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    Piezo-on-diamond resonators and resonator systems
    2.
    发明申请
    Piezo-on-diamond resonators and resonator systems 有权
    金刚石谐振器和谐振器系统

    公开(公告)号：US20080297281A1

    公开(公告)日：2008-12-04

    申请号：US11809748

    申请日：2007-06-01

    Applicant: Farrokh Ayazi ,  Reza Abdolvand

    Inventor： Farrokh Ayazi ,  Reza Abdolvand

    IPC: H03H9/60 ,  H01L41/04

    CPC classification number: H03H9/02259 ,  H03H3/0076 ,  H03H9/02228 ,  H03H9/172 ,  H03H9/2463 ,  H03H2009/02496

    Abstract: Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor.

    Abstract translation: 公开了在沉积在载体基底上的多晶金刚石膜上制造的压电转换微机械体声波谐振器。 示例性谐振器包括其上设置有平滑金刚石层的基板。 压电层设置在金刚石层上，顶部和底部电极夹着压电层。 包括金刚石层，压电层和电极的谐振结构从基板释放并且自由振动。 另外，一个或多个感测平台可以耦合到衬底以形成质量传感器。

    Capacitive microaccelerometers and fabrication methods
    3.
    发明申请
    Capacitive microaccelerometers and fabrication methods 有权
    电容式微加速度计及其制造方法

    公开(公告)号：US20060272414A1

    公开(公告)日：2006-12-07

    申请号：US11444723

    申请日：2006-06-01

    Applicant: Farrokh Ayazi ,  Babak Amini ,  Reza Abdolvand

    Inventor： Farrokh Ayazi ,  Babak Amini ,  Reza Abdolvand

    IPC: G01P15/125

    CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10T29/417 ,  Y10T29/49156

    Abstract: Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution ( 17 pF/g). The microstructures are fabricated in thick (>100 μm) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is −91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/√Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.

    Abstract translation: 公开了包括平面内电容式微加速度计的可移动微结构，具有小的重力分辨率（<200ng /√Hz）和非常高的灵敏度（> 17pF / g）。 使用提供大的地震质量（> 10毫克），减小的电容间隙的双掩模完全干燥释放工艺在厚（>100μm）绝缘体上硅（SOI）衬底或硅衬底上制造微结构， 并降低平面内刚度。 制造的器件可以连接到高分辨率开关电容器CMOS IC，从而不需要占用面积的参考电容器。 测量的灵敏度为83 mV / mg（17 pF / g），输出噪声底限为10 Hz时的-91 dBm / Hz（对应于170 ng /√Hz的加速度分辨率）。 IC消耗6 mW功率，并测量0.65 mm 2“核心区域。

    Methods of forming oxide masks with submicron openings and microstructures formed thereby
    4.
    发明申请
    Methods of forming oxide masks with submicron openings and microstructures formed thereby 有权
    用亚微米开口形成氧化物掩模的方法和由此形成的微结构

    公开(公告)号：US20050124135A1

    公开(公告)日：2005-06-09

    申请号：US10996683

    申请日：2004-11-22

    Applicant: Farrokh Ayazi ,  Reza Abdolvand ,  Siavash Anaraki

    Inventor： Farrokh Ayazi ,  Reza Abdolvand ,  Siavash Anaraki

    IPC: H01L21/00 ,  H01L21/76

    CPC classification number: B81C1/00619

    Abstract: Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.

    Abstract translation: 公开了用于批量制造包括在其上形成有亚微米开口的衬底上的氧化物掩模的微结构的处理技术，以及使用常规光学光刻的具有深亚微米，高纵横比的蚀刻沟槽的微结构。 可以生产的示例性高纵横比蚀刻沟槽微结构包括单晶谐振器和传感器。

    NANOWIRE THERMOELECTRIC INFRARED DETECTOR
    5.
    发明申请
    NANOWIRE THERMOELECTRIC INFRARED DETECTOR 审中-公开
    纳米级热电红外探测器

    公开(公告)号：US20130248712A1

    公开(公告)日：2013-09-26

    申请号：US13991799

    申请日：2011-12-13

    Applicant: Reza Abdolvand ,  Daryoosh Vashaee

    Inventor： Reza Abdolvand ,  Daryoosh Vashaee

    IPC: G01J5/12 ,  H01L31/18

    CPC classification number: G01J5/16 ,  G01J5/022 ,  G01J5/023 ,  G01J5/024 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/12 ,  G01J2005/126 ,  H01L31/18 ,  Y10T29/49002

    Abstract: A thermoelectric infrared detector. The detector includes an absorption platform comprising a material that increases in temperature in response to incident infrared radiation, the platform covering substantially an entire area of the detector. The detector includes a thermocouple substantially suspended from contact with a substrate by at least one arm connected to the substrate and a thermal connection between the absorption platform and the thermocouple.

    Abstract translation: 热电红外探测器。 检测器包括吸收平台，该吸收平台包括响应于入射的红外辐射而升高温度的材料，该平台基本上覆盖检测器的整个区域。 检测器包括基本上悬挂在与衬底接触的热电偶上，所述至少一个臂连接到衬底以及吸收平台和热电偶之间的热连接。

    Piezo-on-diamond resonators and resonator systems
    7.
    发明授权
    Piezo-on-diamond resonators and resonator systems 有权
    金刚石谐振器和谐振器系统

    公开(公告)号：US07812692B2

    公开(公告)日：2010-10-12

    申请号：US11809748

    申请日：2007-06-01

    Applicant: Farrokh Ayazi ,  Reza Abdolvand

    Inventor： Farrokh Ayazi ,  Reza Abdolvand

    IPC: H03H9/00 ,  H03H9/09 ,  H01L41/047

    CPC classification number: H03H9/02259 ,  H03H3/0076 ,  H03H9/02228 ,  H03H9/172 ,  H03H9/2463 ,  H03H2009/02496

    Abstract: Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor.

    Abstract translation: 公开了在沉积在载体基底上的多晶金刚石膜上制造的压电转换微机械体声波谐振器。 示例性谐振器包括其上设置有平滑金刚石层的基板。 压电层设置在金刚石层上，顶部和底部电极夹着压电层。 包括金刚石层，压电层和电极的谐振结构从基板释放并且自由振动。 另外，一个或多个感测平台可以耦合到衬底以形成质量传感器。

    Capacitive microaccelerometers and fabrication methods
    8.
    发明授权
    Capacitive microaccelerometers and fabrication methods 有权
    电容式微加速度计及其制造方法

    公开(公告)号：US07757393B2

    公开(公告)日：2010-07-20

    申请号：US11904804

    申请日：2007-09-28

    Applicant: Farrokh Ayazi ,  Babak Vakili Amini ,  Reza Abdolvand

    Inventor： Farrokh Ayazi ,  Babak Vakili Amini ,  Reza Abdolvand

    IPC: H05K3/02

    CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10T29/417 ,  Y10T29/49156

    Abstract: Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution ( 17 pF/g). The microstructures are fabricated in thick (>100 μm) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is −91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/√Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.

    Abstract translation: 公开了包括平面内电容式微加速度计的可移动微结构，具有小的重力分辨率（<200ng /√Hz）和非常高的灵敏度（> 17pF / g）。 使用提供大的地震质量（> 10毫克），减小的电容间隙的双掩模完全干燥释放工艺在厚（>100μm）绝缘体上硅（SOI）衬底或硅衬底上制造微结构， 并降低平面内刚度。 制造的器件可以连接到高分辨率开关电容器CMOS IC，从而不需要占用面积的参考电容器。 测量的灵敏度为83 mV / mg（17 pF / g），输出噪声底限为10 Hz时的-91 dBm / Hz（对应于170 ng /√Hz的加速度分辨率）。 IC功耗为6mW，核心面积为0.65mm2。

    Microelectromechanical resonators with passive frequency tuning using variable impedance circuits
    9.
    发明授权
    Microelectromechanical resonators with passive frequency tuning using variable impedance circuits 失效
    使用可变阻抗电路进行无源频率调谐的微机电谐振器

    公开(公告)号：US08350633B1

    公开(公告)日：2013-01-08

    申请号：US13175445

    申请日：2011-07-01

    Applicant: Reza Abdolvand ,  Mohsen Shahmohammadi Ghahsareh ,  Mohammad J. Modarres-Zadeh

    Inventor： Reza Abdolvand ,  Mohsen Shahmohammadi Ghahsareh ,  Mohammad J. Modarres-Zadeh

    IPC: H03B5/32 ,  H01L41/047

    CPC classification number: H03B5/323

    Abstract: Periodic signal generators include an oscillator circuit, which is configured to generate a first periodic signal at an output thereof, and a piezoelectric-based microelectromechanical resonator. The resonator is configured to generate a second periodic signal at a first electrode thereof, which is electrically coupled to the oscillator circuit. A variable impedance circuit is provided, which is electrically coupled to a second electrode of the piezoelectric-based microelectromechanical resonator. The variable impedance circuit is configured to passively modify a frequency of the second periodic signal by changing an induced electromechanical stiffness in at least a portion of the piezoelectric-based microelectromechanical resonator.

    Abstract translation: 周期性信号发生器包括振荡器电路，其被配置为在其输出处产生第一周期性信号，以及基于压电的微机电谐振器。 谐振器被配置为在其第一电极处产生电耦合到振荡器电路的第二周期性信号。 提供可变阻抗电路，其电耦合到基于压电的微机电谐振器的第二电极。 可变阻抗电路被配置为通过改变基于压电的微机电谐振器的至少一部分中的感应机电刚度来无源地修改第二周期信号的频率。

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