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    Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
    7.
    发明授权
    Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片及其制造方法

    公开(公告)号：US08710537B2

    公开(公告)日：2014-04-29

    申请号：US12922736

    申请日：2009-06-25

    申请人： Karl Engl ,  Berthold Hahn ,  Klaus Streubel ,  Markus Klein

    发明人： Karl Engl ,  Berthold Hahn ,  Klaus Streubel ,  Markus Klein

    IPC分类号： H01L33/38

    CPC分类号： H01L27/15 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

    摘要翻译： 辐射发射半导体芯片包括：载体和具有包括产生辐射的有源区的半导体层序列的半导体本体，第一半导体层和第二半导体层; 其中所述有源区布置在所述第一半导体层和所述第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 所述半导体本体包括延伸穿过所述有源区域的至少一个凹部; 所述第一半导体层与所述第一半导体层沿着所述载体的方向导电地连接到在所述凹部中延伸的第一连接层; 并且第一连接层经由保护二极管电连接到第二半导体层。

    OPTOELECTRONIC PROJECTION DEVICE
    8.
    发明申请
    OPTOELECTRONIC PROJECTION DEVICE 有权
    光电投影装置

    公开(公告)号：US20110241031A1

    公开(公告)日：2011-10-06

    申请号：US13127328

    申请日：2009-11-27

    申请人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

    发明人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

    摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

    RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP
    9.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP 有权
    辐射发射半导体芯片和产生辐射发射半导体芯片的方法

    公开(公告)号：US20120018763A1

    公开(公告)日：2012-01-26

    申请号：US12922736

    申请日：2009-06-25

    申请人： Karl Engl ,  Berthold Hahn ,  Klaus Streubel ,  Markus Klein

    发明人： Karl Engl ,  Berthold Hahn ,  Klaus Streubel ,  Markus Klein

    IPC分类号： H01L33/62

    CPC分类号： H01L27/15 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

    摘要翻译： 辐射发射半导体芯片包括：载体和具有包括产生辐射的有源区的半导体层序列的半导体本体，第一半导体层和第二半导体层; 其中所述有源区布置在所述第一半导体层和所述第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 所述半导体本体包括延伸穿过所述有源区域的至少一个凹部; 所述第一半导体层与所述第一半导体层沿着所述载体的方向导电地连接到在所述凹部中延伸的第一连接层; 并且第一连接层经由保护二极管电连接到第二半导体层。

    Radiation detector
    10.
    发明授权
    Radiation detector 有权
    辐射检测器

    公开(公告)号：US08274657B2

    公开(公告)日：2012-09-25

    申请号：US12516831

    申请日：2007-11-29

    申请人： Arndt Jaeger ,  Peter Stauss ,  Klaus Streubel ,  Werner Kuhlmann

    发明人： Arndt Jaeger ,  Peter Stauss ,  Klaus Streubel ,  Werner Kuhlmann

    IPC分类号： G01J3/46

    CPC分类号： G01J1/4228 ,  G01J1/0488 ,  G01J3/36 ,  G01J3/46 ,  G01J3/465 ,  G01J3/50 ,  G01J3/51 ,  G01J3/513 ,  G01J2003/507 ,  H01L31/105

    摘要： A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

    摘要翻译： 公开了一种具有检测器装置的检测器装置，其具有多个检测器元件，通过该检测器元件在放射线检测器的操作期间获得检测器信号，并且具有控制装置，其中检测器元件各自具有光谱灵敏度分布 并且适于产生信号，至少一个检测器元件包括化合物半导体材料，并且该检测器元件被设计用于检测可见光谱区域中的辐射，辐射检测器被设计成使用检测器元件的灵敏度分布 为了形成辐射检测器的不同光谱灵敏度通道，可以使用检测器元件在这些灵敏度通道中产生分配给相应灵敏度通道的通道信号，并且控制装置被设计成使得不同通道信号对检测器信号的贡献 的辐射探测器是不同的控制 ed。