公开(公告)号：US06800503B2

公开(公告)日：2004-10-05

申请号：US10300520

申请日：2002-11-20

申请人： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

发明人： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

IPC分类号： H01L2100

CPC分类号： B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

摘要： A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

摘要翻译： 一种制造封装的微电子机械系统（MEMS）的方法及其制造方法，包括形成电介质层，图案化介电层的上表面以形成沟槽，在沟槽内形成释放材料，图案化上表面 形成另一个沟槽，形成第一封装层，该第一封装层包括另一个沟槽内的侧壁，在第一封装层内形成核心层，以及在芯层上方形成第二封装层，其中第二封装层被连接 到第一封装层的侧壁。 或者，该方法包括通过光掩模工艺形成多层MEMS结构以形成第一金属层，第二层包括电介质层和第二金属层以及第三金属层。 芯层和封装层由具有互补的电，机械和/或磁性的材料制成。

公开(公告)号：US20060164194A1

公开(公告)日：2006-07-27

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20050007217A1

公开(公告)日：2005-01-13

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H59/00 ,  H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400°C）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20050121803A1

公开(公告)日：2005-06-09

申请号：US11030496

申请日：2005-01-06

申请人： David Angell ,  Frederic Beaulieu ,  Takashi Hisada ,  Adreanne Kelly ,  Samuel McKnight ,  Hiromitsu Miyai ,  Kevin Petrarca ,  Wolfgang Sauter ,  Richard Volant ,  Caitlin Weinstein

发明人： David Angell ,  Frederic Beaulieu ,  Takashi Hisada ,  Adreanne Kelly ,  Samuel McKnight ,  Hiromitsu Miyai ,  Kevin Petrarca ,  Wolfgang Sauter ,  Richard Volant ,  Caitlin Weinstein

IPC分类号： H01L23/485 ,  H01L21/44 ,  H01L23/48 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L2224/05073 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/04941 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

摘要翻译： 公开了一种具有非平面电介质结构和在非平面电介质结构上共形形成的金属接合层的增强接合焊盘结构。 非平面电介质结构基本上在金属接合层中再现，从而形成非平面金属结构。 围绕非平面金属结构的每一个是介电材料环，其在接合焊盘探测期间提供硬停止，以限制在探测期间可以去除的接合焊盘的量。

公开(公告)号：US07485964B2

公开(公告)日：2009-02-03

申请号：US11399579

申请日：2006-04-06

申请人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

发明人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249978 ,  Y10T428/24999 ,  H01L2924/00

摘要： A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

摘要翻译： 在将二氧化碳保持在液态或超临界状态的热力学条件下，通过使低介电常数聚合物与液体或超临界二氧化碳接触而形成的电介质材料，其中形成多孔产品。 因此，热力学条件改变为环境，其中二氧化碳从孔中逸出并被空气替代。

公开(公告)号：US20060124927A1

公开(公告)日：2006-06-15

申请号：US10905013

申请日：2004-12-09

申请人： Robert Groves ,  Peter Gruber ,  Kevin Petrarca ,  Richard Volant ,  George Walker

发明人： Robert Groves ,  Peter Gruber ,  Kevin Petrarca ,  Richard Volant ,  George Walker

IPC分类号： H01L21/66 ,  H01L23/58

CPC分类号： H05K3/3468 ,  G01R1/07314 ,  G01R3/00 ,  H01L21/4853 ,  H01L21/6835 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/19042 ,  H05K3/325 ,  H05K2201/09745 ,  H05K2201/10734 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/128 ,  H05K2203/162 ,  H05K2203/167 ,  H01L2224/0401

摘要： Methods of forming a conductive structure on a substrate prior to packaging, and a test probe structure generated according to the method, are disclosed. The conductive structure includes a high aspect ratio structure formed by injected molded solder. The invention can be applied to form passive elements and interconnects on a conventional semiconductor substrate after the typical BEOL, and prior to packaging. The method may provide better electromigration characteristics, lower resistivity, and higher Q factors for conductive structures. In addition, the method is backwardly compatible and customizable.

摘要翻译： 公开了在封装之前在基板上形成导电结构的方法和根据该方法生成的测试探针结构。 导电结构包括通过注射成型的焊料形成的高纵横比结构。 本发明可以应用于在典型的BEOL之后以及在封装之前在常规半导体衬底上形成无源元件和互连。 该方法可以为导电结构提供更好的电迁移特性，较低的电阻率和更高的Q因子。 此外，该方法可以向后兼容并可定制。

公开(公告)号：US20070152332A1

公开(公告)日：2007-07-05

申请号：US11306596

申请日：2006-01-04

申请人： Anil Chinthakindi ,  Douglas Coolbaugh ,  Ebenezer Eshun ,  Vincent McGahay ,  Anthony Stamper ,  Kunal Vaed ,  Richard Volant

发明人： Anil Chinthakindi ,  Douglas Coolbaugh ,  Ebenezer Eshun ,  Vincent McGahay ,  Anthony Stamper ,  Kunal Vaed ,  Richard Volant

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  H01L23/5223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to integrated circuits that comprise via-level wirings and/or devices. Specifically, an integrate circuit of the present invention comprises a first line level and a second line level spaced apart from each other, with a via level therebetween. The first and second line levels both comprise metal wirings and/or electronic devices. The via level comprises at least one metal via that extends therethrough to electrically connect the first line level with the second line level. Further, the via level comprises at least one via-level metal wiring and/or electronic device.

摘要翻译： 本发明涉及包括通孔级布线和/或器件的集成电路。 具体而言，本发明的集成电路包括彼此间隔开的第一线路电平和第二线路电平，其间具有通路电平。 第一和第二线路级均包括金属布线和/或电子设备。 通孔级包括至少一个穿过其中的金属通孔，以将第一线路电平与第二线路电平电连接。 此外，通孔电平包括至少一个通孔级金属布线和/或电子器件。

公开(公告)号：US20070090902A1

公开(公告)日：2007-04-26

申请号：US11163485

申请日：2005-10-20

申请人： Hariklia Deligianni ,  Robert Edwards ,  Thomas Fleischman ,  Robert Groves ,  Charles Montrose ,  Richard Volant ,  Ping-Chuan Wang

发明人： Hariklia Deligianni ,  Robert Edwards ,  Thomas Fleischman ,  Robert Groves ,  Charles Montrose ,  Richard Volant ,  Ping-Chuan Wang

IPC分类号： H01H51/22

CPC分类号： H01H59/0009

摘要： The present invention provides multiple test structures for performing reliability and qualification tests on MEMS switch devices. A Test structure for contact and gap characteristic measurements is employed having a serpentine layout simulates rows of upper and lower actuation electrodes. A cascaded switch chain test is used to monitor process defects with large sample sizes. A ring oscillator is used to measure switch speed and switch lifetime. A resistor ladder test structure is configured having each resistor in series with a switch to be tested, and having each switch-resistor pair electrically connected in parallel. Serial/parallel test structures are proposed with MEMS switches working in tandem with switches of established technology. A shift register is used to monitor the open and close state of the MEMS switches. Pull-in voltage, drop-out voltage, activation leakage current, and switch lifetime measurements are performed using the shift register.

摘要翻译： 本发明提供用于在MEMS开关装置上执行可靠性和鉴定测试的多个测试结构。 采用具有蛇形布局的接触和间隙特性测量的测试结构来模拟上下驱动电极的行。 级联交换链测试用于监控大样本量的过程缺陷。 环形振荡器用于测量开关速度和开关寿命。 电阻梯形测试结构被配置为具有与要测试的开关串联的每个电阻器，并且每个开关电阻器对并联电连接。 提出了串联/并联测试结构，其中MEMS开关与成熟技术的开关串联工作。 移位寄存器用于监测MEMS开关的开启和关闭状态。 使用移位寄存器执行拉入电压，掉电电压，启动漏电流和开关寿命测量。

公开(公告)号：US20070059951A1

公开(公告)日：2007-03-15

申请号：US10573561

申请日：2003-09-30

申请人： Richard Volant ,  Kevin Petrarca ,  George Walker

发明人： Richard Volant ,  Kevin Petrarca ,  George Walker

IPC分类号： H05K1/00

CPC分类号： H01L25/0657 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/5387 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05554 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/9222 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06579 ,  H01L2225/06589 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00

摘要： A three-dimensional package consisting of a plurality of folded integrated circuit chips (100, 110, 120) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip (130) is provided with additional interconnect wiring to a substrate (500), package or printed circuit board. Further described, is a method of providing a flexible arrangement of interconnected chips that are folded over into a three-dimensional arrangements to consume less aerial space when mounted on a substrate, second-level package or printed circuit board.

摘要翻译： 描述了由多个折叠集成电路芯片（100,110,120）组成的三维封装，其中至少一个芯片提供用于与堆叠的附加芯片的电连接的互连路径，并且至少一个芯片（130）是 提供与衬底（500），封装或印刷电路板的附加互连布线。 进一步描述的是提供互连芯片的柔性布置的方法，其被折叠成三维布置以在安装在基板，二级封装或印刷电路板上时消耗较少的空中空间。

公开(公告)号：US07056837B2

公开(公告)日：2006-06-06

申请号：US10456299

申请日：2003-06-06

申请人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

发明人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249978 ,  Y10T428/24999 ,  H01L2924/00

摘要： A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

摘要翻译： 在将二氧化碳保持在液态或超临界状态的热力学条件下，通过使低介电常数聚合物与液体或超临界二氧化碳接触而形成的电介质材料，其中形成多孔产品。 因此，热力学条件改变为环境，其中二氧化碳从孔中逸出并被空气替代。