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19 条记录 (耗时 0.021 秒)

    Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
    1.
    发明授权
    Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof 有权
    用顶部涂层及其材料对深紫外光致抗蚀剂进行成像的工艺

    公开(公告)号：US07473512B2

    公开(公告)日：2009-01-06

    申请号：US11044305

    申请日：2005-01-27

    申请人： Francis M. Houlihan ,  Ralph R. Dammel ,  Andrew R. Romano ,  Raj Sakamuri

    发明人： Francis M. Houlihan ,  Ralph R. Dammel ,  Andrew R. Romano ,  Raj Sakamuri

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/11

    摘要： The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about −9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.

    摘要翻译： 本发明涉及一种使用深紫外浸没式光刻技术对具有顶涂层的深紫外（UV）光刻胶进行成像的方法。 本发明还涉及一种面漆组合物，其包含具有至少一个pKa在约-9至约11范围内的至少一个可离子化基团的聚合物。本发明还涉及一种使用顶部阻挡涂层对光致抗蚀剂进行成像的方法，以防止 光致抗蚀剂来自环境污染物。

    Photoresist composition for deep ultraviolet lithography
    3.
    发明授权
    Photoresist composition for deep ultraviolet lithography 失效
    用于深紫外光刻的光刻胶组合物

    公开(公告)号：US07351521B2

    公开(公告)日：2008-04-01

    申请号：US11716361

    申请日：2007-03-09

    申请人： Ralph R. Dammel ,  Raj Sakamuri ,  Francis M. Houlihan

    发明人： Ralph R. Dammel ,  Raj Sakamuri ,  Francis M. Houlihan

    IPC分类号： G03F7/30 ,  G03F7/021

    CPC分类号： G03F7/0395 ,  G03F7/0046

    摘要： The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.

    摘要翻译： 本发明涉及一种光致抗蚀剂组合物，其包含光致酸产生剂和至少一种包含至少一种如结构1所述的单元的聚合物。本发明还涉及用于使本发明的光致抗蚀剂组合物成像的方法，以及 使聚合物在有机碱存在下进行。

    Positive-Working Photoimageable Bottom Antireflective Coating
    5.
    发明申请
    Positive-Working Photoimageable Bottom Antireflective Coating 审中-公开
    正面照相底部防反射涂层

    公开(公告)号：US20110086312A1

    公开(公告)日：2011-04-14

    申请号：US12576622

    申请日：2009-10-09

    申请人： Ralph R. Dammel ,  Srinivasan Chakrapani ,  Munirathna Padmanaban ,  Shinji Miyazaki ,  Edward W. Ng ,  Takanori Kudo ,  Alberto D. Dioses ,  Francis M. Houlihan

    发明人： Ralph R. Dammel ,  Srinivasan Chakrapani ,  Munirathna Padmanaban ,  Shinji Miyazaki ,  Edward W. Ng ,  Takanori Kudo ,  Alberto D. Dioses ,  Francis M. Houlihan

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/091

    摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.

    摘要翻译： 本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。 本发明还涉及使用这种组合物的方法。

    Positive-Working Photoimageable Bottom Antireflective Coating
    9.
    发明申请
    Positive-Working Photoimageable Bottom Antireflective Coating 有权
    正面照相底部防反射涂层

    公开(公告)号：US20110076626A1

    公开(公告)日：2011-03-31

    申请号：US12570923

    申请日：2009-09-30

    申请人： Munirathna Padmanaban ,  Srinivasan Chakrapani ,  Francis M. Houlihan ,  Shinji Miyazaki ,  Edward Ng ,  Mark O. Neisser

    发明人： Munirathna Padmanaban ,  Srinivasan Chakrapani ,  Francis M. Houlihan ,  Shinji Miyazaki ,  Edward Ng ,  Mark O. Neisser

    IPC分类号： G03F7/00 ,  G03C1/00

    CPC分类号： G03F7/091

    摘要： The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.

    摘要翻译： 本发明涉及能够在碱性水溶液中通过显影形成图案的可光成像抗反射涂料组合物，其包含（i）可溶于涂布溶剂中的聚合物A，其包含发色团，交联部分和任选的可裂解基团， 在酸或热条件下产生有助于聚合物在碱性水溶液中的溶解度的功能; （ii）至少一种光致酸发生剂; （iii）交联剂; （iv）任选的热酸产生剂; （v）聚合物B，其在显影前可溶于碱性水溶液，其中聚合物B与聚合物A不可混溶并可溶于涂布溶剂中; （vi）涂料溶剂组合物，和（vii）任选的猝灭剂。 本发明还涉及用于对抗反射涂层进行成像的方法。