公开(公告)号：US06375859B1

公开(公告)日：2002-04-23

申请号：US09244935

申请日：1999-02-04

申请人： Richard P. Volant ,  Joseph T. Kocis ,  Waldemar W. Kocon ,  Seshadri Subbanna

发明人： Richard P. Volant ,  Joseph T. Kocis ,  Waldemar W. Kocon ,  Seshadri Subbanna

IPC分类号： B44C122

CPC分类号： H01L21/02071 ,  G03F7/422 ,  G03F7/427 ,  H01L21/31133 ,  H01L21/31138

摘要： A process for removing a resist material containing a chlorine residue from an organic substrate. The process first removes the chlorine residue from the resist material by exposing the resist material to an abbreviated plasma which also removes a portion of the resist material. The remainder of the resist material is removed by exposing the resist material to a solvent which does not affect the organic substrate.

摘要翻译： 从有机基板除去含有残留氯的抗蚀剂材料的方法。 该方法首先通过将抗蚀剂材料暴露于也去除抗蚀剂材料的一部分的缩写等离子体而从抗蚀剂材料中除去氯残余物。 通过将抗蚀剂材料暴露于不​​影响有机基底的溶剂，除去抗蚀剂材料的其余部分。

公开(公告)号：US06800503B2

公开(公告)日：2004-10-05

申请号：US10300520

申请日：2002-11-20

申请人： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

发明人： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

IPC分类号： H01L2100

CPC分类号： B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

摘要： A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

摘要翻译： 一种制造封装的微电子机械系统（MEMS）的方法及其制造方法，包括形成电介质层，图案化介电层的上表面以形成沟槽，在沟槽内形成释放材料，图案化上表面 形成另一个沟槽，形成第一封装层，该第一封装层包括另一个沟槽内的侧壁，在第一封装层内形成核心层，以及在芯层上方形成第二封装层，其中第二封装层被连接 到第一封装层的侧壁。 或者，该方法包括通过光掩模工艺形成多层MEMS结构以形成第一金属层，第二层包括电介质层和第二金属层以及第三金属层。 芯层和封装层由具有互补的电，机械和/或磁性的材料制成。

公开(公告)号：US06933186B2

公开(公告)日：2005-08-23

申请号：US09961009

申请日：2001-09-21

申请人： John M. Cotte ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

发明人： John M. Cotte ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

IPC分类号： H01C17/26 ,  H01L21/02 ,  H01L21/337

CPC分类号： H01L28/24 ,  H01C17/262

摘要： A method of improving the tolerance of a back-end-of-the-line (BEOL) thin film resistor is provided. Specifically, the method of the present invention includes an anodization step which is capable of converting a portion of base resistor film into an anodized region. The anodized resistor thus formed has a sheet resistivity that is higher than that of the base resistor film.

摘要翻译： 提供了一种改进后端（BEOL）薄膜电阻的公差的方法。 具体地，本发明的方法包括能够将基极电阻膜的一部分转变为阳极氧化区域的阳极氧化步骤。 如此形成的阳极氧化电阻的电阻率比基极电阻膜高。

公开(公告)号：US06414371B1

公开(公告)日：2002-07-02

申请号：US09580130

申请日：2000-05-30

申请人： Gregory G. Freeman ,  Robert A. Groves ,  Jeffrey Johnson ,  Seshadri Subbanna ,  Richard P. Volant

发明人： Gregory G. Freeman ,  Robert A. Groves ,  Jeffrey Johnson ,  Seshadri Subbanna ,  Richard P. Volant

IPC分类号： H01L27082

CPC分类号： H01L29/66242 ,  H01L21/8222 ,  H01L27/0823

摘要： High frequency performance of transistor designs is enhanced and manufacturing yield improved by removing and reducing sources of parasitic capacitance through combinations of processes from different technologies. After formation of collector, base and emitter regions on a substrate and attachment of a second substrate, the original substrate is wholly or partially removed, the inactive collector area is removed or rendered semi-insulating and wiring and contacts are made from the original back side of the chip. Dielectric material used in the manufacturing process can be removed to further reduce capacitance. The high frequency transistors can be bonded to CMOS chips or wafers to form BICMOS chips.

摘要翻译： 提高了晶体管设计的高频性能，并通过不同技术的工艺组合来去除和减少寄生电容源，从而提高了制造成品率。 在衬底上形成集电极，基极和发射极区域并附接第二衬底后，原始衬底被全部或部分去除，非活性集电极区域被去除或呈半绝缘，并且布线和接触由原始背面制成 的芯片。 可以去除在制造过程中使用的介电材料，以进一步降低电容。 高频晶体管可以结合到CMOS芯片或晶圆上以形成BICMOS芯片。

公开(公告)号：US06798029B2

公开(公告)日：2004-09-28

申请号：US10434999

申请日：2003-05-09

申请人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

发明人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

IPC分类号： H01L2982

CPC分类号： H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

摘要翻译： 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

公开(公告)号：US07053460B2

公开(公告)日：2006-05-30

申请号：US10026146

申请日：2001-12-21

申请人： Richard P. Volant ,  Seshadri Subbanna ,  Robert A. Groves ,  John C. Malinowski ,  Kenneth J. Stein ,  Kevin S. Petrarca

发明人： Richard P. Volant ,  Seshadri Subbanna ,  Robert A. Groves ,  John C. Malinowski ,  Kenneth J. Stein ,  Kevin S. Petrarca

IPC分类号： H01L29/00 ,  H01L23/48

CPC分类号： H01L23/66 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： A passive electrical device includes a first electrical conductor, a second electrical conductor disposed over the first conductor; and a third electrical conductor connecting the first conductor to the second conductor. The said first, second and third conductors are disposed on a semiconductor substrate. The sheet resistivity of the first conductor is approximately equal to the sheet resistivity of the second conductor.

公开(公告)号：US06661069B1

公开(公告)日：2003-12-09

申请号：US10278211

申请日：2002-10-22

申请人： Anil K. Chinthakindi ,  Robert A. Groves ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

发明人： Anil K. Chinthakindi ,  Robert A. Groves ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

IPC分类号： H01L2986

CPC分类号： H01G5/18 ,  B81B2201/01 ,  H01G5/011 ,  Y10S257/924

摘要： A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the “chip side” while the fixed bottom electrode is fabricated on a separated substrate “carrier side”. Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and “flipped over”, aligned and joined to the “carrier” substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.

摘要翻译： 描述了三维微机电（MEM）变容二极管，其中可移动光束和固定电极分别制造在彼此耦合的分开的基板上。 具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。 在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。 梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。 由于所涉及的驱动力恒定，可以获得大的电容调谐范围。 该装置的三维方面具有较大的表面积。 当提供大的纵横比特征时，可以使用较低的致动电压。 在制造时，MEMS器件被完全封装，不需要额外的器件封装。 此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。

公开(公告)号：US06635506B2

公开(公告)日：2003-10-21

申请号：US10014660

申请日：2001-11-07

申请人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

发明人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

IPC分类号： H01L2100

CPC分类号： B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

摘要翻译： 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

公开(公告)号：US06368484B1

公开(公告)日：2002-04-09

申请号：US09567468

申请日：2000-05-09

申请人： Richard P. Volant ,  Peter S. Locke ,  Kevin S. Petrarca ,  David M. Rockwell ,  Seshadri Subbanna

发明人： Richard P. Volant ,  Peter S. Locke ,  Kevin S. Petrarca ,  David M. Rockwell ,  Seshadri Subbanna

IPC分类号： C25D548

CPC分类号： H01L21/76865 ,  C25D5/02 ,  C25D5/48 ,  H01L21/76843 ,  H01L21/76874 ,  H01L21/76879

摘要： A method is described for electroplating a metal structure in a feature formed in a substrate. A seed layer of the metal is deposited on the top surface and on the bottom and sidewalls of the feature. The seed layer is then selectively removed from the top surface, so that only a portion of the seed layer remains in the feature on at least the bottom thereof. The metal is then electroplated using this portion of the seed layer, so that the metal fills the feature. The removal of the seed layer from the top surface causes no electroplating to occur on the top surface.

摘要翻译： 描述了一种用于在形成在基底中的特征中电镀金属结构的方法。 金属的种子层沉积在特征的顶表面和底部以及侧壁上。 然后，从顶表面选择性地去除晶种层，使得至少其底部仅有部分种子层保留在特征中。 然后使用种子层的这一部分电镀金属，使得金属填充该特征。 从上表面去除种子层不会在顶表面上发生电镀。

公开(公告)号：US06696343B1

公开(公告)日：2004-02-24

申请号：US10459978

申请日：2003-06-12

申请人： Anil K. Chinthakindi ,  Robert A. Groves ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

发明人： Anil K. Chinthakindi ,  Robert A. Groves ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

IPC分类号： H01L2120

CPC分类号： H01G5/18 ,  B81B2201/01 ,  H01G5/011 ,  Y10S257/924

摘要： A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the “chip side” while the fixed bottom electrode is fabricated on a separated substrate “carrier side”. Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and “flipped over”, aligned and joined to the “carrier” substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.

摘要翻译： 描述了三维微机电（MEM）变容二极管，其中可移动光束和固定电极分别制造在彼此耦合的分开的基板上。 具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。 在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。 梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。 由于所涉及的驱动力恒定，可以获得大的电容调谐范围。 该装置的三维方面具有较大的表面积。 当提供大的纵横比特征时，可以使用较低的致动电压。 在制造时，MEMS器件被完全封装，不需要额外的器件封装。 此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。