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公开(公告)号：US06737215B2
公开(公告)日：2004-05-18
申请号：US09853732
申请日：2001-05-11
申请人： Ralph R. Dammel , Raj Sakamuri
发明人： Ralph R. Dammel , Raj Sakamuri
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a photoresist composition sensitive in the deep ultraviolet region and a method of processing the photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.
摘要翻译： 本发明涉及在深紫外区域敏感的光致抗蚀剂组合物和光致抗蚀剂的加工方法，其中光致抗蚀剂包含新的共聚物，光敏组分和溶剂。 新型共聚物包含衍生自含有至少一个氰基官能团的烯键式不饱和化合物的单元和衍生自不饱和环非芳族化合物的单元。
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公开(公告)号：US06686429B2
公开(公告)日：2004-02-03
申请号：US09854312
申请日：2001-05-11
申请人： Ralph R. Dammel , Raj Sakamuri
发明人： Ralph R. Dammel , Raj Sakamuri
IPC分类号： C08F12042
CPC分类号： G03F7/0395 , C08F222/32 , C08F232/08 , G03F7/0046 , G03F7/0382
摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.
摘要翻译： 本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。 当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。
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3.发明授权Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof 有权用顶部涂层及其材料对深紫外光致抗蚀剂进行成像的工艺公开(公告)号：US07473512B2
公开(公告)日：2009-01-06
申请号：US11044305
申请日：2005-01-27
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/11
摘要： The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about −9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.
摘要翻译： 本发明涉及一种使用深紫外浸没式光刻技术对具有顶涂层的深紫外（UV）光刻胶进行成像的方法。 本发明还涉及一种面漆组合物，其包含具有至少一个pKa在约-9至约11范围内的至少一个可离子化基团的聚合物。本发明还涉及一种使用顶部阻挡涂层对光致抗蚀剂进行成像的方法，以防止 光致抗蚀剂来自环境污染物。
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公开(公告)号：US07211366B2
公开(公告)日：2007-05-01
申请号：US10658840
申请日：2003-09-09
IPC分类号： G03F7/004
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.
摘要翻译： 本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含至少一种如结构1所述的单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法，以及 使聚合物在有机碱存在下进行。
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公开(公告)号：US06486282B1
公开(公告)日：2002-11-26
申请号：US09854312
申请日：2001-05-11
申请人： Ralph R. Dammel , Raj Sakamuri
发明人： Ralph R. Dammel , Raj Sakamuri
IPC分类号： C08F12042
CPC分类号： G03F7/0395 , C08F222/32 , C08F232/08 , G03F7/0046 , G03F7/0382
摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.
摘要翻译： 本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。 当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。
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公开(公告)号：US07351521B2
公开(公告)日：2008-04-01
申请号：US11716361
申请日：2007-03-09
CPC分类号： G03F7/0395 , G03F7/0046
摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.
摘要翻译： 本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含至少一种如结构1所述的单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法，以及 使聚合物在有机碱存在下进行。
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公开(公告)号：US20100092895A1
公开(公告)日：2010-04-15
申请号：US12449735
申请日：2008-02-25
申请人： Ruzhi Zhang , Wookyu Kim , David J. Abdallah , PingHung Lu , Mark O. Neissor , Ralph R. Dammel , Ari Karkkainen
发明人： Ruzhi Zhang , Wookyu Kim , David J. Abdallah , PingHung Lu , Mark O. Neissor , Ralph R. Dammel , Ari Karkkainen
CPC分类号： C08G77/045 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3124
摘要： A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.
摘要翻译： 包含具有至少一个Si-OH基团和至少一个Si-OR基团的硅氧烷聚合物的聚合物，其中R是任选具有反应性官能团的缩合稳定基团，其中所述硅氧烷聚合物在置于溶剂中时具有重量 提供了通过GPC测量的在40℃下老化1周后的平均分子量增加小于或等于50％。
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公开(公告)号：US07537879B2
公开(公告)日：2009-05-26
申请号：US10994745
申请日：2004-11-22
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要翻译： 本发明涉及一种对300nm至100nm之间的波长敏感的新型化学放大光致抗蚀剂，并且包括a）一种新型聚合物，其包含不溶于碱性水溶液的聚合物主链的侧基的砜基， 用酸不稳定基团保护的至少一个酸性部分，和b）在照射时能够产生酸的化合物。 本发明还涉及对新型正性光致抗蚀剂组合物进行成像的方法。
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公开(公告)号：US07033728B2
公开(公告)日：2006-04-25
申请号：US10748778
申请日：2003-12-29
申请人： Ralph R. Dammel
发明人： Ralph R. Dammel
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/143 , Y10S430/146
摘要： The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.
摘要翻译： 本发明涉及一种可用于300nm至10nm波长的光敏组合物，其包含含有取代或未取代的较高金刚烷的聚合物。
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10.发明授权Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物公开(公告)号：US06991888B2
公开(公告)日：2006-01-31
申请号：US10439472
申请日：2003-05-16
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.
摘要翻译： 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。
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