公开(公告)号：US20170330833A1

公开(公告)日：2017-11-16

申请号：US15667073

申请日：2017-08-02

Applicant: Renesas Electronics Corporation

Inventor： Kazuhito ICHINOSE

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535

Abstract: Pretreatment is carried out in a first chamber. Then, a mixed gas of titanium tetrachloride and hydrogen is supplied into a second chamber. At this time, conditions are set such that partial pressure of the titanium tetrachloride is higher than 3 Pa. The conditions are set such that the product of the partial pressure of the titanium tetrachloride and supply time is greater than 800 Pa·second. The titanium tetrachloride continues to be supplied into the second chamber to form a titanium film under prescribed temperature conditions in a plasma atmosphere. The temperature conditions are set such that temperature is higher than temperature at which titanium silicide is formed and lower than temperature at which a metal silicide film agglomerates. A titanium nitride film is formed in a third chamber.

公开(公告)号：US20170018502A1

公开(公告)日：2017-01-19

申请号：US15207619

申请日：2016-07-12

Applicant: Renesas Electronics Corporation

Inventor： Kazuhito ICHINOSE

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535

Abstract: Pretreatment is carried out in a first chamber. Then, a mixed gas of titanium tetrachloride and hydrogen is supplied into a second chamber. At this time, conditions are set such that partial pressure of the titanium tetrachloride is higher than 3 Pa. The conditions are set such that the product of the partial pressure of the titanium tetrachloride and supply time is greater than 800 Pa·second. The titanium tetrachloride continues to be supplied into the second chamber to form a titanium film under prescribed temperature conditions in a plasma atmosphere. The temperature conditions are set such that temperature is higher than temperature at which titanium silicide is formed and lower than temperature at which a metal silicide film agglomerates. A titanium nitride film is formed in a third chamber.

Abstract translation: 预处理在第一室中进行。 然后，将四氯化钛和氢气的混合气体供给到第二室。 此时，使四氯化钛的分压高于3Pa的条件设定为使四氯化钛的分压与供给时间的乘积大于800Pa·秒的条件。 继续将四氯化钛供给到第二室中，以在等离子体气氛中规定的温度条件下形成钛膜。 温度条件设定为使得温度高于形成硅化钛的温度，并且低于金属硅化物膜聚集的温度。 在第三室中形成氮化钛膜。

公开(公告)号：US20180261467A1

公开(公告)日：2018-09-13

申请号：US15760905

申请日：2015-10-01

Applicant: Renesas Electronics Corporation

Inventor： Masahiro MATSUMOTO ,  Kazuhito ICHINOSE ,  Akira YAJIMA

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/00

Abstract: It is possible to prevent deterioration of a redistribution layer due to exposure of the redistribution layer from an upper insulating film and the resultant reaction with moisture, ions, or the like. As means thereof, in a semiconductor device having a plurality of wiring layers formed in an element formation region and having a redistribution layer connected with a pad electrode which is an uppermost wiring layer, a dummy pattern is arranged in a region closer to a scribe region than the redistribution layer.

公开(公告)号：US20160079188A1

公开(公告)日：2016-03-17

申请号：US14952618

申请日：2015-11-25

Applicant: Renesas Electronics Corporation

Inventor： Kazuhito ICHINOSE ,  Seiji MURANAKA ,  Kazuyuki OMORI

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L21/683 ,  H01L23/495 ,  H01L21/48 ,  H01L21/78

CPC classification number: H01L23/564 ,  H01L21/4825 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6836 ,  H01L21/76835 ,  H01L21/76879 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48844 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed is a semiconductor device whose reliability can be improved. The semiconductor device includes: first wiring formed over a semiconductor substrate via a first insulating film; a second insulating film that includes an inorganic film covering the first wiring and that has a flat surface on which CMP processing has been performed; a third insulating film that is formed over the second insulating film and includes an inorganic film having moisture resistance higher than that of the second insulating film; and second wiring formed over the third insulating film. The thickness of the second wiring is 10 times or more larger than that of the first wiring, and the second wiring is located over the third insulating film without an organic insulating film being interposed between itself and the third insulating film.