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    Low-resistance electrode design
    1.
    发明授权
    Low-resistance electrode design 有权
    低电阻电极设计

    公开(公告)号：US08846473B2

    公开(公告)日：2014-09-30

    申请号：US13458213

    申请日：2012-04-27

    申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    IPC分类号： H01L21/336 ,  H01L29/417 ,  G06F17/50 ,  H01L23/482

    CPC分类号： H01L29/41758 ,  G06F17/5068 ,  H01L23/4824 ,  H01L23/647 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.

    摘要翻译： 提供了一种用于设计半导体器件的方案，其中确定一对电极的两个或多个属性以例如使电极之间的电阻最小化。 每个电极可以包括多个指状件延伸的电流馈送触点，其以交替模式与另一个电极的指状物交叉指向。 属性可以包括每个手指的目标深度，每对相邻手指的目标有效宽度和/或当前馈送触点的一个或多个目标属性。 随后，可以制造包括该器件的器件和/或电路。

    Semiconductor material doping based on target valence band discontinuity
    3.
    发明授权
    Semiconductor material doping based on target valence band discontinuity 有权
    基于目标价带不连续的半导体材料掺杂

    公开(公告)号：US08426225B2

    公开(公告)日：2013-04-23

    申请号：US12960476

    申请日：2010-12-04

    申请人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

    发明人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

    IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32

    摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

    摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

    Low-Resistance Electrode Design
    6.
    发明申请
    Low-Resistance Electrode Design 有权
    低电阻电极设计

    公开(公告)号：US20120216161A1

    公开(公告)日：2012-08-23

    申请号：US13458213

    申请日：2012-04-27

    申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    IPC分类号： G06F17/50

    CPC分类号： H01L29/41758 ,  G06F17/5068 ,  H01L23/4824 ,  H01L23/647 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.

    摘要翻译： 提供了一种用于设计半导体器件的方案，其中确定一对电极的两个或多个属性以例如使电极之间的电阻最小化。 每个电极可以包括多个指状件延伸的电流馈送触点，其以交替模式与另一个电极的指状物交叉指向。 属性可以包括每个手指的目标深度，每对相邻手指的目标有效宽度和/或当前馈送触点的一个或多个目标属性。 随后，可以制造包括该器件的器件和/或电路。

    Semiconductor Material Doping
    8.
    发明申请
    Semiconductor Material Doping 有权
    半导体材料掺杂

    公开(公告)号：US20110138341A1

    公开(公告)日：2011-06-09

    申请号：US12960476

    申请日：2010-12-04

    申请人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

    发明人： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

    IPC分类号： G06F17/50 ,  H01L21/66

    CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/06 ,  H01L33/32

    摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.

    摘要翻译： 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

    Method of radiation generation and manipulation
    9.
    发明授权
    Method of radiation generation and manipulation 有权
    辐射生成和操纵的方法

    公开(公告)号：US07955882B2

    公开(公告)日：2011-06-07

    申请号：US12619758

    申请日：2009-11-17

    申请人： Michael Shur ,  Victor Ryzhii ,  Remigijus Gaska

    发明人： Michael Shur ,  Victor Ryzhii ,  Remigijus Gaska

    IPC分类号： H01L21/00

    CPC分类号： H01S1/02 ,  H01S3/094 ,  H01S3/1628 ,  H01S2302/02

    摘要： A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency of the plasma waves, and as a result, the generated radiation are adjusted using a voltage applied to the semiconducting device.

    摘要翻译： 一种管理在太赫兹和/或微波区域中具有频率的辐射的方法。 该方法包括提供具有二维载气的半导体器件。 使用激光脉冲在载气中产生等离子体波。 等离子体波的频率，结果，使用施加到半导体器件的电压来调节所产生的辐射。

    Heterostructure including light generating structure contained in potential well
    10.
    发明授权
    Heterostructure including light generating structure contained in potential well 有权
    含有发光结构的异质结构包含在势阱中

    公开(公告)号：US07619238B2

    公开(公告)日：2009-11-17

    申请号：US11539754

    申请日：2006-10-09

    申请人： Remigijus Gaska ,  Michael Shur ,  Jianping Zhang

    发明人： Remigijus Gaska ,  Michael Shur ,  Jianping Zhang

    IPC分类号： H01L31/00

    CPC分类号： H01L33/06 ,  B82Y20/00

    摘要： A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.

    摘要翻译： 提供了一种发光异质结构和/或其中发光结构被包含在势阱内的器件。 势阱被配置为在发光结构内容纳电子，空穴和/或电子和空穴对。 可以使用声子工程方法，其中将潜在阱和/或光产生结构的带结构设计为便于通过进入发光结构的电子发射极性光学声子。 在这种程度上，在发光结构材料中，势阱的顶部的能量与光产生结构中的量子阱的能量之间的差可以与极性光学声子的能量共振。 量子阱的能量可以包括量子阱顶部的能量，电子基态能量和/或类似物质。