Reconfigurable memory block redundancy to repair defective input/output lines
    2.
    发明申请
    Reconfigurable memory block redundancy to repair defective input/output lines 有权
    可重新配置的内存块冗余来修复有缺陷的输入/输出线

    公开(公告)号:US20070070734A1

    公开(公告)日:2007-03-29

    申请号:US11240304

    申请日:2005-09-29

    IPC分类号: G11C29/00

    摘要: An embodiment of the present invention is a technique to provide a reconfigurable repair circuit in a memory device. A table structure contains a plurality of entries, each entry having a defective address word and a redundant address word. The redundant address word corresponds to a redundant block and is generated in response to a memory access to a defective input/output (I/O) line in a memory block of the memory device. A decoding circuit decodes the redundant address word to select a redundant I/O line in the redundant block to replace the defective I/O line.

    摘要翻译: 本发明的实施例是一种在存储器件中提供可重新配置的修复电路的技术。 表结构包含多个条目,每个条目具有缺陷地址字和冗余地址字。 冗余地址字对应于冗余块,并且响应于对存储器件的存储器块中的有缺陷的输入/输出(I / O)线的存储器访问而产生。 解码电路解码冗余地址字,以选择冗余块中的冗余I / O线来替换有缺陷的I / O线。

    Lateral phase change memory
    7.
    发明申请
    Lateral phase change memory 有权
    侧向相变记忆

    公开(公告)号:US20070096072A1

    公开(公告)日:2007-05-03

    申请号:US11399297

    申请日:2006-04-06

    摘要: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.

    摘要翻译: 横向相变存储器包括由绝缘层隔开的一对电极。 第一电极形成在绝缘层的开口中并且是杯形的。 第一电极被绝缘层覆盖,绝缘层又被第二电极覆盖。 结果,电极之间的间隔可以被非常精确地控制并且被限制在非常小的尺寸。 在形成相变材料区域之前,电极有利地由相同的材料形成。

    Method of evaluating the performance of a product using a virtual environment
    8.
    发明申请
    Method of evaluating the performance of a product using a virtual environment 失效
    使用虚拟环境评估产品性能的方法

    公开(公告)号:US20050256686A1

    公开(公告)日:2005-11-17

    申请号:US10843186

    申请日:2004-05-11

    摘要: In a method of evaluating a product worn on a body, a computer based body sub-model of at least a portion of the body is created. A computer based product sub-model of the product is created, at least one parameter of which is variable as a function of fluid loading of the product. A computer based interaction model is also created to define instructions as to how the body sub-model and the product sub-model interact and to further define instructions corresponding to a fluid loading of the product. The body sub-model, the product sub-model and the interaction model are combined in a use model to simulate interaction between the body sub-model and the product sub-model in response to fluid loading of the product. The use model is evaluated to determine the performance of at least one product feature of the product in response to fluid loading of the product.

    摘要翻译: 在评估穿在身体上的产品的方法中,产生至少一部分身体的基于计算机的身体子模型。 创建产品的基于计算机的产品子模型,其产品的至少一个参数可以随着产品的流体负载而变化。 还创建了基于计算机的交互模型来定义关于身体子模型和产品子模型如何相互作用并且进一步定义对应于产品的流体加载的指令的指令。 将身体子模型,产品子模型和相互作用模型组合在使用模型中,以模拟产品子体模型与产品子模型之间的相互作用,以响应产品的流体负载。 评估使用模型以确定产品的至少一个产品特征的响应于产品的流体负载的性能。

    LATERAL PHASE CHANGE MEMORY
    10.
    发明申请
    LATERAL PHASE CHANGE MEMORY 有权
    侧向相位变化记忆

    公开(公告)号:US20110003454A1

    公开(公告)日:2011-01-06

    申请号:US12883086

    申请日:2010-09-15

    IPC分类号: H01L21/02

    摘要: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.

    摘要翻译: 横向相变存储器包括由绝缘层隔开的一对电极。 第一电极形成在绝缘层的开口中并且是杯形的。 第一电极被绝缘层覆盖,绝缘层又被第二电极覆盖。 结果,电极之间的间隔可以被非常精确地控制并且被限制在非常小的尺寸。 在形成相变材料区域之前,电极有利地由相同的材料形成。