etch on the basis of optical measurement data indicating the etch rate and, thus, the performance of the respective etch process. In other cases, highly efficient etch indicator species may be incorporated into the stressed dielectric layers or may be formed on a surface portion thereof with reduced layer thickness, thereby providing an enhanced endpoint detection signal without creating the negative effects of silicon dioxide based indicator layers. In one illustrative embodiment, a stressed silicon, nitrogen and carbon-containing layer may be combined with a stressed silicon and nitrogen-containing layer, wherein the carbon species provides a prominent endpoint detection signal.

摘要翻译： 在具有不同类型的固有应力的应力层的图案化期间，可以通过基于表示第二和第二电介质层的光学测量数据的受控蚀刻来显着地减少基于二氧化硅的蚀刻指示剂材料沉积的影响 蚀刻速率，因此，各个蚀刻工艺的性能。 在其他情况下，可以将高效的蚀刻指示剂物质结合到应力介电层中，或者可以在其表面部分上形成具有减小的层厚度，从而提供增强的端点检测信号，而不产生基于二氧化硅的指示剂层的负面影响。 在一个说明性实施例中，应力硅，氮和碳的层可以与应力硅和含氮层组合，其中碳类提供突出的端点检测信号。

公开(公告)号：US07416973B2

公开(公告)日：2008-08-26

申请号：US11538111

申请日：2006-10-03

申请人： Carsten Peters ,  Heike Salz ,  Ralf Richter ,  Matthias Schaller

发明人： Carsten Peters ,  Heike Salz ,  Ralf Richter ,  Matthias Schaller

IPC分类号： H01L21/302 ,  H01L21/331 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/665

摘要： By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.

摘要翻译： 通过提供另外的基于二氧化硅的蚀刻停止层，可以以高度可靠的方式控制用于形成用于直接连接多晶硅线和有源区的接触开口的相应蚀刻工艺。 在另一方面，可以通过接触蚀刻停止层的暴露部分的蚀刻行为的修改来增加接触结构的蚀刻选择性。

公开(公告)号：US07883629B2

公开(公告)日：2011-02-08

申请号：US11868789

申请日：2007-10-08

申请人： Matthias Schaller ,  Heike Salz ,  Ralf Richter ,  Sylvio Mattick

发明人： Matthias Schaller ,  Heike Salz ,  Ralf Richter ,  Sylvio Mattick

IPC分类号： C03C15/00 ,  G01R31/00 ,  H01L21/00 ,  H01L21/66

CPC分类号： H01L21/84 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L22/26 ,  H01L29/7843

摘要： During the patterning of stressed layers having different types of intrinsic stress, the effects of the deposition of a silicon dioxide based etch indicator material between the first and second dielectric layers may be significantly reduced by a controlled etch on the basis of optical measurement data indicating the etch rate and, thus, the performance of the respective etch process. In other cases, highly efficient etch indicator species may be incorporated into the stressed dielectric layers or may be formed on a surface portion thereof with reduced layer thickness, thereby providing an enhanced endpoint detection signal without creating the negative effects of silicon dioxide based indicator layers. In one illustrative embodiment, a stressed silicon, nitrogen and carbon-containing layer may be combined with a stressed silicon and nitrogen-containing layer, wherein the carbon species provides a prominent endpoint detection signal.

摘要翻译： 在具有不同类型的固有应力的应力层的图案化期间，可以通过基于表示第二和第二电介质层的光学测量数据的受控蚀刻来显着地减少基于二氧化硅的蚀刻指示剂材料沉积的影响 蚀刻速率，因此，各个蚀刻工艺的性能。 在其他情况下，可以将高效的蚀刻指示剂物质结合到应力介电层中，或者可以在其表面部分上形成具有减小的层厚度，从而提供增强的端点检测信号，而不产生基于二氧化硅的指示剂层的负面影响。 在一个说明性实施例中，应力硅，氮和碳的层可以与应力硅和含氮层组合，其中碳类提供突出的端点检测信号。

公开(公告)号：US20070152343A1

公开(公告)日：2007-07-05

申请号：US11534285

申请日：2006-09-22

申请人： Ralf Richter ,  Carsten Peters ,  Heike Salz ,  Matthias Schaller

发明人： Ralf Richter ,  Carsten Peters ,  Heike Salz ,  Matthias Schaller

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76832 ,  H01L21/76846 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： By providing additional etch stop layers and/or etch protection layers, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. Consequently, conductive line erosion and/or penetration into extension regions may be significantly reduced, thereby improving the reliability and performance of corresponding semiconductor devices.

摘要翻译： 通过提供附加的蚀刻停止层和/或蚀刻保护层，可以以高度可靠的方式控制用于形成用于直接连接多晶硅线路和有源区域的接触开口的相应蚀刻工艺。 因此，可以显着地减少导线侵蚀和/或穿透到延伸区域，从而提高对应的半导体器件的可靠性和性能。

公开(公告)号：US07678690B2

公开(公告)日：2010-03-16

申请号：US11534285

申请日：2006-09-22

申请人： Ralf Richter ,  Carsten Peters ,  Heike Salz ,  Matthias Schaller

发明人： Ralf Richter ,  Carsten Peters ,  Heike Salz ,  Matthias Schaller

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76832 ,  H01L21/76846 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： By providing additional etch stop layers and/or etch protection layers, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. Consequently, conductive line erosion and/or penetration into extension regions may be significantly reduced, thereby improving the reliability and performance of corresponding semiconductor devices.

摘要翻译： 通过提供附加的蚀刻停止层和/或蚀刻保护层，可以以高度可靠的方式控制用于形成用于直接连接多晶硅线路和有源区域的接触开口的相应蚀刻工艺。 因此，可以显着地减少导线侵蚀和/或穿透到延伸区域，从而提高对应的半导体器件的可靠性和性能。

公开(公告)号：US20080182346A1

公开(公告)日：2008-07-31

申请号：US11862345

申请日：2007-09-27

申请人： Ralf Richter ,  Heike Salz ,  Matthias Schaller

发明人： Ralf Richter ,  Heike Salz ,  Matthias Schaller

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  H01L21/31116 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7843

摘要： During the patterning of respective contact etch stop layers having a different type of intrinsic stress, the deposition of an etch indicator layer between the first and the second contact etch stop layer may be omitted in order to avoid any undue effects of this layer during the subsequent processing. Local removal of the second stressed layer may be performed on the basis of an etch time controlled etch process, which in some aspects may include the provision of an etch indicator material, wherein feed forward and feed back measurement data may be used in an appropriately designed process controller.

摘要翻译： 在具有不同类型的固有应力的相应接触蚀刻停止层的图案化期间，可以省略在第一和第二接触蚀刻停止层之间的蚀刻指示剂层的沉积，以避免在随后的该层期间该层的任何不适当的影响 处理。 可以基于蚀刻时间控制蚀刻工艺来执行局部去除第二应力层，其在一些方面可以包括提供蚀刻指示剂材料，其中前馈和反馈测量数据可以被适当地设计 过程控制器。