摘要:
An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要:
An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要:
An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.
摘要:
A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
摘要:
A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
摘要:
An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.
摘要:
An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.
摘要:
An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.
摘要:
A method for roughening a surface of a body (1), having the following steps of: coating the surface with a mask layer (2), applying preformed mask bodies (3) on the mask layer (2), etching through the mask layer (2) at locations not covered by mask bodies (3), and etching the body (1) at locations of its surface that are free of the mask layer (2).
摘要:
A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).