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公开(公告)号：US06368484B1
公开(公告)日：2002-04-09
申请号：US09567468
申请日：2000-05-09
IPC分类号： C25D548
CPC分类号： H01L21/76865 , C25D5/02 , C25D5/48 , H01L21/76843 , H01L21/76874 , H01L21/76879
摘要： A method is described for electroplating a metal structure in a feature formed in a substrate. A seed layer of the metal is deposited on the top surface and on the bottom and sidewalls of the feature. The seed layer is then selectively removed from the top surface, so that only a portion of the seed layer remains in the feature on at least the bottom thereof. The metal is then electroplated using this portion of the seed layer, so that the metal fills the feature. The removal of the seed layer from the top surface causes no electroplating to occur on the top surface.
摘要翻译： 描述了一种用于在形成在基底中的特征中电镀金属结构的方法。 金属的种子层沉积在特征的顶表面和底部以及侧壁上。 然后，从顶表面选择性地去除晶种层，使得至少其底部仅有部分种子层保留在特征中。 然后使用种子层的这一部分电镀金属，使得金属填充该特征。 从上表面去除种子层不会在顶表面上发生电镀。
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公开(公告)号：US06344125B1
公开(公告)日：2002-02-05
申请号：US09544053
申请日：2000-04-06
IPC分类号： C25D502
CPC分类号： C25D7/123 , H01L21/2885 , H01L21/32051
摘要： A process for the electrolytic deposition of a metal, preferably copper or an alloy of copper, directly onto a barrier layer coated on a dielectric layer. The process is advantageous because it electrolytically deposits metal in a pattern that is either the duplicate of a first conductive pattern under the dielectric or the inverse image of the first conductive pattern, depending on the first conductive pattern shape. Thus, metal is deposited on the barrier layer duplicating a first conductive pattern under the dielectric layer when the first pattern is a serpentine pattern and the metal deposits in the spaces between the conductive lines of a first conductive pattern of a discrete passive element such as a spiral.
摘要翻译： 一种用于将金属，优选铜或铜合金电解沉积到涂覆在电介质层上的阻挡层上的方法。 该方法是有利的，因为它取决于第一导电图案形状，电解沉积在第一导电图案的电介质下的第一导电图案的副本或第一导电图案的逆图像的图案中的金属。 因此，当第一图案是蛇形图案时，金属沉积在阻挡层上，复制第一导电图案下方的第一导电图案，并且金属沉积在离散无源元件的第一导电图案的导线之间的空间中，例如 螺旋。
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公开(公告)号：US06979393B2
公开(公告)日：2005-12-27
申请号：US10055134
申请日：2002-01-22
申请人： Kenneth P. Rodbell , Panayotis C. Andricacos , Cyril Cabral, Jr. , Lynne M. Gignac , Cyprian E. Uzoh , Peter S. Locke
发明人： Kenneth P. Rodbell , Panayotis C. Andricacos , Cyril Cabral, Jr. , Lynne M. Gignac , Cyprian E. Uzoh , Peter S. Locke
摘要： A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as 1/10. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.
摘要翻译： 公开了一种在电子基板上镀铜导体的方法和形成的器件。 在该方法中，首先提供填充有保持在约0℃至约18℃之间的温度的电镀溶液的电镀铜浴。 然后将浸在电镀溶液中的电子基板上的铜层以单步骤或双步沉积工艺进行镀覆。 双步沉积方法更适合于在具有大纵横比的特征中沉积铜导体，例如具有大于1/3或高达1的直径/深度的纵横比的双镶嵌结构中的通孔 / 10。 各种电镀参数用于在单步沉积或双步沉积过程中提供短电阻瞬变。 这些参数包括浴温度，浴液搅拌，镀浴中的添加剂浓度，所用的电镀电流密度，铜膜的沉积速率和沉积的铜膜的总厚度。
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4.发明授权公开(公告)号：US06471845B1
公开(公告)日：2002-10-29
申请号：US09461849
申请日：1999-12-15
申请人： John O. Dukovic , William E. Corbin, Jr. , Erick G. Walton , Peter S. Locke , Panayotis C. Andricacos , James E. Fluegel , Evan Patton , Jonathan Reid
发明人： John O. Dukovic , William E. Corbin, Jr. , Erick G. Walton , Peter S. Locke , Panayotis C. Andricacos , James E. Fluegel , Evan Patton , Jonathan Reid
IPC分类号： C25D2112
CPC分类号： C25D21/12 , Y10T137/2509
摘要： A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.
摘要翻译： 用于控制化学浴的组成的方法，其中使用预测剂量来解释浴的组成的变化，其中过程的操作特性被划分为多种操作模式以及相关材料的消耗或产生 根据经验确定该过程，并酌情添加材料。
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公开(公告)号：US06344129B1
公开(公告)日：2002-02-05
申请号：US09418197
申请日：1999-10-13
申请人： Kenneth P. Rodbell , Panayotis C. Andricacos , Cyril Cabral, Jr. , Lynne M. Gignac , Cyprian E. Uzoh , Peter S. Locke
发明人： Kenneth P. Rodbell , Panayotis C. Andricacos , Cyril Cabral, Jr. , Lynne M. Gignac , Cyprian E. Uzoh , Peter S. Locke
IPC分类号： C25D500
摘要： A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.
摘要翻译： 公开了一种在电子基板上镀铜导体的方法和形成的器件。 在该方法中，首先提供填充有保持在约0℃至约18℃之间的温度的电镀溶液的电镀铜浴。 然后将浸在电镀溶液中的电子基板上的铜层以单步骤或双步沉积工艺进行镀覆。 双步沉积方法更适合于在具有大纵横比的特征中沉积铜导体，例如双镶嵌结构中的通孔，其直径/深度的纵横比大于1/3或高达{分数（ 1/10）}。 各种电镀参数用于在单步沉积或双步沉积工艺中提供短电阻瞬变。 这些参数包括浴温度，浴液搅拌，镀浴中的添加剂浓度，所用的电镀电流密度，铜膜的沉积速率和沉积的铜膜的总厚度。
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6.发明授权Method for controlling the texture and microstructure of plated copper and plated structure 失效控制电镀铜和电镀结构的织构和组织的方法公开(公告)号：US06333120B1
公开(公告)日：2001-12-25
申请号：US09427703
申请日：1999-10-27
IPC分类号： B32B1500
CPC分类号： C25D5/48 , C25D5/10 , H01L21/2885 , H01L21/76838 , H01L21/76877 , H05K3/385 , Y10T428/12493 , Y10T428/12528
摘要： Copper is plated onto a substrate by plating a layer of copper onto the substrate to provide a maximum thickness of about 350 nanometers, followed by subjecting the copper coated substrate to an oxygen containing gaseous ambient in order to roughen the copper surface. Next, a second layer of copper is electroplated onto the structure to provide the desired thickness. The texture of the second layer of copper is independent of the underlayer of copper and has a random or at least substantially random texture.
摘要翻译： 通过将铜层镀在基底上以提供约350纳米的最大厚度，然后将铜涂覆的基底经受含氧气体环境以使粗糙的铜表面，将铜镀在基底上。 接下来，将第二层铜电镀到结构上以提供所需的厚度。 铜的第二层的纹理与铜的底层无关，并且具有随机或至少基本上随机的纹理。
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7.发明授权公开(公告)号：US07678258B2
公开(公告)日：2010-03-16
申请号：US10615794
申请日：2003-07-10
申请人： Panayotis Andricacos , Dean S. Chung , Hariklia Deligianni , James E. Fluegel , Keith T. Kwietniak , Peter S. Locke , Darryl D. Restaino , Soon-Cheon Seo , Philippe M. Vereecken , Erick G. Walton
发明人： Panayotis Andricacos , Dean S. Chung , Hariklia Deligianni , James E. Fluegel , Keith T. Kwietniak , Peter S. Locke , Darryl D. Restaino , Soon-Cheon Seo , Philippe M. Vereecken , Erick G. Walton
IPC分类号： C25D5/00
CPC分类号： C23C18/1617 , C23C18/1683 , C25D21/12 , C25D21/18
摘要： An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.
摘要翻译： 公开了一种稳定湿化学浴的改进方法。 通常，这种浴用于处理工件的工艺中，例如用于将金属电镀到基底上的电镀工艺。 特别地，本发明涉及镀铜浴。 更具体地说，本发明涉及镀铜浴的稳定性。 更具体地，本发明涉及通过监测铜电镀浴中有害副产物的积累来防止空隙形成。
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公开(公告)号：US06600230B2
公开(公告)日：2003-07-29
申请号：US09899923
申请日：2001-07-09
申请人： Cyprian E. Uzoh , Peter S. Locke
发明人： Cyprian E. Uzoh , Peter S. Locke
IPC分类号： H01L2348
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877 , Y10T428/12 , Y10T428/12528 , Y10T428/239 , Y10T428/24917
摘要： A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.
摘要翻译： 在亚微米结构中电镀金属的方法。 种子层沉积在亚微米结构的表面上。 种子层在约80℃至约130℃的温度下退火。将金属镀在种子层上。
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公开(公告)号：US06592747B2
公开(公告)日：2003-07-15
申请号：US09881817
申请日：2001-06-18
IPC分类号： G01N2742
CPC分类号： G01N31/164 , G01N27/42
摘要： Organic addition agents in copper plating baths are monitored by diluting a sample of the bath with sulfuric acid and hydrochloric acid and optionally a cupric salt. The diluting provides a bath having conventional concentrations of cupric ion, sulfuric acid and hydrochloric acid; and adjusted concentrations of the organic addition agents of 1/X of their original values in the sample; where X is the dilution factor. CVS techniques are used to determine concentrations of organic addition agents.
摘要翻译： 通过用硫酸和盐酸和任选的铜盐稀释浴的样品来监测铜电镀浴中的有机添加剂。 稀释液提供具有常规浓度的铜离子，硫酸和盐酸的浴液; 并将样品中原始值的1 / X的有机添加剂的浓度调节到其中; 其中X是稀释因子。 CVS技术用于确定有机添加剂的浓度。
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公开(公告)号：US06270646B1
公开(公告)日：2001-08-07
申请号：US09473909
申请日：1999-12-28
申请人： Erick Gregory Walton , Dean S. Chung , Lara Sandra Collins , William E. Corbin, Jr. , Hariklia Deligianni , Daniel Charles Edelstein , James E. Fluegel , Josef Warren Korejwa , Peter S. Locke , Cyprian Emeka Uzoh
发明人： Erick Gregory Walton , Dean S. Chung , Lara Sandra Collins , William E. Corbin, Jr. , Hariklia Deligianni , Daniel Charles Edelstein , James E. Fluegel , Josef Warren Korejwa , Peter S. Locke , Cyprian Emeka Uzoh
IPC分类号： C25D522
摘要： A metal plating apparatus is described which includes a compressible member having a conductive surface covering substantially all of the surface of the substrate to be plated. The plating current is thereby transmitted over a wide area of the substrate, rather than a few localized contact points. The compressible member is porous so as to absorb the plating solution and transmit the plating solution to the substrate. The wafer and compressible member may rotate with respect to each other. The compressible member may be at cathode potential or may be a passive circuit element.
摘要翻译： 描述了一种金属电镀装置，其包括具有覆盖待镀基板的基本上所有表面的导电表面的可压缩构件。 因此，电镀电流在衬底的广泛区域上传输，而不是几个局部接触点。 可压缩构件是多孔的，以便吸收电镀液并将电镀液传输到基底。 晶片和可压缩构件可以相对于彼此旋转。 可压缩构件可以处于阴极电位，或者可以是无源电路元件。
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